Complementary D Flip-Flops Based on Inkjet Printed Single-Walled Carbon Nanotubes and Zinc Tin Oxide

We report clocked sequential complementary circuits that operate at 5 V in which the active semiconductors are deposited by inkjet printing. The p-channel thin-film transistors (TFTs) employ a network of predominantly semiconducting (>98%) single-walled carbon nanotubes and the n-channel TFTs emp...

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Veröffentlicht in:IEEE electron device letters 2014-12, Vol.35 (12), p.1245-1247
Hauptverfasser: Bongjun Kim, Geier, Michael L., Hersam, Mark C., Dodabalapur, Ananth
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container_issue 12
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container_title IEEE electron device letters
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creator Bongjun Kim
Geier, Michael L.
Hersam, Mark C.
Dodabalapur, Ananth
description We report clocked sequential complementary circuits that operate at 5 V in which the active semiconductors are deposited by inkjet printing. The p-channel thin-film transistors (TFTs) employ a network of predominantly semiconducting (>98%) single-walled carbon nanotubes and the n-channel TFTs employ amorphous zinc tin oxide formed from a printed precursor solution. The gate insulator material in both cases is zirconium oxide, deposited from solution. Edge triggered D flip-flops operate at clock speeds of 2.5 kHz. Our results suggest that this materials combination is promising for use in printed electronics.
doi_str_mv 10.1109/LED.2014.2364514
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subjects Carbon nanotubes
Flip-flops
Printed circuits
printed complementary circuits
printed electronics
single-walled carbon nanotube
Thin film transistors
thin-film circuits
thin-film memory
Zinc compounds
zinc tin oxide
title Complementary D Flip-Flops Based on Inkjet Printed Single-Walled Carbon Nanotubes and Zinc Tin Oxide
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