Mitigation of Reverse Short-Channel Effect With Multilayer TiN/Ti/TiN Metal Gates in Gate Last PMOSFETs

This letter investigates the mitigation of reverse short-channel effect (RSCE) using multilayer atomic layer deposition (ALD) TiN/PVD Ti/CVD TiN metal gates (MG) for the p-channel metal-oxide-semiconductor field-effect transistors fabricated the by gate-last process. It is found that work function (...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2014-08, Vol.35 (8), p.811-813
Hauptverfasser:	Lichuan Zhao, Zhaoyun Tang, Bo Tang, Xueli Ma, Jinbiao Liu, Jinjuan Xiang, Jianfeng Gao, Chunlong Li, Xiaobin He, Cheng Jia, Mingzheng Ding, Hong Yang, Yefeng Xu, Jing Xu, Hongli Wang, Peng Liu, Peizhen Hong, Lingkuan Meng, Tingting Li, Wenjuan Xiong, Hao Wu, Junjie Li, Guilei Wang, Tao Yang, Hushan Cui, Yihong Lu, Xiaodong Tong, Jun Luo, Jian Zhong, Qiang Xu, Wenwu Wang, Junfeng Li, Huilong Zhu, Chao Zhao, Jiang Yan, Dapeng Chen, Yang, Simon, Tianchun Ye
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance-voltage characteristics Cross-disciplinary physics: materials science rheology Deposition by sputtering Dielectric, amorphous and glass solid devices Electronics Exact sciences and technology flat-band voltage (Vfb) Logic gates Materials science metal gate (MG) Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) MOSFET Nanotechnology Nonhomogeneous media Physics Reverse short channel effect (RSCE) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Tin Titanium Transistors work function (WF)
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!