Achieving High Field-Effect Mobility Exceeding 50 cm \(^}\) /Vs in In-Zn-Sn-O Thin-Film Transistors
Bottom gate and etch stopper-type thin-film transistors (TFTs) with a channel layer of indium-zinc-tin oxide were fabricated. The resulting TFTs exhibited a high mobility exceeding 52 cm 2 /Vs, a low subthreshold gate swing of 0.2 V/decade, a threshold voltage of 0.1 V, and an I ON/OFF ratio of >...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2014-08, Vol.35 (8), p.853-855 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 855 |
|---|---|
| container_issue | 8 |
| container_start_page | 853 |
| container_title | IEEE electron device letters |
| container_volume | 35 |
| creator | Song, Ji Hun Kim, Kwang Suk Mo, Yeon Gon Choi, Rino Jeong, Jae Kyeong |
| description | Bottom gate and etch stopper-type thin-film transistors (TFTs) with a channel layer of indium-zinc-tin oxide were fabricated. The resulting TFTs exhibited a high mobility exceeding 52 cm 2 /Vs, a low subthreshold gate swing of 0.2 V/decade, a threshold voltage of 0.1 V, and an I ON/OFF ratio of >2 × 10 8 . The stability of the oxide passivated device under the positive and negative bias stress conditions was superior to that of the nitride passivated device, which can be attributed to the lower trap density in the channel layer. |
| doi_str_mv | 10.1109/LED.2014.2329892 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LED_2014_2329892</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6840993</ieee_id><sourcerecordid>3388003161</sourcerecordid><originalsourceid>FETCH-LOGICAL-c221t-c86fd4c725dbc6bcbd4e2baf722e38c416e00f49d7a1b5e918adb305b5b51933</originalsourceid><addsrcrecordid>eNo9kM9LwzAYhoMoOKd3wUvAix6y5WfbHMfs3GCyg8WDDEObpltGl86kE3fwf7djIt_huzzv-8IDwC3BA0KwHM7TpwHFhA8oozKR9Az0iBAJwiJi56CHY04QIzi6BFchbHBH8pj3gB7ptTVf1q3g1K7WcGJNXaK0qoxu4UtT2Nq2B5h-a2PKIyQw1Fu4fPj4WT7C4VuA1sGZQ-8OvTq0gNnaOjSx9RZmPnfBhrbx4RpcVHkdzM3f74NskmbjKZovnmfj0RxpSkmLdBJVJdcxFWWho0IXJTe0yKuYUsMSzUlkMK64LOOcFMJIkuRlwbAouiOSsT64P9XufPO5N6FVm2bvXbeoiOBScCYk7Sh8orRvQvCmUjtvt7k_KILV0aTqTKqjSfVnsovcnSLWGPOPRwnHspv9BXiWbR4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1549543592</pqid></control><display><type>article</type><title>Achieving High Field-Effect Mobility Exceeding 50 cm \(^}\) /Vs in In-Zn-Sn-O Thin-Film Transistors</title><source>IEEE Electronic Library (IEL)</source><creator>Song, Ji Hun ; Kim, Kwang Suk ; Mo, Yeon Gon ; Choi, Rino ; Jeong, Jae Kyeong</creator><creatorcontrib>Song, Ji Hun ; Kim, Kwang Suk ; Mo, Yeon Gon ; Choi, Rino ; Jeong, Jae Kyeong</creatorcontrib><description>Bottom gate and etch stopper-type thin-film transistors (TFTs) with a channel layer of indium-zinc-tin oxide were fabricated. The resulting TFTs exhibited a high mobility exceeding 52 cm 2 /Vs, a low subthreshold gate swing of 0.2 V/decade, a threshold voltage of 0.1 V, and an I ON/OFF ratio of >2 × 10 8 . The stability of the oxide passivated device under the positive and negative bias stress conditions was superior to that of the nitride passivated device, which can be attributed to the lower trap density in the channel layer.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2014.2329892</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>high mobility ; Hydrogen ; Indium zinc tin oxide semiconductor ; Logic gates ; NIST ; nitride film ; Passivation ; Thin film transistors ; Tin</subject><ispartof>IEEE electron device letters, 2014-08, Vol.35 (8), p.853-855</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Aug 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c221t-c86fd4c725dbc6bcbd4e2baf722e38c416e00f49d7a1b5e918adb305b5b51933</citedby><cites>FETCH-LOGICAL-c221t-c86fd4c725dbc6bcbd4e2baf722e38c416e00f49d7a1b5e918adb305b5b51933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6840993$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6840993$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Song, Ji Hun</creatorcontrib><creatorcontrib>Kim, Kwang Suk</creatorcontrib><creatorcontrib>Mo, Yeon Gon</creatorcontrib><creatorcontrib>Choi, Rino</creatorcontrib><creatorcontrib>Jeong, Jae Kyeong</creatorcontrib><title>Achieving High Field-Effect Mobility Exceeding 50 cm \(^}\) /Vs in In-Zn-Sn-O Thin-Film Transistors</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Bottom gate and etch stopper-type thin-film transistors (TFTs) with a channel layer of indium-zinc-tin oxide were fabricated. The resulting TFTs exhibited a high mobility exceeding 52 cm 2 /Vs, a low subthreshold gate swing of 0.2 V/decade, a threshold voltage of 0.1 V, and an I ON/OFF ratio of >2 × 10 8 . The stability of the oxide passivated device under the positive and negative bias stress conditions was superior to that of the nitride passivated device, which can be attributed to the lower trap density in the channel layer.</description><subject>high mobility</subject><subject>Hydrogen</subject><subject>Indium zinc tin oxide semiconductor</subject><subject>Logic gates</subject><subject>NIST</subject><subject>nitride film</subject><subject>Passivation</subject><subject>Thin film transistors</subject><subject>Tin</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM9LwzAYhoMoOKd3wUvAix6y5WfbHMfs3GCyg8WDDEObpltGl86kE3fwf7djIt_huzzv-8IDwC3BA0KwHM7TpwHFhA8oozKR9Az0iBAJwiJi56CHY04QIzi6BFchbHBH8pj3gB7ptTVf1q3g1K7WcGJNXaK0qoxu4UtT2Nq2B5h-a2PKIyQw1Fu4fPj4WT7C4VuA1sGZQ-8OvTq0gNnaOjSx9RZmPnfBhrbx4RpcVHkdzM3f74NskmbjKZovnmfj0RxpSkmLdBJVJdcxFWWho0IXJTe0yKuYUsMSzUlkMK64LOOcFMJIkuRlwbAouiOSsT64P9XufPO5N6FVm2bvXbeoiOBScCYk7Sh8orRvQvCmUjtvt7k_KILV0aTqTKqjSfVnsovcnSLWGPOPRwnHspv9BXiWbR4</recordid><startdate>201408</startdate><enddate>201408</enddate><creator>Song, Ji Hun</creator><creator>Kim, Kwang Suk</creator><creator>Mo, Yeon Gon</creator><creator>Choi, Rino</creator><creator>Jeong, Jae Kyeong</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201408</creationdate><title>Achieving High Field-Effect Mobility Exceeding 50 cm \(^}\) /Vs in In-Zn-Sn-O Thin-Film Transistors</title><author>Song, Ji Hun ; Kim, Kwang Suk ; Mo, Yeon Gon ; Choi, Rino ; Jeong, Jae Kyeong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c221t-c86fd4c725dbc6bcbd4e2baf722e38c416e00f49d7a1b5e918adb305b5b51933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>high mobility</topic><topic>Hydrogen</topic><topic>Indium zinc tin oxide semiconductor</topic><topic>Logic gates</topic><topic>NIST</topic><topic>nitride film</topic><topic>Passivation</topic><topic>Thin film transistors</topic><topic>Tin</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Song, Ji Hun</creatorcontrib><creatorcontrib>Kim, Kwang Suk</creatorcontrib><creatorcontrib>Mo, Yeon Gon</creatorcontrib><creatorcontrib>Choi, Rino</creatorcontrib><creatorcontrib>Jeong, Jae Kyeong</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Song, Ji Hun</au><au>Kim, Kwang Suk</au><au>Mo, Yeon Gon</au><au>Choi, Rino</au><au>Jeong, Jae Kyeong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Achieving High Field-Effect Mobility Exceeding 50 cm \(^}\) /Vs in In-Zn-Sn-O Thin-Film Transistors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2014-08</date><risdate>2014</risdate><volume>35</volume><issue>8</issue><spage>853</spage><epage>855</epage><pages>853-855</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Bottom gate and etch stopper-type thin-film transistors (TFTs) with a channel layer of indium-zinc-tin oxide were fabricated. The resulting TFTs exhibited a high mobility exceeding 52 cm 2 /Vs, a low subthreshold gate swing of 0.2 V/decade, a threshold voltage of 0.1 V, and an I ON/OFF ratio of >2 × 10 8 . The stability of the oxide passivated device under the positive and negative bias stress conditions was superior to that of the nitride passivated device, which can be attributed to the lower trap density in the channel layer.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2014.2329892</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2014-08, Vol.35 (8), p.853-855 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_LED_2014_2329892 |
| source | IEEE Electronic Library (IEL) |
| subjects | high mobility Hydrogen Indium zinc tin oxide semiconductor Logic gates NIST nitride film Passivation Thin film transistors Tin |
| title | Achieving High Field-Effect Mobility Exceeding 50 cm \(^}\) /Vs in In-Zn-Sn-O Thin-Film Transistors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T17%3A42%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Achieving%20High%20Field-Effect%20Mobility%20Exceeding%2050%20cm%20%5C(%5E%7D%5C)%20/Vs%20in%20In-Zn-Sn-O%20Thin-Film%20Transistors&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Song,%20Ji%20Hun&rft.date=2014-08&rft.volume=35&rft.issue=8&rft.spage=853&rft.epage=855&rft.pages=853-855&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2014.2329892&rft_dat=%3Cproquest_RIE%3E3388003161%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1549543592&rft_id=info:pmid/&rft_ieee_id=6840993&rfr_iscdi=true |