Research on a Highly Sensitive Magnetic-Catalytic CMOS-MEMS Compatible Gas Sensor
This letter proposes a new magnetic-catalytic sensing mechanism designed to increase the sensitivity of a gas sensor with mesh-stacked sensing electrodes. Beyond the conventional power dissipation of heating to maintain a certain working temperature, the novel gas sensor with a magnetic-catalytic me...
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| Veröffentlicht in: | IEEE electron device letters 2014-01, Vol.35 (1), p.120-122 |
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| container_title | IEEE electron device letters |
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| creator | SHEN, Chih-Hsiung KE, Shi-Ching |
| description | This letter proposes a new magnetic-catalytic sensing mechanism designed to increase the sensitivity of a gas sensor with mesh-stacked sensing electrodes. Beyond the conventional power dissipation of heating to maintain a certain working temperature, the novel gas sensor with a magnetic-catalytic mechanism operates at an ambient temperature, and heating power does not need to be considered. The standard 0.35 μm CMOS process was used to fabricate a gas sensor with mesh-stacked electrodes. To prepare the magnetic sensing material, a SnO 2 solution, prepared using the sol-gel method, was mixed with Fe 3 O 4 at a ratio of SnO 2 :Fe 3 O 4 =3:1 and was deposited onto mesh-stacked electrodes. When the CO gas sensor was introduced, the sample was tested and verified inside a CO gas chamber using a magnetic field generator composed of solenoidal coils. According to a careful investigation of the measurement results, the highest sensitivity, 1.73%/ppm, was obtained under 12 G in a horizontal magnetic field, indicating that the mechanism is applicable for use in an ultralow power chemical microsensor with high sensitivity. |
| doi_str_mv | 10.1109/LED.2013.2291771 |
| format | Article |
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Beyond the conventional power dissipation of heating to maintain a certain working temperature, the novel gas sensor with a magnetic-catalytic mechanism operates at an ambient temperature, and heating power does not need to be considered. The standard 0.35 μm CMOS process was used to fabricate a gas sensor with mesh-stacked electrodes. To prepare the magnetic sensing material, a SnO 2 solution, prepared using the sol-gel method, was mixed with Fe 3 O 4 at a ratio of SnO 2 :Fe 3 O 4 =3:1 and was deposited onto mesh-stacked electrodes. When the CO gas sensor was introduced, the sample was tested and verified inside a CO gas chamber using a magnetic field generator composed of solenoidal coils. According to a careful investigation of the measurement results, the highest sensitivity, 1.73%/ppm, was obtained under 12 G in a horizontal magnetic field, indicating that the mechanism is applicable for use in an ultralow power chemical microsensor with high sensitivity.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2013.2291771</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Chemicals ; Complementary metal oxide semiconductor-micro-electromechanical system (CMOS-MEMS) ; Design. Technologies. Operation analysis. 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Solid state devices ; Sensitivity ; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing ; {\rm Fe}_{3}{\rm O}_{4} ; {\rm SnO}_{2}</subject><ispartof>IEEE electron device letters, 2014-01, Vol.35 (1), p.120-122</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c246t-af187fb7298d8b46509ce9de5ab05e16f0a920818a4257139754631b845a4ad13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6679259$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,4010,27900,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6679259$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28149814$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SHEN, Chih-Hsiung</creatorcontrib><creatorcontrib>KE, Shi-Ching</creatorcontrib><title>Research on a Highly Sensitive Magnetic-Catalytic CMOS-MEMS Compatible Gas Sensor</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>This letter proposes a new magnetic-catalytic sensing mechanism designed to increase the sensitivity of a gas sensor with mesh-stacked sensing electrodes. Beyond the conventional power dissipation of heating to maintain a certain working temperature, the novel gas sensor with a magnetic-catalytic mechanism operates at an ambient temperature, and heating power does not need to be considered. The standard 0.35 μm CMOS process was used to fabricate a gas sensor with mesh-stacked electrodes. To prepare the magnetic sensing material, a SnO 2 solution, prepared using the sol-gel method, was mixed with Fe 3 O 4 at a ratio of SnO 2 :Fe 3 O 4 =3:1 and was deposited onto mesh-stacked electrodes. When the CO gas sensor was introduced, the sample was tested and verified inside a CO gas chamber using a magnetic field generator composed of solenoidal coils. According to a careful investigation of the measurement results, the highest sensitivity, 1.73%/ppm, was obtained under 12 G in a horizontal magnetic field, indicating that the mechanism is applicable for use in an ultralow power chemical microsensor with high sensitivity.</description><subject>Applied sciences</subject><subject>Chemicals</subject><subject>Complementary metal oxide semiconductor-micro-electromechanical system (CMOS-MEMS)</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gas detectors</subject><subject>gas sensor</subject><subject>General equipment and techniques</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Integrated circuits</subject><subject>magnetic catalyst</subject><subject>Materials</subject><subject>Metals</subject><subject>Micro- and nanoelectromechanical devices (mems/nems)</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Physics</subject><subject>reactive ion etching (RIE)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sensitivity</subject><subject>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</subject><subject>{\rm Fe}_{3}{\rm O}_{4}</subject><subject>{\rm SnO}_{2}</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhhdRsFbvgpe9eNy6s9nPo8RahYai1XOYpJt2JU1KNgj996a29DDMwPs-c3gIuQc-AeDuaT59mQgOyUQIB8bABRmBUpZxpZNLMuJGAkuA62tyE-MP5yClkSPy8emjx67c0LahSN_CelPv6dI3MfTh19MM143vQ8lS7LHeDxdNs8WSZdNsSdN2u8M-FLWnM4z_VNvdkqsK6-jvTntMvl-nX-kbmy9m7-nznJVC6p5hBdZUhRHOrmwhteKu9G7lFRZcedAVRye4BYtSKAOJM0rqBAorFUpcQTIm_Pi37NoYO1_luy5ssdvnwPODknxQkh-U5CclA_J4RHYYS6yrDpsyxDMnLEg3zNB7OPaC9_4ca22cUC75A4euZ-k</recordid><startdate>201401</startdate><enddate>201401</enddate><creator>SHEN, Chih-Hsiung</creator><creator>KE, Shi-Ching</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201401</creationdate><title>Research on a Highly Sensitive Magnetic-Catalytic CMOS-MEMS Compatible Gas Sensor</title><author>SHEN, Chih-Hsiung ; KE, Shi-Ching</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c246t-af187fb7298d8b46509ce9de5ab05e16f0a920818a4257139754631b845a4ad13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied sciences</topic><topic>Chemicals</topic><topic>Complementary metal oxide semiconductor-micro-electromechanical system (CMOS-MEMS)</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electrodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gas detectors</topic><topic>gas sensor</topic><topic>General equipment and techniques</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Integrated circuits</topic><topic>magnetic catalyst</topic><topic>Materials</topic><topic>Metals</topic><topic>Micro- and nanoelectromechanical devices (mems/nems)</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Physics</topic><topic>reactive ion etching (RIE)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Sensitivity</topic><topic>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</topic><topic>{\rm Fe}_{3}{\rm O}_{4}</topic><topic>{\rm SnO}_{2}</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SHEN, Chih-Hsiung</creatorcontrib><creatorcontrib>KE, Shi-Ching</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHEN, Chih-Hsiung</au><au>KE, Shi-Ching</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Research on a Highly Sensitive Magnetic-Catalytic CMOS-MEMS Compatible Gas Sensor</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2014-01</date><risdate>2014</risdate><volume>35</volume><issue>1</issue><spage>120</spage><epage>122</epage><pages>120-122</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>This letter proposes a new magnetic-catalytic sensing mechanism designed to increase the sensitivity of a gas sensor with mesh-stacked sensing electrodes. Beyond the conventional power dissipation of heating to maintain a certain working temperature, the novel gas sensor with a magnetic-catalytic mechanism operates at an ambient temperature, and heating power does not need to be considered. The standard 0.35 μm CMOS process was used to fabricate a gas sensor with mesh-stacked electrodes. To prepare the magnetic sensing material, a SnO 2 solution, prepared using the sol-gel method, was mixed with Fe 3 O 4 at a ratio of SnO 2 :Fe 3 O 4 =3:1 and was deposited onto mesh-stacked electrodes. When the CO gas sensor was introduced, the sample was tested and verified inside a CO gas chamber using a magnetic field generator composed of solenoidal coils. According to a careful investigation of the measurement results, the highest sensitivity, 1.73%/ppm, was obtained under 12 G in a horizontal magnetic field, indicating that the mechanism is applicable for use in an ultralow power chemical microsensor with high sensitivity.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2013.2291771</doi><tpages>3</tpages></addata></record> |
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| issn | 0741-3106 1558-0563 |
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| subjects | Applied sciences Chemicals Complementary metal oxide semiconductor-micro-electromechanical system (CMOS-MEMS) Design. Technologies. Operation analysis. Testing Electrodes Electronics Exact sciences and technology Gas detectors gas sensor General equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Integrated circuits magnetic catalyst Materials Metals Micro- and nanoelectromechanical devices (mems/nems) Microelectronic fabrication (materials and surfaces technology) Physics reactive ion etching (RIE) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensitivity Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing {\rm Fe}_{3}{\rm O}_{4} {\rm SnO}_{2} |
| title | Research on a Highly Sensitive Magnetic-Catalytic CMOS-MEMS Compatible Gas Sensor |
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