Multiple Moving Membrane CMUT With Enlarged Membrane Displacement and Low Pull-Down Voltage
A multiple moving membrane capacitive micromachined ultrasonic transducer ( M 3 -CMUT) has been fabricated and is shown to exhibit a significantly enlarged total membrane displacement ( ~ 280 nm) compared with the displacement of a conventional CMUT ( ~ 85 nm) for the same bias voltage. The M 3 -CMU...
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| Veröffentlicht in: | IEEE electron device letters 2013-12, Vol.34 (12), p.1578-1580 |
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| container_title | IEEE electron device letters |
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| creator | Emadi, Tahereh Arezoo Buchanan, Douglas A. |
| description | A multiple moving membrane capacitive micromachined ultrasonic transducer ( M 3 -CMUT) has been fabricated and is shown to exhibit a significantly enlarged total membrane displacement ( ~ 280 nm) compared with the displacement of a conventional CMUT ( ~ 85 nm) for the same bias voltage. The M 3 -CMUT exhibits a significant reduction of the device pull-down voltage, while showing a much higher capacitance change, 100 fF for the M 3 -CMUT compared with only 20 fF for CMUT, at a dc bias of 25 V. The device performance, sensitivity, and acoustic power generation capability are primarily associated with the magnitude of the displacement of the membrane, and therefore, are enhanced through employing multiple deflectable membranes in M 3 -CMUT device. This high performance M 3 -CMUT is a promising candidate for high resolution ultrasonic imaging application. |
| doi_str_mv | 10.1109/LED.2013.2286902 |
| format | Article |
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The M 3 -CMUT exhibits a significant reduction of the device pull-down voltage, while showing a much higher capacitance change, 100 fF for the M 3 -CMUT compared with only 20 fF for CMUT, at a dc bias of 25 V. The device performance, sensitivity, and acoustic power generation capability are primarily associated with the magnitude of the displacement of the membrane, and therefore, are enhanced through employing multiple deflectable membranes in M 3 -CMUT device. This high performance M 3 -CMUT is a promising candidate for high resolution ultrasonic imaging application.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2013.2286902</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acoustic wave devices, piezoelectric and piezoresistive devices ; Applied sciences ; Capacitance ; Capacitive micromachined ultrasonic transducer (CMUT) ; Cavity resonators ; Electrodes ; Electronics ; Exact sciences and technology ; Micro- and nanoelectromechanical devices (mems/nems) ; microelectromechanical system (MEMS) ; Microelectromechanical systems ; Microelectronic fabrication (materials and surfaces technology) ; pull-down voltage ; Resonant frequency ; sacrificial layer ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transducers ; Ultrasonic imaging ; Ultrasonic transducers ; Voltage measurement</subject><ispartof>IEEE electron device letters, 2013-12, Vol.34 (12), p.1578-1580</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Dec 2013</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c321t-a872ab87b0c0cdb1cc271459c255f9f726b1e95c4e39150ccf173084c58286763</citedby><cites>FETCH-LOGICAL-c321t-a872ab87b0c0cdb1cc271459c255f9f726b1e95c4e39150ccf173084c58286763</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6656896$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6656896$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28074637$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Emadi, Tahereh Arezoo</creatorcontrib><creatorcontrib>Buchanan, Douglas A.</creatorcontrib><title>Multiple Moving Membrane CMUT With Enlarged Membrane Displacement and Low Pull-Down Voltage</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A multiple moving membrane capacitive micromachined ultrasonic transducer ( M 3 -CMUT) has been fabricated and is shown to exhibit a significantly enlarged total membrane displacement ( ~ 280 nm) compared with the displacement of a conventional CMUT ( ~ 85 nm) for the same bias voltage. The M 3 -CMUT exhibits a significant reduction of the device pull-down voltage, while showing a much higher capacitance change, 100 fF for the M 3 -CMUT compared with only 20 fF for CMUT, at a dc bias of 25 V. The device performance, sensitivity, and acoustic power generation capability are primarily associated with the magnitude of the displacement of the membrane, and therefore, are enhanced through employing multiple deflectable membranes in M 3 -CMUT device. This high performance M 3 -CMUT is a promising candidate for high resolution ultrasonic imaging application.</description><subject>Acoustic wave devices, piezoelectric and piezoresistive devices</subject><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Capacitive micromachined ultrasonic transducer (CMUT)</subject><subject>Cavity resonators</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Micro- and nanoelectromechanical devices (mems/nems)</subject><subject>microelectromechanical system (MEMS)</subject><subject>Microelectromechanical systems</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>pull-down voltage</subject><subject>Resonant frequency</subject><subject>sacrificial layer</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transducers</subject><subject>Ultrasonic imaging</subject><subject>Ultrasonic transducers</subject><subject>Voltage measurement</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpFkEtLw0AUhQdRsFb3gpsBcZl65z1ZSlsfkKKLVhcuwmQ6qSnTJGYSi__elJa6uovzuJwPoWsCI0Igvk-mkxEFwkaUahkDPUEDIoSOQEh2igagOIkYAXmOLkJYAxDOFR-gz1nn26L2Ds-qn6Jc4ZnbZI0pHR7PFnP8UbRfeFp606zc8l-bFKH2xrqNK1tsyiVOqi1-67yPJtW2xO-Vb83KXaKz3Pjgrg53iBaP0_n4OUpen17GD0lkGSVtZLSiJtMqAwt2mRFrqSJcxJYKkce5ojIjLhaWOxYTAdbmRDHQ3ArdT1WSDdHtvrduqu_OhTZdV11T9i9TwiVwyilA74K9yzZVCI3L07opNqb5TQmkO4RpjzDdIUwPCPvI3aHYBGt83m-3RTjmqO6pSqZ6383eVzjnjrKUQupYsj8J4XfM</recordid><startdate>20131201</startdate><enddate>20131201</enddate><creator>Emadi, Tahereh Arezoo</creator><creator>Buchanan, Douglas A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20131201</creationdate><title>Multiple Moving Membrane CMUT With Enlarged Membrane Displacement and Low Pull-Down Voltage</title><author>Emadi, Tahereh Arezoo ; Buchanan, Douglas A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c321t-a872ab87b0c0cdb1cc271459c255f9f726b1e95c4e39150ccf173084c58286763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Acoustic wave devices, piezoelectric and piezoresistive devices</topic><topic>Applied sciences</topic><topic>Capacitance</topic><topic>Capacitive micromachined ultrasonic transducer (CMUT)</topic><topic>Cavity resonators</topic><topic>Electrodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Micro- and nanoelectromechanical devices (mems/nems)</topic><topic>microelectromechanical system (MEMS)</topic><topic>Microelectromechanical systems</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>pull-down voltage</topic><topic>Resonant frequency</topic><topic>sacrificial layer</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transducers</topic><topic>Ultrasonic imaging</topic><topic>Ultrasonic transducers</topic><topic>Voltage measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Emadi, Tahereh Arezoo</creatorcontrib><creatorcontrib>Buchanan, Douglas A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Emadi, Tahereh Arezoo</au><au>Buchanan, Douglas A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Multiple Moving Membrane CMUT With Enlarged Membrane Displacement and Low Pull-Down Voltage</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2013-12-01</date><risdate>2013</risdate><volume>34</volume><issue>12</issue><spage>1578</spage><epage>1580</epage><pages>1578-1580</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A multiple moving membrane capacitive micromachined ultrasonic transducer ( M 3 -CMUT) has been fabricated and is shown to exhibit a significantly enlarged total membrane displacement ( ~ 280 nm) compared with the displacement of a conventional CMUT ( ~ 85 nm) for the same bias voltage. The M 3 -CMUT exhibits a significant reduction of the device pull-down voltage, while showing a much higher capacitance change, 100 fF for the M 3 -CMUT compared with only 20 fF for CMUT, at a dc bias of 25 V. The device performance, sensitivity, and acoustic power generation capability are primarily associated with the magnitude of the displacement of the membrane, and therefore, are enhanced through employing multiple deflectable membranes in M 3 -CMUT device. This high performance M 3 -CMUT is a promising candidate for high resolution ultrasonic imaging application.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2013.2286902</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 2013-12, Vol.34 (12), p.1578-1580 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Acoustic wave devices, piezoelectric and piezoresistive devices Applied sciences Capacitance Capacitive micromachined ultrasonic transducer (CMUT) Cavity resonators Electrodes Electronics Exact sciences and technology Micro- and nanoelectromechanical devices (mems/nems) microelectromechanical system (MEMS) Microelectromechanical systems Microelectronic fabrication (materials and surfaces technology) pull-down voltage Resonant frequency sacrificial layer Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transducers Ultrasonic imaging Ultrasonic transducers Voltage measurement |
| title | Multiple Moving Membrane CMUT With Enlarged Membrane Displacement and Low Pull-Down Voltage |
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