Understanding Process Impact of Hole Traps and NBTI in HKMG p-MOSFETs Using Measurements and Atomistic Simulations

The impact of the gate insulator process on interlayer (IL) hole traps in IL/high-K dual-layer p-MOSFET gate-stack is studied by physical and electrical measurements along with atomistic simulations. Processes that lead to higher concentrations of Hf and N in IL, measured by angle-resolved X-ray pho...

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Veröffentlicht in:	IEEE electron device letters 2013-08, Vol.34 (8), p.963-965
Hauptverfasser:	Mahapatra, Souvik, De, Sandip, Joshi, Kaustubh, Mukhopadhyay, Subhadeep, Pandey, Rajan K., Murali, K. V. R. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Angle-resolved X-ray photoelectron spectroscopy (ARXPS) Applied sciences Atomic measurements Chem-Ox IL DCIV DFT simulations Electronics Exact sciences and technology flicker noise Hafnium compounds high-k metal gate (HKMG) hole traps Logic gates MOSFET circuits Negative bias temperature instability (NBTI) Noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon thermal Interlayer (IL) Transistors trap generation V_{\rm T} shift
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