Observation of Asymmetric Magnetoconductance in Strained 28-nm Si MOSFETs
We have measured gate current components off the axis perpendicular to the surface. The measured gate oxide magnetoconductance exhibits a pronounced magnetic asymmetry, which indicates that the gate current is flowing into different crystallographic orientations with different effective masses and h...
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| Veröffentlicht in: | IEEE electron device letters 2012-02, Vol.33 (2), p.254-256 |
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| container_end_page | 256 |
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| container_title | IEEE electron device letters |
| container_volume | 33 |
| creator | Gutierrez-D, Edmundo A. Pondigo-de los A, E. Vega-G, Victor H. Guarin, F. |
| description | We have measured gate current components off the axis perpendicular to the surface. The measured gate oxide magnetoconductance exhibits a pronounced magnetic asymmetry, which indicates that the gate current is flowing into different crystallographic orientations with different effective masses and hole mobilities. By identifying and monitoring the different gate current axis components, we have enhanced the understanding of the physics for Si-oxide interface charge transfer and channel conductance in low-dimensional semiconductor devices. |
| doi_str_mv | 10.1109/LED.2011.2177491 |
| format | Article |
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The measured gate oxide magnetoconductance exhibits a pronounced magnetic asymmetry, which indicates that the gate current is flowing into different crystallographic orientations with different effective masses and hole mobilities. By identifying and monitoring the different gate current axis components, we have enhanced the understanding of the physics for Si-oxide interface charge transfer and channel conductance in low-dimensional semiconductor devices.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2011.2177491</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Asymmetry ; Channels ; Charge transfer ; Conductance ; Current measurement ; Electronics ; Exact sciences and technology ; Gates ; Logic gates ; Magnetic semiconductors ; Magnetic tunneling ; Monitoring ; MOSFETs ; Nanoscaled MOSFETs ; Oxides ; Perpendicular magnetic anisotropy ; quantum magnetoconductance ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>IEEE electron device letters, 2012-02, Vol.33 (2), p.254-256</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Feb 2012</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-d273f78148e67b96c1b669f9fefa4baa6103027fad42709188d5dffd5538a123</citedby><cites>FETCH-LOGICAL-c353t-d273f78148e67b96c1b669f9fefa4baa6103027fad42709188d5dffd5538a123</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6125216$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6125216$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25488375$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Gutierrez-D, Edmundo A.</creatorcontrib><creatorcontrib>Pondigo-de los A, E.</creatorcontrib><creatorcontrib>Vega-G, Victor H.</creatorcontrib><creatorcontrib>Guarin, F.</creatorcontrib><title>Observation of Asymmetric Magnetoconductance in Strained 28-nm Si MOSFETs</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We have measured gate current components off the axis perpendicular to the surface. The measured gate oxide magnetoconductance exhibits a pronounced magnetic asymmetry, which indicates that the gate current is flowing into different crystallographic orientations with different effective masses and hole mobilities. By identifying and monitoring the different gate current axis components, we have enhanced the understanding of the physics for Si-oxide interface charge transfer and channel conductance in low-dimensional semiconductor devices.</description><subject>Applied sciences</subject><subject>Asymmetry</subject><subject>Channels</subject><subject>Charge transfer</subject><subject>Conductance</subject><subject>Current measurement</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gates</subject><subject>Logic gates</subject><subject>Magnetic semiconductors</subject><subject>Magnetic tunneling</subject><subject>Monitoring</subject><subject>MOSFETs</subject><subject>Nanoscaled MOSFETs</subject><subject>Oxides</subject><subject>Perpendicular magnetic anisotropy</subject><subject>quantum magnetoconductance</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEtLxDAURoMoOD72gpsiCG465ubd5TA-YYZZzOxLmiYSaVNNWsF_b2QGF64u3Hu-j8tB6ArwHABX96vHhznBAHMCUrIKjtAMOFcl5oIeoxmWDEoKWJyis5TeMQbGJJuh102TbPzSox9CMbhikb773o7Rm2Kt34IdBzOEdjKjDsYWPhTbMWofbFsQVYa-2Ppivdk-Pe7SBTpxukv28jDP0S6vly_lavP8ulysSkM5HcuWSOqkAqaskE0lDDRCVK5y1mnWaC0AU0yk0y0jElegVMtb51rOqdJA6Dm629d-xOFzsmmse5-M7Tod7DClGnC2QSpZsYze_EPfhymG_FydeymhQuAM4T1k4pBStK7-iL7X8Ts31b9m62y2_jVbH8zmyO2hVyejOxezG5_-coQzpajkmbvec95a-3cWQDgBQX8AsUB-_A</recordid><startdate>20120201</startdate><enddate>20120201</enddate><creator>Gutierrez-D, Edmundo A.</creator><creator>Pondigo-de los A, E.</creator><creator>Vega-G, Victor H.</creator><creator>Guarin, F.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20120201</creationdate><title>Observation of Asymmetric Magnetoconductance in Strained 28-nm Si MOSFETs</title><author>Gutierrez-D, Edmundo A. ; Pondigo-de los A, E. ; Vega-G, Victor H. ; Guarin, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-d273f78148e67b96c1b669f9fefa4baa6103027fad42709188d5dffd5538a123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Asymmetry</topic><topic>Channels</topic><topic>Charge transfer</topic><topic>Conductance</topic><topic>Current measurement</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gates</topic><topic>Logic gates</topic><topic>Magnetic semiconductors</topic><topic>Magnetic tunneling</topic><topic>Monitoring</topic><topic>MOSFETs</topic><topic>Nanoscaled MOSFETs</topic><topic>Oxides</topic><topic>Perpendicular magnetic anisotropy</topic><topic>quantum magnetoconductance</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gutierrez-D, Edmundo A.</creatorcontrib><creatorcontrib>Pondigo-de los A, E.</creatorcontrib><creatorcontrib>Vega-G, Victor H.</creatorcontrib><creatorcontrib>Guarin, F.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gutierrez-D, Edmundo A.</au><au>Pondigo-de los A, E.</au><au>Vega-G, Victor H.</au><au>Guarin, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Observation of Asymmetric Magnetoconductance in Strained 28-nm Si MOSFETs</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2012-02-01</date><risdate>2012</risdate><volume>33</volume><issue>2</issue><spage>254</spage><epage>256</epage><pages>254-256</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We have measured gate current components off the axis perpendicular to the surface. The measured gate oxide magnetoconductance exhibits a pronounced magnetic asymmetry, which indicates that the gate current is flowing into different crystallographic orientations with different effective masses and hole mobilities. By identifying and monitoring the different gate current axis components, we have enhanced the understanding of the physics for Si-oxide interface charge transfer and channel conductance in low-dimensional semiconductor devices.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2011.2177491</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 2012-02, Vol.33 (2), p.254-256 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Asymmetry Channels Charge transfer Conductance Current measurement Electronics Exact sciences and technology Gates Logic gates Magnetic semiconductors Magnetic tunneling Monitoring MOSFETs Nanoscaled MOSFETs Oxides Perpendicular magnetic anisotropy quantum magnetoconductance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Observation of Asymmetric Magnetoconductance in Strained 28-nm Si MOSFETs |
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