$Effect of \hbox\hbox\hbox Thermal Barrier on Reset Operations in Filament-Type Resistive Memory$

Effect of \hbox\hbox\hbox Thermal Barrier on Reset Operations in Filament-Type Resistive Memory

We have investigated the effect of a Ge 2 Sb 2 Te 5 (GST) thermal barrier on the reset operations in TiN/Cu/SiC/Pt devices. When the GST film was introduced as a thermal barrier, the device showed a lower reset voltage and a lower reset current than a device without the GST layer. In particular, the...

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Veröffentlicht in:	IEEE electron device letters 2011-11, Vol.32 (11), p.1573-1575
Hauptverfasser:	Wootae Lee, Siddik, M., Seungjae Jung, Jubong Park, Seonghyun Kim, Jungho Shin, Joonmyoung Lee, Sangsu Park, Myungwoo Son, Hyunsang Hwang
Format:	Artikel
Sprache:	eng
Schlagworte:	Copper hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5} (GST) Heating Materials programmable metallization cell (PMC) Silicon carbide Switches thermal barrier Thermal resistance Tin
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