Simple Fabrication of a Three-Dimensional CMOS Inverter Using p-Type Poly-Si and n-Type Amorphous Ga-In-Zn-O Thin-Film Transistors

We have successfully fabricated a novel 3-D vertically stacked complementary metal-oxide-semiconductor hybrid inverter using a lower p-type poly-Si thin-film transistor (TFT) and an upper n-type amorphous Ga-In-Zn-O (a-GIZO) TFT. The device was fabricated step by step, starting from the fabrication...

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Veröffentlicht in:	IEEE electron device letters 2011-09, Vol.32 (9), p.1236-1238
Hauptverfasser:	Jin, Guanghai, Choi, Jonghyun, Lee, Wonpil, Mo, Yeongon, Kim, Hyedong, Kim, Sangsoo, Kim, Moojin, Song, Jonghyun
Format:	Artikel
Sprache:	eng
Schlagworte:	3-D Applied sciences CMOS CMOS integrated circuits Design. Technologies. Operation analysis. Testing Devices Electrodes Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Fabrication Gates Integrated circuits Inverters Logic gates LTPS oxide thin-film transistor (TFT) Performance evaluation Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices TFTs Thin film transistors Three dimensional Transistors
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