Photosensitivity of Field-Effect Transistors Based on ZnO Nanowire Networks

Self-assembling ordered ZnO nanowire (NW) network-based field-effect transistors (FETs) were fabricated by bottom-up photolithography. The devices had on/off ratios of >; 10 4 , mobilities of ~1.31 cm 2 V -1 s -1 , mobilities of and threshold voltages of ~-1 V. Under UV treatment (340 nm, 57.46 )...

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Veröffentlicht in:	IEEE electron device letters 2011-03, Vol.32 (3), p.339-341
Hauptverfasser:	PENG, Shi-Ming, SU, Yan-Kuin, JI, Liang-Wen, YOUNG, Sheng-Joue, WU, Cheng-Zhi, CHENG, Wei-Bin, CHAO, Wan-Chun, TSAI, Chi-Nan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Cross-disciplinary physics: materials science rheology Devices Electronics Exact sciences and technology FETs Field-effect transistor (FET) Logic gates Materials science Microelectronic fabrication (materials and surfaces technology) Modulation Nanocomposites Nanomaterials Nanoscale materials and structures: fabrication and characterization Nanostructure Nanowires Networks Photoconductivity photosensitivity Physics Quantum wires Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Zinc oxide ZnO nanowire
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