The Role of CuAlO Interface Layer for Switching Behavior of Al/ \hbox\hbox/Cu Memory Device
The interface layer between a reactive electrode and switching metal oxide is quite critical to improve the switching characteristics, but the intrinsic roles of this interfacial layer as oxygen reservoir or switching layer are still controversial. In this letter, we investigated the switching behav...
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| Veröffentlicht in: | IEEE electron device letters 2010-12, Vol.31 (12), p.1464-1466 |
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| creator | Lv, Hangbing Tang, Tingao |
| description | The interface layer between a reactive electrode and switching metal oxide is quite critical to improve the switching characteristics, but the intrinsic roles of this interfacial layer as oxygen reservoir or switching layer are still controversial. In this letter, we investigated the switching behavior of Cu x O-based device by fully removing the top insulating Cu 2 O layer, with lower conductive gradient Cu x O layer left. The devices with Pt/gradient Cu x O/Cu structure were shorted; however, other devices with Al/gradient Cu x O/Cu structure still functioned normally. We suggest the interface layer formed between Al and Cu x O acts as the switching layer. The results of an annealing experiment further reinforce this conclusion. The samples with preannealing before Al electrode deposition show similar characteristics with the nonannealed samples; however, the postannealing devices exhibit tremendous difference. Both R ini and V forming increase with the annealing temperature greatly. |
| doi_str_mv | 10.1109/LED.2010.2081339 |
| format | Article |
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In this letter, we investigated the switching behavior of Cu x O-based device by fully removing the top insulating Cu 2 O layer, with lower conductive gradient Cu x O layer left. The devices with Pt/gradient Cu x O/Cu structure were shorted; however, other devices with Al/gradient Cu x O/Cu structure still functioned normally. We suggest the interface layer formed between Al and Cu x O acts as the switching layer. The results of an annealing experiment further reinforce this conclusion. The samples with preannealing before Al electrode deposition show similar characteristics with the nonannealed samples; however, the postannealing devices exhibit tremendous difference. Both R ini and V forming increase with the annealing temperature greatly.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2010.2081339</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Copper ; Electrodes ; Etching ; Interface ; MOS devices ; Plasmas ; Reactive power ; resistive switching (RS) ; RRAM</subject><ispartof>IEEE electron device letters, 2010-12, Vol.31 (12), p.1464-1466</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1081-372f401893f6079a7318b08b104936d070dc2d688c8a1c45d91414785a50bba83</citedby><cites>FETCH-LOGICAL-c1081-372f401893f6079a7318b08b104936d070dc2d688c8a1c45d91414785a50bba83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5618541$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5618541$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lv, Hangbing</creatorcontrib><creatorcontrib>Tang, Tingao</creatorcontrib><title>The Role of CuAlO Interface Layer for Switching Behavior of Al/ \hbox\hbox/Cu Memory Device</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>The interface layer between a reactive electrode and switching metal oxide is quite critical to improve the switching characteristics, but the intrinsic roles of this interfacial layer as oxygen reservoir or switching layer are still controversial. In this letter, we investigated the switching behavior of Cu x O-based device by fully removing the top insulating Cu 2 O layer, with lower conductive gradient Cu x O layer left. The devices with Pt/gradient Cu x O/Cu structure were shorted; however, other devices with Al/gradient Cu x O/Cu structure still functioned normally. We suggest the interface layer formed between Al and Cu x O acts as the switching layer. The results of an annealing experiment further reinforce this conclusion. The samples with preannealing before Al electrode deposition show similar characteristics with the nonannealed samples; however, the postannealing devices exhibit tremendous difference. Both R ini and V forming increase with the annealing temperature greatly.</description><subject>Annealing</subject><subject>Copper</subject><subject>Electrodes</subject><subject>Etching</subject><subject>Interface</subject><subject>MOS devices</subject><subject>Plasmas</subject><subject>Reactive power</subject><subject>resistive switching (RS)</subject><subject>RRAM</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE9Lw0AQxRdRsFbvgpf9AmlnsrvZzbGm_ilEClpPCmGzmZhI2simrfbbm9riZYYZ3ns8foxdI4wQIR6nd9NRCP0VgkEh4hM2QKVMACoSp2wAWmIgEKJzdtF1nwAopZYD9raoiD-3DfG25Mlm0sz5bLUmX1pHPLU78rxsPX_5rteuqlcf_JYqu637V6-fNGP-XuXtz98YJxv-RMvW7_iUtrWjS3ZW2qajq-Mestf7u0XyGKTzh1kySQOHfddA6LCUgCYWZQQ6tlqgycHkCDIWUQEaChcWkTHOWHRSFTFKlNooqyDPrRFDBodc59uu81RmX75eWr_LELI9nKyHk-3hZEc4veXmYKmJ6F-uIjRKovgFfL1dhw</recordid><startdate>201012</startdate><enddate>201012</enddate><creator>Lv, Hangbing</creator><creator>Tang, Tingao</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201012</creationdate><title>The Role of CuAlO Interface Layer for Switching Behavior of Al/ \hbox\hbox/Cu Memory Device</title><author>Lv, Hangbing ; Tang, Tingao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1081-372f401893f6079a7318b08b104936d070dc2d688c8a1c45d91414785a50bba83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Annealing</topic><topic>Copper</topic><topic>Electrodes</topic><topic>Etching</topic><topic>Interface</topic><topic>MOS devices</topic><topic>Plasmas</topic><topic>Reactive power</topic><topic>resistive switching (RS)</topic><topic>RRAM</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lv, Hangbing</creatorcontrib><creatorcontrib>Tang, Tingao</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lv, Hangbing</au><au>Tang, Tingao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Role of CuAlO Interface Layer for Switching Behavior of Al/ \hbox\hbox/Cu Memory Device</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2010-12</date><risdate>2010</risdate><volume>31</volume><issue>12</issue><spage>1464</spage><epage>1466</epage><pages>1464-1466</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The interface layer between a reactive electrode and switching metal oxide is quite critical to improve the switching characteristics, but the intrinsic roles of this interfacial layer as oxygen reservoir or switching layer are still controversial. In this letter, we investigated the switching behavior of Cu x O-based device by fully removing the top insulating Cu 2 O layer, with lower conductive gradient Cu x O layer left. The devices with Pt/gradient Cu x O/Cu structure were shorted; however, other devices with Al/gradient Cu x O/Cu structure still functioned normally. We suggest the interface layer formed between Al and Cu x O acts as the switching layer. The results of an annealing experiment further reinforce this conclusion. The samples with preannealing before Al electrode deposition show similar characteristics with the nonannealed samples; however, the postannealing devices exhibit tremendous difference. Both R ini and V forming increase with the annealing temperature greatly.</abstract><pub>IEEE</pub><doi>10.1109/LED.2010.2081339</doi><tpages>3</tpages></addata></record> |
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| subjects | Annealing Copper Electrodes Etching Interface MOS devices Plasmas Reactive power resistive switching (RS) RRAM |
| title | The Role of CuAlO Interface Layer for Switching Behavior of Al/ \hbox\hbox/Cu Memory Device |
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