Wafer-Level Packaged Light-Emitting Diodes Using Photodielectric Resin

A large area (1600 mum times 800 mum) high-brightness light-emitting diode (HB LED) employing rearranged metal pads and multipassivation layers is presented. To enlarge the active layer with a smaller mesa area and improve package productivity using large bonding pads, two electrodes were used to fa...

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Veröffentlicht in:	IEEE electron device letters 2009-06, Vol.30 (6), p.638-640
Hauptverfasser:	KIM, Sang-Mook, LEE, Kwang-Cheol, YOUNG MOON YU, JONG HYEOB BAEK, GUN YOUNG JUNG
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bonding Circuit boards Design. Technologies. Operation analysis. Testing Devices Electric potential Electrodes Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Integrated circuits Light emitting diodes Light-emitting diodes (LEDs) Optoelectronic devices Packaging Passivation photodielectric resin Polymers Printed circuits Productivity rearranged metal Resins Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Wafer bonding Wafer scale integration wafer-level package Wire
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