Ultrahigh Capacitance Density for Multiple ALD-Grown MIM Capacitor Stacks in 3-D Silicon

ldquoTrenchrdquo capacitors containing multiple metal-insulator-metal (MIM) layer stacks are realized by atomic-layer deposition (ALD), yielding an ultrahigh capacitance density of 440 at a breakdown voltage V DB > 6 V. This capacitance density on silicon is at least 10times higher than the value...

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Veröffentlicht in:	IEEE electron device letters 2008-07, Vol.29 (7), p.740-742
Hauptverfasser:	Klootwijk, J.H., Jinesh, K.B., Dekkers, W., Verhoeven, J.F., van den Heuvel, F.C., Kim, H.-D., Blin, D., Verheijen, M.A., Weemaes, R., Kaiser, M., Ruigrok, J., Roozeboom, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	3D silicon Annealing Applied sciences Atomic layer deposition Atomic-layer deposition (ALD) Breakdown Capacitance Capacitors Compound structure devices Conductivity deep reactive ion etching (DRIE) Density Deposition Dielectric substrates Dielectric, amorphous and glass solid devices Electrodes Electronics equivalent series inductance (ESL) equivalent series resistance (ESR) Exact sciences and technology Fowler-Nordheim (FN) tunneling high- k dielectrics high-density capacitors low pressure chemical vapor deposition (LPCVD) macropore arrays Metal-insulator structures metal-insulator-metal (MIM) Microelectronic fabrication (materials and surfaces technology) MIM capacitors reactive ion etching (RIE) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon silicon devices Stacks Tin
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