Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

The growth of AlGaN/GaN-based heterostructure on Si(110) substrates by molecular beam epitaxy using ammonia as the nitrogen precursor is reported. The structural, optical, and electrical properties of such heterostructure are assessed and are quite similar to the ones obtained on Si(111). A 2-D elec...

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Veröffentlicht in:	IEEE electron device letters 2008-11, Vol.29 (11), p.1187-1189
Hauptverfasser:	Cordier, Y., Moreno, J.-C., Baron, N., Frayssinet, E., Chenot, S., Damilano, B., Semond, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN Aluminum gallium nitride Aluminum gallium nitrides Applied sciences Charge carrier density Compound structure devices Devices Electrical properties Electron mobility Electron optics Electronics Exact sciences and technology Gallium nitride Gallium nitrides GaN HEMTs Heterostructures high-electron-mobility transistor (HEMT) Microelectronic fabrication (materials and surfaces technology) MODFETs Molecular beam epitaxial growth Molecular beam epitaxy Nitrogen Optical properties Precursors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Transistors
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