On the Source of Jitter in a Room-Temperature Nanoinjection Photon Detector at 1.55 \mu \hbox
The transient response of a nanoinjection infrared photon detector was studied by exploring the relation between lateral charge transfer and jitter. The jitter of the device was measured to be 15 ps at room temperature. The jitter was almost independent of the pulse power, even after device saturati...
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| Veröffentlicht in: | IEEE electron device letters 2008-08, Vol.29 (8), p.867-869 |
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| container_end_page | 869 |
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| container_title | IEEE electron device letters |
| container_volume | 29 |
| creator | Memis, O.G. Katsnelson, A. Mohseni, H. Minjun Yan Shuang Zhang Hossain, T. Niu Jin Adesida, I. |
| description | The transient response of a nanoinjection infrared photon detector was studied by exploring the relation between lateral charge transfer and jitter. The jitter of the device was measured to be 15 ps at room temperature. The jitter was almost independent of the pulse power, even after device saturation. Spatial maps for delay and amplitude were acquired. The carrier velocity was extracted from the measurements and compared with that of the simulation model. The jitter due to transit time was calculated to be in agreement with the measured data, which indicated that the jitter is primarily transit time limited. |
| doi_str_mv | 10.1109/LED.2008.2001123 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LED_2008_2001123</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4571134</ieee_id><sourcerecordid>10_1109_LED_2008_2001123</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1084-4a2ccd3a8a67c499b3b5b0379582b506b65bb7ea4331c9c741bbe586ad2711263</originalsourceid><addsrcrecordid>eNo9kF9LwzAUxYMoOKfvgi_3C3QmzZ-2j7LNqQwnOt8mJcluWYdtRpqCfntTNny5By7nHDg_Qm4ZnTBGi_vlfDZJKc2Hw1jKz8iISZknVCp-TkY0EyzhjKpLctV1--gRIhMj8rVqIewQPlzvLYKr4KUOAT3ULWh4d65J1tgc0OvQe4RX3bq63aMNtWvhbedClBmG-HAedAA2kRI2TQ-bnXE_1-Si0t8d3px0TD4f5-vpU7JcLZ6nD8vEMpqLROjU2i3XuVaZFUVhuJGG8qyQeWokVUZJYzLUgnNmCxunGIMyV3qbZnGr4mNCj73Wu67zWJUHXzfa_5aMlgOeMuIpBzzlCU-M3B0jNSL-24WMhVzwPy8DX20</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>On the Source of Jitter in a Room-Temperature Nanoinjection Photon Detector at 1.55 \mu \hbox</title><source>IEEE Electronic Library (IEL)</source><creator>Memis, O.G. ; Katsnelson, A. ; Mohseni, H. ; Minjun Yan ; Shuang Zhang ; Hossain, T. ; Niu Jin ; Adesida, I.</creator><creatorcontrib>Memis, O.G. ; Katsnelson, A. ; Mohseni, H. ; Minjun Yan ; Shuang Zhang ; Hossain, T. ; Niu Jin ; Adesida, I.</creatorcontrib><description>The transient response of a nanoinjection infrared photon detector was studied by exploring the relation between lateral charge transfer and jitter. The jitter of the device was measured to be 15 ps at room temperature. The jitter was almost independent of the pulse power, even after device saturation. Spatial maps for delay and amplitude were acquired. The carrier velocity was extracted from the measurements and compared with that of the simulation model. The jitter due to transit time was calculated to be in agreement with the measured data, which indicated that the jitter is primarily transit time limited.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2008.2001123</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Delay ; Indium gallium arsenide ; Indium phosphide ; Infrared detectors ; Jitter ; lateral transport ; nanoinjection ; Noise level ; photon detector ; Photonics ; Superconducting photodetectors ; Temperature ; Transient response</subject><ispartof>IEEE electron device letters, 2008-08, Vol.29 (8), p.867-869</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1084-4a2ccd3a8a67c499b3b5b0379582b506b65bb7ea4331c9c741bbe586ad2711263</citedby><cites>FETCH-LOGICAL-c1084-4a2ccd3a8a67c499b3b5b0379582b506b65bb7ea4331c9c741bbe586ad2711263</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4571134$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4571134$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Memis, O.G.</creatorcontrib><creatorcontrib>Katsnelson, A.</creatorcontrib><creatorcontrib>Mohseni, H.</creatorcontrib><creatorcontrib>Minjun Yan</creatorcontrib><creatorcontrib>Shuang Zhang</creatorcontrib><creatorcontrib>Hossain, T.</creatorcontrib><creatorcontrib>Niu Jin</creatorcontrib><creatorcontrib>Adesida, I.</creatorcontrib><title>On the Source of Jitter in a Room-Temperature Nanoinjection Photon Detector at 1.55 \mu \hbox</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>The transient response of a nanoinjection infrared photon detector was studied by exploring the relation between lateral charge transfer and jitter. The jitter of the device was measured to be 15 ps at room temperature. The jitter was almost independent of the pulse power, even after device saturation. Spatial maps for delay and amplitude were acquired. The carrier velocity was extracted from the measurements and compared with that of the simulation model. The jitter due to transit time was calculated to be in agreement with the measured data, which indicated that the jitter is primarily transit time limited.</description><subject>Delay</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>Infrared detectors</subject><subject>Jitter</subject><subject>lateral transport</subject><subject>nanoinjection</subject><subject>Noise level</subject><subject>photon detector</subject><subject>Photonics</subject><subject>Superconducting photodetectors</subject><subject>Temperature</subject><subject>Transient response</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF9LwzAUxYMoOKfvgi_3C3QmzZ-2j7LNqQwnOt8mJcluWYdtRpqCfntTNny5By7nHDg_Qm4ZnTBGi_vlfDZJKc2Hw1jKz8iISZknVCp-TkY0EyzhjKpLctV1--gRIhMj8rVqIewQPlzvLYKr4KUOAT3ULWh4d65J1tgc0OvQe4RX3bq63aMNtWvhbedClBmG-HAedAA2kRI2TQ-bnXE_1-Si0t8d3px0TD4f5-vpU7JcLZ6nD8vEMpqLROjU2i3XuVaZFUVhuJGG8qyQeWokVUZJYzLUgnNmCxunGIMyV3qbZnGr4mNCj73Wu67zWJUHXzfa_5aMlgOeMuIpBzzlCU-M3B0jNSL-24WMhVzwPy8DX20</recordid><startdate>200808</startdate><enddate>200808</enddate><creator>Memis, O.G.</creator><creator>Katsnelson, A.</creator><creator>Mohseni, H.</creator><creator>Minjun Yan</creator><creator>Shuang Zhang</creator><creator>Hossain, T.</creator><creator>Niu Jin</creator><creator>Adesida, I.</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200808</creationdate><title>On the Source of Jitter in a Room-Temperature Nanoinjection Photon Detector at 1.55 \mu \hbox</title><author>Memis, O.G. ; Katsnelson, A. ; Mohseni, H. ; Minjun Yan ; Shuang Zhang ; Hossain, T. ; Niu Jin ; Adesida, I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1084-4a2ccd3a8a67c499b3b5b0379582b506b65bb7ea4331c9c741bbe586ad2711263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Delay</topic><topic>Indium gallium arsenide</topic><topic>Indium phosphide</topic><topic>Infrared detectors</topic><topic>Jitter</topic><topic>lateral transport</topic><topic>nanoinjection</topic><topic>Noise level</topic><topic>photon detector</topic><topic>Photonics</topic><topic>Superconducting photodetectors</topic><topic>Temperature</topic><topic>Transient response</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Memis, O.G.</creatorcontrib><creatorcontrib>Katsnelson, A.</creatorcontrib><creatorcontrib>Mohseni, H.</creatorcontrib><creatorcontrib>Minjun Yan</creatorcontrib><creatorcontrib>Shuang Zhang</creatorcontrib><creatorcontrib>Hossain, T.</creatorcontrib><creatorcontrib>Niu Jin</creatorcontrib><creatorcontrib>Adesida, I.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Memis, O.G.</au><au>Katsnelson, A.</au><au>Mohseni, H.</au><au>Minjun Yan</au><au>Shuang Zhang</au><au>Hossain, T.</au><au>Niu Jin</au><au>Adesida, I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the Source of Jitter in a Room-Temperature Nanoinjection Photon Detector at 1.55 \mu \hbox</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2008-08</date><risdate>2008</risdate><volume>29</volume><issue>8</issue><spage>867</spage><epage>869</epage><pages>867-869</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The transient response of a nanoinjection infrared photon detector was studied by exploring the relation between lateral charge transfer and jitter. The jitter of the device was measured to be 15 ps at room temperature. The jitter was almost independent of the pulse power, even after device saturation. Spatial maps for delay and amplitude were acquired. The carrier velocity was extracted from the measurements and compared with that of the simulation model. The jitter due to transit time was calculated to be in agreement with the measured data, which indicated that the jitter is primarily transit time limited.</abstract><pub>IEEE</pub><doi>10.1109/LED.2008.2001123</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 2008-08, Vol.29 (8), p.867-869 |
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| subjects | Delay Indium gallium arsenide Indium phosphide Infrared detectors Jitter lateral transport nanoinjection Noise level photon detector Photonics Superconducting photodetectors Temperature Transient response |
| title | On the Source of Jitter in a Room-Temperature Nanoinjection Photon Detector at 1.55 \mu \hbox |
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