50-nm T-Gate InAlAs/InGaAs Metamorphic HEMTs With Low Noise and High f Characteristics

We report 50-nm T-gate metamorphic high-electron mobility transistors (MHEMTs) with low noise figure and high characteristics. The 30 mumtimes2 MHEMT shows a drain current density of 690 mA/mm, a g m,max of 1270 mS/mm, an f T of 489 GHz, and an of 422 GHz. In the frequency range of 59-61 GHz, the no...

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Veröffentlicht in:	IEEE electron device letters 2007-07, Vol.28 (7), p.546-548
Hauptverfasser:	Lim, Byeong Ok, Lee, Mun Kyo, Baek, Tae Jong, Han, Min, Kim, Sung Chan, Rhee, Jin-Koo
Format:	Artikel
Sprache:	eng
Schlagworte:	50 nm Current density Current gain cutoff frequency Frequency HEMTs Indium compounds Indium gallium arsenide low noise metamorphic high-electron mobility transistor (MHEMT) mHEMTs millimeter-wave frequency MODFETs Noise figure Performance gain Voltage
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