Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope
Flexibly controllable threshold-voltage (V th ) asymmetric gate-oxide thickness (T ox ) four-terminal (4T) FinFETs with HfO 2 [equivalentoxidethickness(EOT)=1.4 nm] for the drive gate and HfO 2 +thick SiO 2 (EOT=6.4-9.4 nm) for the V th -control gate have been successfully fabricated by utilizing io...
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| Veröffentlicht in: | IEEE electron device letters 2007-03, Vol.28 (3), p.217-219 |
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| creator | Masahara, M. Surdeanu, R. Witters, L. Doornbos, G. Nguyen, V.H. Van den bosch, G. Vrancken, C. Devriendt, K. Neuilly, F. Kunnen, E. Jurczak, M. Biesemans, S. |
| description | Flexibly controllable threshold-voltage (V th ) asymmetric gate-oxide thickness (T ox ) four-terminal (4T) FinFETs with HfO 2 [equivalentoxidethickness(EOT)=1.4 nm] for the drive gate and HfO 2 +thick SiO 2 (EOT=6.4-9.4 nm) for the V th -control gate have been successfully fabricated by utilizing ion-bombardment-enhanced etching process. Owing to the slightly thick V th -control gate oxide, the subthreshold slope (S) is significantly improved as compared to the symmetrically thin T ox 4T-FinFETs. As a result, the asymmetric T ox 4T-FinFETs gain higher I on than that for the symmetrically thin T ox 4T-FinFETs under the same I off conditions |
| doi_str_mv | 10.1109/LED.2007.891303 |
| format | Article |
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Owing to the slightly thick V th -control gate oxide, the subthreshold slope (S) is significantly improved as compared to the symmetrically thin T ox 4T-FinFETs. As a result, the asymmetric T ox 4T-FinFETs gain higher I on than that for the symmetrically thin T ox 4T-FinFETs under the same I off conditions</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2007.891303</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Asymmetric gate-oxide thickness ; Asymmetry ; Circuit optimization ; Electronics ; Equivalence ; Etching ; Exact sciences and technology ; Fabrication ; FinFET ; FinFETs ; four-terminal (4T) FinFET ; Gain ; Gates ; Hafnium oxide ; Integrated circuit technology ; ion-bombardment-enhanced etching (IBEE) ; Microelectronics ; Oxides ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Stability ; subthreshold slope ; Thickness control ; Threshold voltage ; threshold-voltage control ; Transistors ; Voltage control</subject><ispartof>IEEE electron device letters, 2007-03, Vol.28 (3), p.217-219</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c447t-d94cfdbe4dfab5e2b3c95026f0d7978977ecf3bea7190fa1645f3f6319cb67ca3</citedby><cites>FETCH-LOGICAL-c447t-d94cfdbe4dfab5e2b3c95026f0d7978977ecf3bea7190fa1645f3f6319cb67ca3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4114576$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4114576$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18568869$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Masahara, M.</creatorcontrib><creatorcontrib>Surdeanu, R.</creatorcontrib><creatorcontrib>Witters, L.</creatorcontrib><creatorcontrib>Doornbos, G.</creatorcontrib><creatorcontrib>Nguyen, V.H.</creatorcontrib><creatorcontrib>Van den bosch, G.</creatorcontrib><creatorcontrib>Vrancken, C.</creatorcontrib><creatorcontrib>Devriendt, K.</creatorcontrib><creatorcontrib>Neuilly, F.</creatorcontrib><creatorcontrib>Kunnen, E.</creatorcontrib><creatorcontrib>Jurczak, M.</creatorcontrib><creatorcontrib>Biesemans, S.</creatorcontrib><title>Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Flexibly controllable threshold-voltage (V th ) asymmetric gate-oxide thickness (T ox ) four-terminal (4T) FinFETs with HfO 2 [equivalentoxidethickness(EOT)=1.4 nm] for the drive gate and HfO 2 +thick SiO 2 (EOT=6.4-9.4 nm) for the V th -control gate have been successfully fabricated by utilizing ion-bombardment-enhanced etching process. Owing to the slightly thick V th -control gate oxide, the subthreshold slope (S) is significantly improved as compared to the symmetrically thin T ox 4T-FinFETs. As a result, the asymmetric T ox 4T-FinFETs gain higher I on than that for the symmetrically thin T ox 4T-FinFETs under the same I off conditions</description><subject>Applied sciences</subject><subject>Asymmetric gate-oxide thickness</subject><subject>Asymmetry</subject><subject>Circuit optimization</subject><subject>Electronics</subject><subject>Equivalence</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>FinFET</subject><subject>FinFETs</subject><subject>four-terminal (4T) FinFET</subject><subject>Gain</subject><subject>Gates</subject><subject>Hafnium oxide</subject><subject>Integrated circuit technology</subject><subject>ion-bombardment-enhanced etching (IBEE)</subject><subject>Microelectronics</subject><subject>Oxides</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Stability</subject><subject>subthreshold slope</subject><subject>Thickness control</subject><subject>Threshold voltage</subject><subject>threshold-voltage control</subject><subject>Transistors</subject><subject>Voltage control</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90b9vEzEUB3ALgUQozAwsFhIwXWqff53Hqm1SpEgdGlhPPt9z6-Kzg31B7c4fjqNURWJg8vA-7yvrfRF6T8mSUqJPN5cXy5YQtew0ZYS9QAsqRNcQIdlLtCCK04ZRIl-jN6XcE0I5V3yBfl_AlGKZs5l9ijg5fFYepwnm7C1emxma6wc_At7eefsjQil4lfa52UKefDQBr3xcXW4LvjK_fLzFqwAPfggHn6HcpTDi7ynM5hawiSNepzTim_0wP09vQtrBW_TKmVDg3dN7gr7V0POrZnO9_np-tmls_ezcjJpbNw7AR2cGAe3ArBaklY6MSqtOKwXWsQGMopo4QyUXjjnJqLaDVNawE_TlmLvL6eceytxPvlgIwURI-9LrVjLWMt1V-fm_knHetVyKCj_-A-_rfeplahptW6KVlhWdHpHNqZQMrt9lP5n82FPSH8rra3n9obz-WF7d-PQUa4o1wWUTrS9_1zohu07q6j4cnQeA5zGnlAsl2R_eVaOz</recordid><startdate>20070301</startdate><enddate>20070301</enddate><creator>Masahara, M.</creator><creator>Surdeanu, R.</creator><creator>Witters, L.</creator><creator>Doornbos, G.</creator><creator>Nguyen, V.H.</creator><creator>Van den bosch, G.</creator><creator>Vrancken, C.</creator><creator>Devriendt, K.</creator><creator>Neuilly, F.</creator><creator>Kunnen, E.</creator><creator>Jurczak, M.</creator><creator>Biesemans, S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20070301</creationdate><title>Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope</title><author>Masahara, M. ; Surdeanu, R. ; Witters, L. ; Doornbos, G. ; Nguyen, V.H. ; Van den bosch, G. ; Vrancken, C. ; Devriendt, K. ; Neuilly, F. ; Kunnen, E. ; Jurczak, M. ; Biesemans, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c447t-d94cfdbe4dfab5e2b3c95026f0d7978977ecf3bea7190fa1645f3f6319cb67ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Asymmetric gate-oxide thickness</topic><topic>Asymmetry</topic><topic>Circuit optimization</topic><topic>Electronics</topic><topic>Equivalence</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>FinFET</topic><topic>FinFETs</topic><topic>four-terminal (4T) FinFET</topic><topic>Gain</topic><topic>Gates</topic><topic>Hafnium oxide</topic><topic>Integrated circuit technology</topic><topic>ion-bombardment-enhanced etching (IBEE)</topic><topic>Microelectronics</topic><topic>Oxides</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stability</topic><topic>subthreshold slope</topic><topic>Thickness control</topic><topic>Threshold voltage</topic><topic>threshold-voltage control</topic><topic>Transistors</topic><topic>Voltage control</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Masahara, M.</creatorcontrib><creatorcontrib>Surdeanu, R.</creatorcontrib><creatorcontrib>Witters, L.</creatorcontrib><creatorcontrib>Doornbos, G.</creatorcontrib><creatorcontrib>Nguyen, V.H.</creatorcontrib><creatorcontrib>Van den bosch, G.</creatorcontrib><creatorcontrib>Vrancken, C.</creatorcontrib><creatorcontrib>Devriendt, K.</creatorcontrib><creatorcontrib>Neuilly, F.</creatorcontrib><creatorcontrib>Kunnen, E.</creatorcontrib><creatorcontrib>Jurczak, M.</creatorcontrib><creatorcontrib>Biesemans, S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Masahara, M.</au><au>Surdeanu, R.</au><au>Witters, L.</au><au>Doornbos, G.</au><au>Nguyen, V.H.</au><au>Van den bosch, G.</au><au>Vrancken, C.</au><au>Devriendt, K.</au><au>Neuilly, F.</au><au>Kunnen, E.</au><au>Jurczak, M.</au><au>Biesemans, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2007-03-01</date><risdate>2007</risdate><volume>28</volume><issue>3</issue><spage>217</spage><epage>219</epage><pages>217-219</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Flexibly controllable threshold-voltage (V th ) asymmetric gate-oxide thickness (T ox ) four-terminal (4T) FinFETs with HfO 2 [equivalentoxidethickness(EOT)=1.4 nm] for the drive gate and HfO 2 +thick SiO 2 (EOT=6.4-9.4 nm) for the V th -control gate have been successfully fabricated by utilizing ion-bombardment-enhanced etching process. Owing to the slightly thick V th -control gate oxide, the subthreshold slope (S) is significantly improved as compared to the symmetrically thin T ox 4T-FinFETs. As a result, the asymmetric T ox 4T-FinFETs gain higher I on than that for the symmetrically thin T ox 4T-FinFETs under the same I off conditions</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2007.891303</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 2007-03, Vol.28 (3), p.217-219 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Asymmetric gate-oxide thickness Asymmetry Circuit optimization Electronics Equivalence Etching Exact sciences and technology Fabrication FinFET FinFETs four-terminal (4T) FinFET Gain Gates Hafnium oxide Integrated circuit technology ion-bombardment-enhanced etching (IBEE) Microelectronics Oxides Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stability subthreshold slope Thickness control Threshold voltage threshold-voltage control Transistors Voltage control |
| title | Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope |
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