Oxide-Nitride Storage Dielectric Formation in a Single-Furnace Process for Trench DRAM

A simplified and integrated technique has been proposed to form an oxide/nitride storage dielectric in a single-furnace process by low-pressure oxidation and nitride film deposition with an extra N 2 O treatment for the trench dynamic random access memory (DRAM). Compared to the conventional nitride...

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Veröffentlicht in:	IEEE electron device letters 2006-09, Vol.27 (9), p.734-736
Hauptverfasser:	Yung-Hsien Wu, Chang, I., Chun-Yao Wang, Kao, T., Chia-Ming Kuo, Ku, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Degradation Design. Technologies. Operation analysis. Testing Dielectric properties Dielectrics DRAM chips Dynamic random access memory Electronics Equipment costs Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Investments Leakage current Life testing Nitrides Oxidation oxide/nitride (ON) stack Oxides Production Qualifications Random access memory Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices single-furnace process storage dielectric trench dynamic random access memory (DRAM) Trenches
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