Linear-kink-noise suppression in partially depleted SOI using the twin-gate MOSFET configuration

The impact of using a twin-gate (TG) configuration on the gate-induced excess Lorentzian noise in thin-gate partially depleted (PD) silicon-on-insulator (SOI) n-MOSFETs has been investigated and compared with the behavior in a single-gate (SG) device. A reduction by a factor 2 of the noise overshoot amplitude at a frequency of 10 Hz can be obtained in the TG case, which is related to a similar reduction of the plateau amplitude of the Lorentzian noise component. It is shown that this decrease is generated by a lowering of the body-effect factor /spl gamma//sub B/ due to the presence of the inner floating n/sup +/ contact. It is believed that there, recombination of the injected holes takes place, thereby pinning the channel potential.