Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film
Sputter-deposited Cr-doped SrZrO/sub 3/-based metal-insulator-metal structures exhibited bistable resistive reversible switching as observed under bias voltage and voltage pulse. The ratio of resistance of the two leakage states (high-H, low-L) was about five orders of magnitude. The conduction of t...
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| Veröffentlicht in: | IEEE electron device letters 2005-06, Vol.26 (6), p.351-353 |
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| container_title | IEEE electron device letters |
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| creator | Chih-Yi Liu Pei-Hsun Wu Wang, A. Wen-Yueh Jang Jien-Chen Young Kuang-Yi Chiu Tseung-Yuen Tseng |
| description | Sputter-deposited Cr-doped SrZrO/sub 3/-based metal-insulator-metal structures exhibited bistable resistive reversible switching as observed under bias voltage and voltage pulse. The ratio of resistance of the two leakage states (high-H, low-L) was about five orders of magnitude. The conduction of the L-state satisfied Frenkel-Poole emission and that of the H-state followed ohmic mechanism, causing the resistance ratio to decrease with increasing bias voltage. The transition time of H- to L-state was five orders of magnitude higher than that of L- to H-state. The transition from H- to L-state was the restricted part for reversible switching operation. The difference in transition time of the two states should be related to the respective conduction mechanisms. |
| doi_str_mv | 10.1109/LED.2005.848073 |
| format | Article |
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The ratio of resistance of the two leakage states (high-H, low-L) was about five orders of magnitude. The conduction of the L-state satisfied Frenkel-Poole emission and that of the H-state followed ohmic mechanism, causing the resistance ratio to decrease with increasing bias voltage. The transition time of H- to L-state was five orders of magnitude higher than that of L- to H-state. The transition from H- to L-state was the restricted part for reversible switching operation. The difference in transition time of the two states should be related to the respective conduction mechanisms.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2005.848073</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Conducting materials ; Conduction mechanism ; Electrodes ; Insulation ; Leakage current ; Nonvolatile memory ; Radio frequency ; resistive switching memory ; Substrates ; Superconducting films ; Superconducting materials ; Voltage</subject><ispartof>IEEE electron device letters, 2005-06, Vol.26 (6), p.351-353</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2038-2db935948ad560b888fa11b2c498420d258659f7166dc3d07a7998f6f45ecdbd3</citedby><cites>FETCH-LOGICAL-c2038-2db935948ad560b888fa11b2c498420d258659f7166dc3d07a7998f6f45ecdbd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1432896$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1432896$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chih-Yi Liu</creatorcontrib><creatorcontrib>Pei-Hsun Wu</creatorcontrib><creatorcontrib>Wang, A.</creatorcontrib><creatorcontrib>Wen-Yueh Jang</creatorcontrib><creatorcontrib>Jien-Chen Young</creatorcontrib><creatorcontrib>Kuang-Yi Chiu</creatorcontrib><creatorcontrib>Tseung-Yuen Tseng</creatorcontrib><title>Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Sputter-deposited Cr-doped SrZrO/sub 3/-based metal-insulator-metal structures exhibited bistable resistive reversible switching as observed under bias voltage and voltage pulse. The ratio of resistance of the two leakage states (high-H, low-L) was about five orders of magnitude. The conduction of the L-state satisfied Frenkel-Poole emission and that of the H-state followed ohmic mechanism, causing the resistance ratio to decrease with increasing bias voltage. The transition time of H- to L-state was five orders of magnitude higher than that of L- to H-state. The transition from H- to L-state was the restricted part for reversible switching operation. The difference in transition time of the two states should be related to the respective conduction mechanisms.</description><subject>Conducting materials</subject><subject>Conduction mechanism</subject><subject>Electrodes</subject><subject>Insulation</subject><subject>Leakage current</subject><subject>Nonvolatile memory</subject><subject>Radio frequency</subject><subject>resistive switching memory</subject><subject>Substrates</subject><subject>Superconducting films</subject><subject>Superconducting materials</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpFkDtPwzAUhS0EEqUwM7B4Yktz_UrsEUp5SJU6QBcWy4ltMEpIsFNQ_z2pgsR0z5W-c4YPoUsCC0JA5evV3YICiIXkEkp2hGZECJmBKNgxmkHJScYIFKfoLKUPAMJ5yWdoexvSYKrG4ejSGMO3w-knDPV7-HzDnccGp343DC5m1vVdCoOzeDk-XT-G5_gaN3naVZjluHVtF_fYh6Y9RyfeNMld_N052t6vXpaP2Xrz8LS8WWc1BSYzaivFhOLSWFFAJaX0hpCK1lxJTsFSIQuhfEmKwtbMQmlKpaQvPBeutpVlc3Q97fax-9q5NOg2pNo1jfl03S5pOvLAlBzBfALr2KUUndd9DK2Je01AH_TpUZ8-6NOTvrFxNTWCc-6f5oxKVbBfrvtq1g</recordid><startdate>200506</startdate><enddate>200506</enddate><creator>Chih-Yi Liu</creator><creator>Pei-Hsun Wu</creator><creator>Wang, A.</creator><creator>Wen-Yueh Jang</creator><creator>Jien-Chen Young</creator><creator>Kuang-Yi Chiu</creator><creator>Tseung-Yuen Tseng</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200506</creationdate><title>Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film</title><author>Chih-Yi Liu ; Pei-Hsun Wu ; Wang, A. ; Wen-Yueh Jang ; Jien-Chen Young ; Kuang-Yi Chiu ; Tseung-Yuen Tseng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2038-2db935948ad560b888fa11b2c498420d258659f7166dc3d07a7998f6f45ecdbd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Conducting materials</topic><topic>Conduction mechanism</topic><topic>Electrodes</topic><topic>Insulation</topic><topic>Leakage current</topic><topic>Nonvolatile memory</topic><topic>Radio frequency</topic><topic>resistive switching memory</topic><topic>Substrates</topic><topic>Superconducting films</topic><topic>Superconducting materials</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chih-Yi Liu</creatorcontrib><creatorcontrib>Pei-Hsun Wu</creatorcontrib><creatorcontrib>Wang, A.</creatorcontrib><creatorcontrib>Wen-Yueh Jang</creatorcontrib><creatorcontrib>Jien-Chen Young</creatorcontrib><creatorcontrib>Kuang-Yi Chiu</creatorcontrib><creatorcontrib>Tseung-Yuen Tseng</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chih-Yi Liu</au><au>Pei-Hsun Wu</au><au>Wang, A.</au><au>Wen-Yueh Jang</au><au>Jien-Chen Young</au><au>Kuang-Yi Chiu</au><au>Tseung-Yuen Tseng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2005-06</date><risdate>2005</risdate><volume>26</volume><issue>6</issue><spage>351</spage><epage>353</epage><pages>351-353</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Sputter-deposited Cr-doped SrZrO/sub 3/-based metal-insulator-metal structures exhibited bistable resistive reversible switching as observed under bias voltage and voltage pulse. The ratio of resistance of the two leakage states (high-H, low-L) was about five orders of magnitude. The conduction of the L-state satisfied Frenkel-Poole emission and that of the H-state followed ohmic mechanism, causing the resistance ratio to decrease with increasing bias voltage. The transition time of H- to L-state was five orders of magnitude higher than that of L- to H-state. The transition from H- to L-state was the restricted part for reversible switching operation. The difference in transition time of the two states should be related to the respective conduction mechanisms.</abstract><pub>IEEE</pub><doi>10.1109/LED.2005.848073</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 2005-06, Vol.26 (6), p.351-353 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Conducting materials Conduction mechanism Electrodes Insulation Leakage current Nonvolatile memory Radio frequency resistive switching memory Substrates Superconducting films Superconducting materials Voltage |
| title | Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film |
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