CMOS-compatible micromachined edge-suspended spiral inductors with high Q-factors and self-resonance frequencies

This paper reports a new category of high-Q edge-suspended inductors (ESI) that are fabricated using CMOS-compatible micromachining techniques. This structure was designed based on the concept that the current was crowded at the edges of the conducting metal wires at high frequencies due to the prox...

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Veröffentlicht in:	IEEE electron device letters 2004-06, Vol.25 (6), p.363-365
Hauptverfasser:	Chen, K.J., Wai Cheong Hon, Jinwen Zhang, Leung, L.L.W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropy Biomembranes Categories Devices Dry etching Etching Frequency Inductors Micromachining Proximity effect Q factor Silicon Silicon substrates Spirals Wires
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