Implementation of Boolean Functions Using Tunnel Field-Effect Transistors

Tunnel field-effect transistors (TFETs) are being examined as a possible replacement of MOSFETs for digital applications. However, TFETs have small ON-state current and, typically, exhibit reduced speed compared with conventional MOSFETs. Nevertheless, TFETs have some distinct characteristics that c...

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Veröffentlicht in:	IEEE journal on exploratory solid-state computational devices and circuits 2020-12, Vol.6 (2), p.146-154
Hauptverfasser:	Garg, S., Saurabh, Sneh
Format:	Artikel
Sprache:	eng
Schlagworte:	Boolean Boolean algebra Boolean functions Double-gate FETs Double-gate tunnel field-effect transistor (FET) Field effect transistors independent gate control Integrated circuit modeling Logic functions Logic gates MOSFET MOSFETs on-state current to off-state current ratio Semiconductor devices TFETs Transistors Tunneling twin double-gate (TDG) structure two-variable Boolean functions
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