Temperature-Dependent Dielectric Response, Index of Refraction, and Absorption Coefficient of GeSn Films up to 8.4% Sn

Three Ge (1-x) Sn x films were measured by spectroscopic ellipsometry to extract their optical properties. The Sn contents of the films were 3.6%, 6.5%, and 8.4%, and all were fully strained to a Ge (001) substrate. Optical constants were collected from 0.39-4.116 eV, at temperatures between 78 K an...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2025-01, Vol.31 (1: SiGeSn Infrared Photon. and Quantum Electronics), p.1-5
Hauptverfasser:	Lemire, Amanda N., Grossklaus, Kevin A., Vandervelde, Thomas E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Ellipsometry Germanium germanium tin Optical device fabrication Optical diffraction Optical films Photonic band gap refractive index semiconductor epitaxial layers Strain Substrates Temperature distribution Temperature measurement
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