Research Progress of GeSn Photodetectors for Infrared Application

Silicon platform is the foundation of the modern information industry. Silicon-based semiconductor materials are compatible with the complementary metal-oxide semiconductor (CMOS) process of silicon, which can extend the application of silicon from electronic integrated circuit chips to optoelectron...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2025-01, Vol.31 (1: SiGeSn Infrared Photon. and Quantum Electronics), p.1-9
Hauptverfasser:	Zheng, Jun, Liu, Xiangquan, Cui, Jinlai, Huang, Qinxin, Liu, Zhi, Zuo, Yuhua, Cheng, Buwen
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS Crystal lattices Detectors Energy gap Germanium Germanium tin (GeSn) Infrared detectors Infrared imaging Integrated circuits Intermetallic compounds Molecular beam epitaxial growth Optical fiber communication Optical fibers Optical imaging Optoelectronic devices photodetector Pins Resonance Semiconductor materials Silicon silicon photonics Single crystals Substrates Tin
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