Beyond 110 GHz Uni-Traveling Carrier Photodiodes on an InP-Membrane-on-Silicon Platform
In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as \text{3}\times \text{2}\;\mu \text{m}^2 are successfully realize...
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| Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2022-03, Vol.28 (2: Optical Detectors), p.1-10 |
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| container_issue | 2: Optical Detectors |
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| container_title | IEEE journal of selected topics in quantum electronics |
| container_volume | 28 |
| creator | de Graaf, Jasper Zhao, Xinran Konstantinou, Dimitrios Hout, Menno van den Reniers, Sander Shen, Longfei van der Heide, Sjoerd Rommel, Simon Monroy, Idelfonso Tafur Okonkwo, Chigo Cao, Zizheng Koonen, Ton Williams, Kevin Jiao, Yuqing |
| description | In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as \text{3}\times \text{2}\;\mu \text{m}^2 are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 \Omega and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD. |
| doi_str_mv | 10.1109/JSTQE.2021.3110411 |
| format | Article |
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With design optimization and an improved process, devices as small as <inline-formula><tex-math notation="LaTeX"> \text{3}\times \text{2}\;\mu \text{m}^2</tex-math></inline-formula> are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 <inline-formula><tex-math notation="LaTeX">\Omega</tex-math></inline-formula> and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.]]></description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2021.3110411</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bandwidth ; Bandwidths ; Data transmission ; Design optimization ; Electronic devices ; Equivalent circuits ; High-speed optical techniques ; III-V semiconductor materials ; Indium phosphide ; Indium phosphides ; InP-membrane-on-silicon ; Membranes ; nanophotonic ; Optical device fabrication ; Optical variables measurement ; Photodiode (PD) ; Photodiodes ; Photoelectric effect ; Silicon ; uni-traveling-carrier photodiode (UTC-PD) ; waveguide integrated ; Waveguides</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2022-03, Vol.28 (2: Optical Detectors), p.1-10</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c388t-9f3419148bda1ec6013efd0aa8810039b50c0088fdeb031e6dd8404439cfe7653</citedby><cites>FETCH-LOGICAL-c388t-9f3419148bda1ec6013efd0aa8810039b50c0088fdeb031e6dd8404439cfe7653</cites><orcidid>0000-0002-4774-7545 ; 0000-0001-8892-1071 ; 0000-0001-5742-171X ; 0000-0002-2935-7682 ; 0000-0003-3655-4497 ; 0000-0003-2466-7961 ; 0000-0002-5716-6728 ; 0000-0001-8279-8180 ; 0000-0003-2757-8948 ; 0000-0002-6750-2625 ; 0000-0002-8928-995X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9531477$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54735</link.rule.ids></links><search><creatorcontrib>de Graaf, Jasper</creatorcontrib><creatorcontrib>Zhao, Xinran</creatorcontrib><creatorcontrib>Konstantinou, Dimitrios</creatorcontrib><creatorcontrib>Hout, Menno van den</creatorcontrib><creatorcontrib>Reniers, Sander</creatorcontrib><creatorcontrib>Shen, Longfei</creatorcontrib><creatorcontrib>van der Heide, Sjoerd</creatorcontrib><creatorcontrib>Rommel, Simon</creatorcontrib><creatorcontrib>Monroy, Idelfonso Tafur</creatorcontrib><creatorcontrib>Okonkwo, Chigo</creatorcontrib><creatorcontrib>Cao, Zizheng</creatorcontrib><creatorcontrib>Koonen, Ton</creatorcontrib><creatorcontrib>Williams, Kevin</creatorcontrib><creatorcontrib>Jiao, Yuqing</creatorcontrib><title>Beyond 110 GHz Uni-Traveling Carrier Photodiodes on an InP-Membrane-on-Silicon Platform</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description><![CDATA[In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as <inline-formula><tex-math notation="LaTeX"> \text{3}\times \text{2}\;\mu \text{m}^2</tex-math></inline-formula> are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 <inline-formula><tex-math notation="LaTeX">\Omega</tex-math></inline-formula> and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.]]></description><subject>Bandwidth</subject><subject>Bandwidths</subject><subject>Data transmission</subject><subject>Design optimization</subject><subject>Electronic devices</subject><subject>Equivalent circuits</subject><subject>High-speed optical techniques</subject><subject>III-V semiconductor materials</subject><subject>Indium phosphide</subject><subject>Indium phosphides</subject><subject>InP-membrane-on-silicon</subject><subject>Membranes</subject><subject>nanophotonic</subject><subject>Optical device fabrication</subject><subject>Optical variables measurement</subject><subject>Photodiode (PD)</subject><subject>Photodiodes</subject><subject>Photoelectric effect</subject><subject>Silicon</subject><subject>uni-traveling-carrier photodiode (UTC-PD)</subject><subject>waveguide integrated</subject><subject>Waveguides</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><recordid>eNo9kFFPwjAQgBejiYj-AX1p4nPxurZb96gEAYMRA0TflrLetGS02A0T_PUOIT7d5e6-u8sXRdcMeoxBdvc0m78OejHErMfbgmDsJOowKRUVUsSnbQ5pSuME3s-ji7peAYASCjrR2wPuvDOkhchw9EMWztJ50N9YWfdB-joEi4FMP33jjfUGa-Id0Y6M3ZQ-43oZtEPqHZ3ZyhZta1rppvRhfRmdlbqq8eoYu9HicTDvj-jkZTju309owZVqaFZywTIm1NJohkUCjGNpQGulGADPlhKK9lVVGlwCZ5gYowQIwbOixDSRvBvdHvZugv_aYt3kK78Nrj2ZxzJNpRSZSNqp-DBVBF_XAct8E-xah13OIN8LzP8E5nuB-VFgC90cIIuI_0AmORNpyn8BikFq0g</recordid><startdate>20220301</startdate><enddate>20220301</enddate><creator>de Graaf, Jasper</creator><creator>Zhao, Xinran</creator><creator>Konstantinou, Dimitrios</creator><creator>Hout, Menno van den</creator><creator>Reniers, Sander</creator><creator>Shen, Longfei</creator><creator>van der Heide, Sjoerd</creator><creator>Rommel, Simon</creator><creator>Monroy, Idelfonso Tafur</creator><creator>Okonkwo, Chigo</creator><creator>Cao, Zizheng</creator><creator>Koonen, Ton</creator><creator>Williams, Kevin</creator><creator>Jiao, Yuqing</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| identifier | ISSN: 1077-260X |
| ispartof | IEEE journal of selected topics in quantum electronics, 2022-03, Vol.28 (2: Optical Detectors), p.1-10 |
| issn | 1077-260X 1558-4542 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Bandwidth Bandwidths Data transmission Design optimization Electronic devices Equivalent circuits High-speed optical techniques III-V semiconductor materials Indium phosphide Indium phosphides InP-membrane-on-silicon Membranes nanophotonic Optical device fabrication Optical variables measurement Photodiode (PD) Photodiodes Photoelectric effect Silicon uni-traveling-carrier photodiode (UTC-PD) waveguide integrated Waveguides |
| title | Beyond 110 GHz Uni-Traveling Carrier Photodiodes on an InP-Membrane-on-Silicon Platform |
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