Hybrid MZI-SOA InGaAs/InP Photonic Integrated Switches

A low-power, high-performance integrated 4 × 4 hybrid Mach-Zehnder interferometer (MZI) semiconductor optical amplifier (SOA) optical switch is designed, fabricated, and characterized. The 4 mm × 6 mm device is fabricated using an active-passive integration scheme in an InGaAsP/InP foundry. MZIs are...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2018-01, Vol.24 (1), p.1-8
Hauptverfasser: Minsheng Ding, Wonfor, Adrian, Qixiang Cheng, Penty, Richard V., White, Ian H.
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container_title IEEE journal of selected topics in quantum electronics
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creator Minsheng Ding
Wonfor, Adrian
Qixiang Cheng
Penty, Richard V.
White, Ian H.
description A low-power, high-performance integrated 4 × 4 hybrid Mach-Zehnder interferometer (MZI) semiconductor optical amplifier (SOA) optical switch is designed, fabricated, and characterized. The 4 mm × 6 mm device is fabricated using an active-passive integration scheme in an InGaAsP/InP foundry. MZIs are implemented as the main switching elements and short switchable SOAs are used to either compensate the loss or suppress the crosstalk. A dilated Beneš architecture is implemented to reduce the crosstalk and offer rearrangeably nonblocking connections. The 4 × 4 switch exhibits a low 1.3-dB loss, a crosstalk ratio of -47 dB, and more than 13-dB input power dynamic range (IPDR) for a 0.5-dB power penalty at a 10-Gb/s signal rate. By active control of injection currents into the SOAs, a fixed output power is achieved for a 10-dB range of input power and the IPDR is extended by at least 4 dB. A 12-mA control current tolerance has been demonstrated for a 10-dB IPDR. The performance of a 16 × 16 switch is emulated by cascading two 4 × 4 chips. A record IPDR of 15 dB at a 1-dB penalty is achieved with a 0.6-dB power penalty floor.
doi_str_mv 10.1109/JSTQE.2017.2759278
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_JSTQE_2017_2759278</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8063924</ieee_id><sourcerecordid>1956423777</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-855850227ace68711b8b304f21e03287375f2dc1798f9628b07ea66a17c195543</originalsourceid><addsrcrecordid>eNo9kMFOwkAQhjdGExF9Ab008VyYnXZ3tkdCEGowYMDEeNlsy1ZKtMXdEsLbW4R4msnk_2YmH2P3HHqcQ9J_XixfRz0ETj0kkSCpC9bhQqgwFjFetj0QhSjh_ZrdeL8BABUr6DA5OWSuXAUvH2m4mA2CtBqbge-n1TyYr-umrsq8nTX205nGroLFvmzytfW37KowX97enWuXvT2NlsNJOJ2N0-FgGuaYiCZU7QcCEMnkViriPFNZBHGB3EKEiiISBa5yTokqEokqA7JGSsMp54kQcdRlj6e9W1f_7Kxv9Kbeuao9qduAjDEiojaFp1Tuau-dLfTWld_GHTQHffSj__zoox999tNCDyeotNb-AwpklGAc_QKR0V3Z</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1956423777</pqid></control><display><type>article</type><title>Hybrid MZI-SOA InGaAs/InP Photonic Integrated Switches</title><source>IEEE Electronic Library (IEL)</source><creator>Minsheng Ding ; Wonfor, Adrian ; Qixiang Cheng ; Penty, Richard V. ; White, Ian H.</creator><creatorcontrib>Minsheng Ding ; Wonfor, Adrian ; Qixiang Cheng ; Penty, Richard V. ; White, Ian H.</creatorcontrib><description>A low-power, high-performance integrated 4 × 4 hybrid Mach-Zehnder interferometer (MZI) semiconductor optical amplifier (SOA) optical switch is designed, fabricated, and characterized. The 4 mm × 6 mm device is fabricated using an active-passive integration scheme in an InGaAsP/InP foundry. MZIs are implemented as the main switching elements and short switchable SOAs are used to either compensate the loss or suppress the crosstalk. A dilated Beneš architecture is implemented to reduce the crosstalk and offer rearrangeably nonblocking connections. The 4 × 4 switch exhibits a low 1.3-dB loss, a crosstalk ratio of -47 dB, and more than 13-dB input power dynamic range (IPDR) for a 0.5-dB power penalty at a 10-Gb/s signal rate. By active control of injection currents into the SOAs, a fixed output power is achieved for a 10-dB range of input power and the IPDR is extended by at least 4 dB. A 12-mA control current tolerance has been demonstrated for a 10-dB IPDR. The performance of a 16 × 16 switch is emulated by cascading two 4 × 4 chips. A record IPDR of 15 dB at a 1-dB penalty is achieved with a 0.6-dB power penalty floor.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2017.2759278</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Active control ; Crosstalk ; Gallium indium arsenide phosphide ; indium compounds ; Integrated optics ; Optical crosstalk ; Optical device fabrication ; Optical losses ; Optical switches ; Optical switching ; Photonics ; Ports (Computers) ; Semiconductor optical amplifiers ; Switches</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2018-01, Vol.24 (1), p.1-8</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-855850227ace68711b8b304f21e03287375f2dc1798f9628b07ea66a17c195543</citedby><cites>FETCH-LOGICAL-c295t-855850227ace68711b8b304f21e03287375f2dc1798f9628b07ea66a17c195543</cites><orcidid>0000-0003-3597-9899 ; 0000-0001-8671-2102</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8063924$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8063924$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Minsheng Ding</creatorcontrib><creatorcontrib>Wonfor, Adrian</creatorcontrib><creatorcontrib>Qixiang Cheng</creatorcontrib><creatorcontrib>Penty, Richard V.</creatorcontrib><creatorcontrib>White, Ian H.</creatorcontrib><title>Hybrid MZI-SOA InGaAs/InP Photonic Integrated Switches</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>A low-power, high-performance integrated 4 × 4 hybrid Mach-Zehnder interferometer (MZI) semiconductor optical amplifier (SOA) optical switch is designed, fabricated, and characterized. The 4 mm × 6 mm device is fabricated using an active-passive integration scheme in an InGaAsP/InP foundry. MZIs are implemented as the main switching elements and short switchable SOAs are used to either compensate the loss or suppress the crosstalk. A dilated Beneš architecture is implemented to reduce the crosstalk and offer rearrangeably nonblocking connections. The 4 × 4 switch exhibits a low 1.3-dB loss, a crosstalk ratio of -47 dB, and more than 13-dB input power dynamic range (IPDR) for a 0.5-dB power penalty at a 10-Gb/s signal rate. By active control of injection currents into the SOAs, a fixed output power is achieved for a 10-dB range of input power and the IPDR is extended by at least 4 dB. A 12-mA control current tolerance has been demonstrated for a 10-dB IPDR. The performance of a 16 × 16 switch is emulated by cascading two 4 × 4 chips. A record IPDR of 15 dB at a 1-dB penalty is achieved with a 0.6-dB power penalty floor.</description><subject>Active control</subject><subject>Crosstalk</subject><subject>Gallium indium arsenide phosphide</subject><subject>indium compounds</subject><subject>Integrated optics</subject><subject>Optical crosstalk</subject><subject>Optical device fabrication</subject><subject>Optical losses</subject><subject>Optical switches</subject><subject>Optical switching</subject><subject>Photonics</subject><subject>Ports (Computers)</subject><subject>Semiconductor optical amplifiers</subject><subject>Switches</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMFOwkAQhjdGExF9Ab008VyYnXZ3tkdCEGowYMDEeNlsy1ZKtMXdEsLbW4R4msnk_2YmH2P3HHqcQ9J_XixfRz0ETj0kkSCpC9bhQqgwFjFetj0QhSjh_ZrdeL8BABUr6DA5OWSuXAUvH2m4mA2CtBqbge-n1TyYr-umrsq8nTX205nGroLFvmzytfW37KowX97enWuXvT2NlsNJOJ2N0-FgGuaYiCZU7QcCEMnkViriPFNZBHGB3EKEiiISBa5yTokqEokqA7JGSsMp54kQcdRlj6e9W1f_7Kxv9Kbeuao9qduAjDEiojaFp1Tuau-dLfTWld_GHTQHffSj__zoox999tNCDyeotNb-AwpklGAc_QKR0V3Z</recordid><startdate>201801</startdate><enddate>201801</enddate><creator>Minsheng Ding</creator><creator>Wonfor, Adrian</creator><creator>Qixiang Cheng</creator><creator>Penty, Richard V.</creator><creator>White, Ian H.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3597-9899</orcidid><orcidid>https://orcid.org/0000-0001-8671-2102</orcidid></search><sort><creationdate>201801</creationdate><title>Hybrid MZI-SOA InGaAs/InP Photonic Integrated Switches</title><author>Minsheng Ding ; Wonfor, Adrian ; Qixiang Cheng ; Penty, Richard V. ; White, Ian H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-855850227ace68711b8b304f21e03287375f2dc1798f9628b07ea66a17c195543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Active control</topic><topic>Crosstalk</topic><topic>Gallium indium arsenide phosphide</topic><topic>indium compounds</topic><topic>Integrated optics</topic><topic>Optical crosstalk</topic><topic>Optical device fabrication</topic><topic>Optical losses</topic><topic>Optical switches</topic><topic>Optical switching</topic><topic>Photonics</topic><topic>Ports (Computers)</topic><topic>Semiconductor optical amplifiers</topic><topic>Switches</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Minsheng Ding</creatorcontrib><creatorcontrib>Wonfor, Adrian</creatorcontrib><creatorcontrib>Qixiang Cheng</creatorcontrib><creatorcontrib>Penty, Richard V.</creatorcontrib><creatorcontrib>White, Ian H.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of selected topics in quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Minsheng Ding</au><au>Wonfor, Adrian</au><au>Qixiang Cheng</au><au>Penty, Richard V.</au><au>White, Ian H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hybrid MZI-SOA InGaAs/InP Photonic Integrated Switches</atitle><jtitle>IEEE journal of selected topics in quantum electronics</jtitle><stitle>JSTQE</stitle><date>2018-01</date><risdate>2018</risdate><volume>24</volume><issue>1</issue><spage>1</spage><epage>8</epage><pages>1-8</pages><issn>1077-260X</issn><eissn>1558-4542</eissn><coden>IJSQEN</coden><abstract>A low-power, high-performance integrated 4 × 4 hybrid Mach-Zehnder interferometer (MZI) semiconductor optical amplifier (SOA) optical switch is designed, fabricated, and characterized. The 4 mm × 6 mm device is fabricated using an active-passive integration scheme in an InGaAsP/InP foundry. MZIs are implemented as the main switching elements and short switchable SOAs are used to either compensate the loss or suppress the crosstalk. A dilated Beneš architecture is implemented to reduce the crosstalk and offer rearrangeably nonblocking connections. The 4 × 4 switch exhibits a low 1.3-dB loss, a crosstalk ratio of -47 dB, and more than 13-dB input power dynamic range (IPDR) for a 0.5-dB power penalty at a 10-Gb/s signal rate. By active control of injection currents into the SOAs, a fixed output power is achieved for a 10-dB range of input power and the IPDR is extended by at least 4 dB. A 12-mA control current tolerance has been demonstrated for a 10-dB IPDR. The performance of a 16 × 16 switch is emulated by cascading two 4 × 4 chips. A record IPDR of 15 dB at a 1-dB penalty is achieved with a 0.6-dB power penalty floor.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSTQE.2017.2759278</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-3597-9899</orcidid><orcidid>https://orcid.org/0000-0001-8671-2102</orcidid></addata></record>
fulltext fulltext_linktorsrc
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ispartof IEEE journal of selected topics in quantum electronics, 2018-01, Vol.24 (1), p.1-8
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1558-4542
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subjects Active control
Crosstalk
Gallium indium arsenide phosphide
indium compounds
Integrated optics
Optical crosstalk
Optical device fabrication
Optical losses
Optical switches
Optical switching
Photonics
Ports (Computers)
Semiconductor optical amplifiers
Switches
title Hybrid MZI-SOA InGaAs/InP Photonic Integrated Switches
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T03%3A14%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Hybrid%20MZI-SOA%20InGaAs/InP%20Photonic%20Integrated%20Switches&rft.jtitle=IEEE%20journal%20of%20selected%20topics%20in%20quantum%20electronics&rft.au=Minsheng%20Ding&rft.date=2018-01&rft.volume=24&rft.issue=1&rft.spage=1&rft.epage=8&rft.pages=1-8&rft.issn=1077-260X&rft.eissn=1558-4542&rft.coden=IJSQEN&rft_id=info:doi/10.1109/JSTQE.2017.2759278&rft_dat=%3Cproquest_RIE%3E1956423777%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1956423777&rft_id=info:pmid/&rft_ieee_id=8063924&rfr_iscdi=true