Hybrid MZI-SOA InGaAs/InP Photonic Integrated Switches
A low-power, high-performance integrated 4 × 4 hybrid Mach-Zehnder interferometer (MZI) semiconductor optical amplifier (SOA) optical switch is designed, fabricated, and characterized. The 4 mm × 6 mm device is fabricated using an active-passive integration scheme in an InGaAsP/InP foundry. MZIs are...
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Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2018-01, Vol.24 (1), p.1-8 |
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creator | Minsheng Ding Wonfor, Adrian Qixiang Cheng Penty, Richard V. White, Ian H. |
description | A low-power, high-performance integrated 4 × 4 hybrid Mach-Zehnder interferometer (MZI) semiconductor optical amplifier (SOA) optical switch is designed, fabricated, and characterized. The 4 mm × 6 mm device is fabricated using an active-passive integration scheme in an InGaAsP/InP foundry. MZIs are implemented as the main switching elements and short switchable SOAs are used to either compensate the loss or suppress the crosstalk. A dilated Beneš architecture is implemented to reduce the crosstalk and offer rearrangeably nonblocking connections. The 4 × 4 switch exhibits a low 1.3-dB loss, a crosstalk ratio of -47 dB, and more than 13-dB input power dynamic range (IPDR) for a 0.5-dB power penalty at a 10-Gb/s signal rate. By active control of injection currents into the SOAs, a fixed output power is achieved for a 10-dB range of input power and the IPDR is extended by at least 4 dB. A 12-mA control current tolerance has been demonstrated for a 10-dB IPDR. The performance of a 16 × 16 switch is emulated by cascading two 4 × 4 chips. A record IPDR of 15 dB at a 1-dB penalty is achieved with a 0.6-dB power penalty floor. |
doi_str_mv | 10.1109/JSTQE.2017.2759278 |
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The 4 mm × 6 mm device is fabricated using an active-passive integration scheme in an InGaAsP/InP foundry. MZIs are implemented as the main switching elements and short switchable SOAs are used to either compensate the loss or suppress the crosstalk. A dilated Beneš architecture is implemented to reduce the crosstalk and offer rearrangeably nonblocking connections. The 4 × 4 switch exhibits a low 1.3-dB loss, a crosstalk ratio of -47 dB, and more than 13-dB input power dynamic range (IPDR) for a 0.5-dB power penalty at a 10-Gb/s signal rate. By active control of injection currents into the SOAs, a fixed output power is achieved for a 10-dB range of input power and the IPDR is extended by at least 4 dB. A 12-mA control current tolerance has been demonstrated for a 10-dB IPDR. The performance of a 16 × 16 switch is emulated by cascading two 4 × 4 chips. A record IPDR of 15 dB at a 1-dB penalty is achieved with a 0.6-dB power penalty floor.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2017.2759278</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Active control ; Crosstalk ; Gallium indium arsenide phosphide ; indium compounds ; Integrated optics ; Optical crosstalk ; Optical device fabrication ; Optical losses ; Optical switches ; Optical switching ; Photonics ; Ports (Computers) ; Semiconductor optical amplifiers ; Switches</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2018-01, Vol.24 (1), p.1-8</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-855850227ace68711b8b304f21e03287375f2dc1798f9628b07ea66a17c195543</citedby><cites>FETCH-LOGICAL-c295t-855850227ace68711b8b304f21e03287375f2dc1798f9628b07ea66a17c195543</cites><orcidid>0000-0003-3597-9899 ; 0000-0001-8671-2102</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8063924$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8063924$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Minsheng Ding</creatorcontrib><creatorcontrib>Wonfor, Adrian</creatorcontrib><creatorcontrib>Qixiang Cheng</creatorcontrib><creatorcontrib>Penty, Richard V.</creatorcontrib><creatorcontrib>White, Ian H.</creatorcontrib><title>Hybrid MZI-SOA InGaAs/InP Photonic Integrated Switches</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>A low-power, high-performance integrated 4 × 4 hybrid Mach-Zehnder interferometer (MZI) semiconductor optical amplifier (SOA) optical switch is designed, fabricated, and characterized. The 4 mm × 6 mm device is fabricated using an active-passive integration scheme in an InGaAsP/InP foundry. MZIs are implemented as the main switching elements and short switchable SOAs are used to either compensate the loss or suppress the crosstalk. A dilated Beneš architecture is implemented to reduce the crosstalk and offer rearrangeably nonblocking connections. The 4 × 4 switch exhibits a low 1.3-dB loss, a crosstalk ratio of -47 dB, and more than 13-dB input power dynamic range (IPDR) for a 0.5-dB power penalty at a 10-Gb/s signal rate. By active control of injection currents into the SOAs, a fixed output power is achieved for a 10-dB range of input power and the IPDR is extended by at least 4 dB. A 12-mA control current tolerance has been demonstrated for a 10-dB IPDR. The performance of a 16 × 16 switch is emulated by cascading two 4 × 4 chips. A record IPDR of 15 dB at a 1-dB penalty is achieved with a 0.6-dB power penalty floor.</description><subject>Active control</subject><subject>Crosstalk</subject><subject>Gallium indium arsenide phosphide</subject><subject>indium compounds</subject><subject>Integrated optics</subject><subject>Optical crosstalk</subject><subject>Optical device fabrication</subject><subject>Optical losses</subject><subject>Optical switches</subject><subject>Optical switching</subject><subject>Photonics</subject><subject>Ports (Computers)</subject><subject>Semiconductor optical amplifiers</subject><subject>Switches</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMFOwkAQhjdGExF9Ab008VyYnXZ3tkdCEGowYMDEeNlsy1ZKtMXdEsLbW4R4msnk_2YmH2P3HHqcQ9J_XixfRz0ETj0kkSCpC9bhQqgwFjFetj0QhSjh_ZrdeL8BABUr6DA5OWSuXAUvH2m4mA2CtBqbge-n1TyYr-umrsq8nTX205nGroLFvmzytfW37KowX97enWuXvT2NlsNJOJ2N0-FgGuaYiCZU7QcCEMnkViriPFNZBHGB3EKEiiISBa5yTokqEokqA7JGSsMp54kQcdRlj6e9W1f_7Kxv9Kbeuao9qduAjDEiojaFp1Tuau-dLfTWld_GHTQHffSj__zoox999tNCDyeotNb-AwpklGAc_QKR0V3Z</recordid><startdate>201801</startdate><enddate>201801</enddate><creator>Minsheng Ding</creator><creator>Wonfor, Adrian</creator><creator>Qixiang Cheng</creator><creator>Penty, Richard V.</creator><creator>White, Ian H.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3597-9899</orcidid><orcidid>https://orcid.org/0000-0001-8671-2102</orcidid></search><sort><creationdate>201801</creationdate><title>Hybrid MZI-SOA InGaAs/InP Photonic Integrated Switches</title><author>Minsheng Ding ; Wonfor, Adrian ; Qixiang Cheng ; Penty, Richard V. ; White, Ian H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-855850227ace68711b8b304f21e03287375f2dc1798f9628b07ea66a17c195543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Active control</topic><topic>Crosstalk</topic><topic>Gallium indium arsenide phosphide</topic><topic>indium compounds</topic><topic>Integrated optics</topic><topic>Optical crosstalk</topic><topic>Optical device fabrication</topic><topic>Optical losses</topic><topic>Optical switches</topic><topic>Optical switching</topic><topic>Photonics</topic><topic>Ports (Computers)</topic><topic>Semiconductor optical amplifiers</topic><topic>Switches</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Minsheng Ding</creatorcontrib><creatorcontrib>Wonfor, Adrian</creatorcontrib><creatorcontrib>Qixiang Cheng</creatorcontrib><creatorcontrib>Penty, Richard V.</creatorcontrib><creatorcontrib>White, Ian H.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of selected topics in quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Minsheng Ding</au><au>Wonfor, Adrian</au><au>Qixiang Cheng</au><au>Penty, Richard V.</au><au>White, Ian H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hybrid MZI-SOA InGaAs/InP Photonic Integrated Switches</atitle><jtitle>IEEE journal of selected topics in quantum electronics</jtitle><stitle>JSTQE</stitle><date>2018-01</date><risdate>2018</risdate><volume>24</volume><issue>1</issue><spage>1</spage><epage>8</epage><pages>1-8</pages><issn>1077-260X</issn><eissn>1558-4542</eissn><coden>IJSQEN</coden><abstract>A low-power, high-performance integrated 4 × 4 hybrid Mach-Zehnder interferometer (MZI) semiconductor optical amplifier (SOA) optical switch is designed, fabricated, and characterized. The 4 mm × 6 mm device is fabricated using an active-passive integration scheme in an InGaAsP/InP foundry. MZIs are implemented as the main switching elements and short switchable SOAs are used to either compensate the loss or suppress the crosstalk. A dilated Beneš architecture is implemented to reduce the crosstalk and offer rearrangeably nonblocking connections. The 4 × 4 switch exhibits a low 1.3-dB loss, a crosstalk ratio of -47 dB, and more than 13-dB input power dynamic range (IPDR) for a 0.5-dB power penalty at a 10-Gb/s signal rate. By active control of injection currents into the SOAs, a fixed output power is achieved for a 10-dB range of input power and the IPDR is extended by at least 4 dB. A 12-mA control current tolerance has been demonstrated for a 10-dB IPDR. The performance of a 16 × 16 switch is emulated by cascading two 4 × 4 chips. A record IPDR of 15 dB at a 1-dB penalty is achieved with a 0.6-dB power penalty floor.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSTQE.2017.2759278</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-3597-9899</orcidid><orcidid>https://orcid.org/0000-0001-8671-2102</orcidid></addata></record> |
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subjects | Active control Crosstalk Gallium indium arsenide phosphide indium compounds Integrated optics Optical crosstalk Optical device fabrication Optical losses Optical switches Optical switching Photonics Ports (Computers) Semiconductor optical amplifiers Switches |
title | Hybrid MZI-SOA InGaAs/InP Photonic Integrated Switches |
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