High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate
To advance on-chip optical interconnections, membrane distributed-reflector (DR) lasers with low threshold current and high-efficiency operation at one side output were realized. First, a membrane distributed Bragg reflector (DBR) laser with 80-μm-long active section and 50-μm-long DBR section was f...
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| Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2017-11, Vol.23 (6), p.1-8 |
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| container_title | IEEE journal of selected topics in quantum electronics |
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| creator | Hiratani, Takuo Inoue, Daisuke Tomiyasu, Takahiro Fukuda, Kai Amemiya, Tomohiro Nishiyama, Nobuhiko Arai, Shigehisa |
| description | To advance on-chip optical interconnections, membrane distributed-reflector (DR) lasers with low threshold current and high-efficiency operation at one side output were realized. First, a membrane distributed Bragg reflector (DBR) laser with 80-μm-long active section and 50-μm-long DBR section was fabricated to clarify the DBR reflectivity. An external differential quantum efficiency of 35% for the output from the front facet was obtained, and the DBR reflectivity was estimated to be 75%. Next, a membrane DR laser with 61- μm-long distributed feedback section and 50-μm-long DBR section was fabricated. A threshold current of 0.48 mA, external differential quantum efficiency from the front side waveguide of 26%, and light output ratio from the front to the rear sides of 13 were obtained. The lasing spectrum showed a single-mode operation with a side-mode suppression-ratio (SMSR) of 40 dB. Finally, small-signal direct modulation was carried out and a modulation current efficiency factor of 7.9 GHz/mA 1/2 and 7 GHz/mA 1/2 were, respectively, obtained for the 30-μm-long and 61-μm-long devices. |
| doi_str_mv | 10.1109/JSTQE.2017.2704289 |
| format | Article |
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First, a membrane distributed Bragg reflector (DBR) laser with 80-μm-long active section and 50-μm-long DBR section was fabricated to clarify the DBR reflectivity. An external differential quantum efficiency of 35% for the output from the front facet was obtained, and the DBR reflectivity was estimated to be 75%. Next, a membrane DR laser with 61- μm-long distributed feedback section and 50-μm-long DBR section was fabricated. A threshold current of 0.48 mA, external differential quantum efficiency from the front side waveguide of 26%, and light output ratio from the front to the rear sides of 13 were obtained. The lasing spectrum showed a single-mode operation with a side-mode suppression-ratio (SMSR) of 40 dB. Finally, small-signal direct modulation was carried out and a modulation current efficiency factor of 7.9 GHz/mA 1/2 and 7 GHz/mA 1/2 were, respectively, obtained for the 30-μm-long and 61-μm-long devices.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2017.2704289</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>IEEE</publisher><subject>Distributed Bragg reflectors ; distributed-reflector laser ; Membrane laser ; Optical interconnections ; optical interconnects ; semiconductor laser ; Threshold current ; Vertical cavity surface emitting lasers ; Waveguide lasers</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2017-11, Vol.23 (6), p.1-8</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c470t-17ffd31dd672b11264c9bf2cb0e158f3cf39a376b5f43bbce1047088362f7c673</citedby><cites>FETCH-LOGICAL-c470t-17ffd31dd672b11264c9bf2cb0e158f3cf39a376b5f43bbce1047088362f7c673</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7929350$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids></links><search><creatorcontrib>Hiratani, Takuo</creatorcontrib><creatorcontrib>Inoue, Daisuke</creatorcontrib><creatorcontrib>Tomiyasu, Takahiro</creatorcontrib><creatorcontrib>Fukuda, Kai</creatorcontrib><creatorcontrib>Amemiya, Tomohiro</creatorcontrib><creatorcontrib>Nishiyama, Nobuhiko</creatorcontrib><creatorcontrib>Arai, Shigehisa</creatorcontrib><title>High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>To advance on-chip optical interconnections, membrane distributed-reflector (DR) lasers with low threshold current and high-efficiency operation at one side output were realized. First, a membrane distributed Bragg reflector (DBR) laser with 80-μm-long active section and 50-μm-long DBR section was fabricated to clarify the DBR reflectivity. An external differential quantum efficiency of 35% for the output from the front facet was obtained, and the DBR reflectivity was estimated to be 75%. Next, a membrane DR laser with 61- μm-long distributed feedback section and 50-μm-long DBR section was fabricated. A threshold current of 0.48 mA, external differential quantum efficiency from the front side waveguide of 26%, and light output ratio from the front to the rear sides of 13 were obtained. The lasing spectrum showed a single-mode operation with a side-mode suppression-ratio (SMSR) of 40 dB. Finally, small-signal direct modulation was carried out and a modulation current efficiency factor of 7.9 GHz/mA 1/2 and 7 GHz/mA 1/2 were, respectively, obtained for the 30-μm-long and 61-μm-long devices.</description><subject>Distributed Bragg reflectors</subject><subject>distributed-reflector laser</subject><subject>Membrane laser</subject><subject>Optical interconnections</subject><subject>optical interconnects</subject><subject>semiconductor laser</subject><subject>Threshold current</subject><subject>Vertical cavity surface emitting lasers</subject><subject>Waveguide lasers</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><recordid>eNo9kM1OAjEUhRujiYi-gG7mBYq3PzPtLA2iaMYQBaO7Sdu51RpgSDsseHsHIa7OWZzvLD5CrhmMGIPy9nm-eJ2MODA14gok1-UJGbA811Tmkp_2HZSivIDPc3KR0g8AaKlhQD6m4eubTrwPLuDa7bLZBqPpQrvOWp-94MpGs8bsPqQuBrvtsKFv6JfoujZmlUkYU9Zv52EZ3D63th-aDi_JmTfLhFfHHJL3h8liPKXV7PFpfFdRJxV0lCnvG8GaplDcMsYL6UrrubOALNdeOC9KI1Rhcy-FtQ4Z9JzWouBeuUKJIeGHXxfblCL6ehPDysRdzaDeq6n_1NR7NfVRTQ_dHKCAiP-AKnkpchC_QYxhOA</recordid><startdate>20171101</startdate><enddate>20171101</enddate><creator>Hiratani, Takuo</creator><creator>Inoue, Daisuke</creator><creator>Tomiyasu, Takahiro</creator><creator>Fukuda, Kai</creator><creator>Amemiya, Tomohiro</creator><creator>Nishiyama, Nobuhiko</creator><creator>Arai, Shigehisa</creator><general>IEEE</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20171101</creationdate><title>High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate</title><author>Hiratani, Takuo ; Inoue, Daisuke ; Tomiyasu, Takahiro ; Fukuda, Kai ; Amemiya, Tomohiro ; Nishiyama, Nobuhiko ; Arai, Shigehisa</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c470t-17ffd31dd672b11264c9bf2cb0e158f3cf39a376b5f43bbce1047088362f7c673</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Distributed Bragg reflectors</topic><topic>distributed-reflector laser</topic><topic>Membrane laser</topic><topic>Optical interconnections</topic><topic>optical interconnects</topic><topic>semiconductor laser</topic><topic>Threshold current</topic><topic>Vertical cavity surface emitting lasers</topic><topic>Waveguide lasers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hiratani, Takuo</creatorcontrib><creatorcontrib>Inoue, Daisuke</creatorcontrib><creatorcontrib>Tomiyasu, Takahiro</creatorcontrib><creatorcontrib>Fukuda, Kai</creatorcontrib><creatorcontrib>Amemiya, Tomohiro</creatorcontrib><creatorcontrib>Nishiyama, Nobuhiko</creatorcontrib><creatorcontrib>Arai, Shigehisa</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE journal of selected topics in quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hiratani, Takuo</au><au>Inoue, Daisuke</au><au>Tomiyasu, Takahiro</au><au>Fukuda, Kai</au><au>Amemiya, Tomohiro</au><au>Nishiyama, Nobuhiko</au><au>Arai, Shigehisa</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate</atitle><jtitle>IEEE journal of selected topics in quantum electronics</jtitle><stitle>JSTQE</stitle><date>2017-11-01</date><risdate>2017</risdate><volume>23</volume><issue>6</issue><spage>1</spage><epage>8</epage><pages>1-8</pages><issn>1077-260X</issn><eissn>1558-4542</eissn><coden>IJSQEN</coden><abstract>To advance on-chip optical interconnections, membrane distributed-reflector (DR) lasers with low threshold current and high-efficiency operation at one side output were realized. First, a membrane distributed Bragg reflector (DBR) laser with 80-μm-long active section and 50-μm-long DBR section was fabricated to clarify the DBR reflectivity. An external differential quantum efficiency of 35% for the output from the front facet was obtained, and the DBR reflectivity was estimated to be 75%. Next, a membrane DR laser with 61- μm-long distributed feedback section and 50-μm-long DBR section was fabricated. A threshold current of 0.48 mA, external differential quantum efficiency from the front side waveguide of 26%, and light output ratio from the front to the rear sides of 13 were obtained. The lasing spectrum showed a single-mode operation with a side-mode suppression-ratio (SMSR) of 40 dB. Finally, small-signal direct modulation was carried out and a modulation current efficiency factor of 7.9 GHz/mA 1/2 and 7 GHz/mA 1/2 were, respectively, obtained for the 30-μm-long and 61-μm-long devices.</abstract><pub>IEEE</pub><doi>10.1109/JSTQE.2017.2704289</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Distributed Bragg reflectors distributed-reflector laser Membrane laser Optical interconnections optical interconnects semiconductor laser Threshold current Vertical cavity surface emitting lasers Waveguide lasers |
| title | High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate |
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