1.30-/spl mu/m GaInNAs laser diode with lifetime over 1000 hours grown by MOCVD
We performed epitaxial growth of GaInNAs laser diodes under various growth rates by metal-organic chemical vapor deposition. A strong correlation was found between the growth rate and the photoluminescence (PL) characteristics. At the optimum growth rate, PL peak intensity and full-width at half-max...
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| Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2005-09, Vol.11 (5), p.1099-1102 |
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| container_title | IEEE journal of selected topics in quantum electronics |
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| creator | Mitomo, J. Yokozeki, M. Sato, Y. Hirano, Y. Hino, T. Narui, H. |
| description | We performed epitaxial growth of GaInNAs laser diodes under various growth rates by metal-organic chemical vapor deposition. A strong correlation was found between the growth rate and the photoluminescence (PL) characteristics. At the optimum growth rate, PL peak intensity and full-width at half-maximum of the PL peak were at a maximum and minimum, respectively. As a result of processing on a GaInNAs narrow-ridge waveguide laser device, a strong correlation was found between the growth rate and the device characteristics. At the optimum growth rate, which was the same optimum growth rate for the PL characteristics, the threshold current and characteristic temperature were also at their optimum values. It is clear that the growth rate is an important parameter for crystal quality and device characteristics. As a result of the optimization of the growth rate and the other growth conditions, a high characteristic temperature of 180 K and a long device lifetime over 1000 h were obtained. |
| doi_str_mv | 10.1109/JSTQE.2005.854150 |
| format | Article |
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A strong correlation was found between the growth rate and the photoluminescence (PL) characteristics. At the optimum growth rate, PL peak intensity and full-width at half-maximum of the PL peak were at a maximum and minimum, respectively. As a result of processing on a GaInNAs narrow-ridge waveguide laser device, a strong correlation was found between the growth rate and the device characteristics. At the optimum growth rate, which was the same optimum growth rate for the PL characteristics, the threshold current and characteristic temperature were also at their optimum values. It is clear that the growth rate is an important parameter for crystal quality and device characteristics. As a result of the optimization of the growth rate and the other growth conditions, a high characteristic temperature of 180 K and a long device lifetime over 1000 h were obtained.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2005.854150</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>IEEE</publisher><subject>1.3 ; Chemical lasers ; Chemical vapor deposition ; dilute nitride materials ; Diode lasers ; Fiber lasers ; GaInNAs ; lifetime ; metal-organic chemical vapor deposition (MOCVD) ; MOCVD ; Molecular beam epitaxial growth ; optical fiber telecommunications ; Optical materials ; Plasma temperature ; Semiconductor lasers ; Threshold current</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5), p.1099-1102</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c211t-6194bf325232edd7a5906ed7d7d45c152f0803d268e504c711dc36a3be6d6c4d3</citedby><cites>FETCH-LOGICAL-c211t-6194bf325232edd7a5906ed7d7d45c152f0803d268e504c711dc36a3be6d6c4d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1564047$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1564047$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mitomo, J.</creatorcontrib><creatorcontrib>Yokozeki, M.</creatorcontrib><creatorcontrib>Sato, Y.</creatorcontrib><creatorcontrib>Hirano, Y.</creatorcontrib><creatorcontrib>Hino, T.</creatorcontrib><creatorcontrib>Narui, H.</creatorcontrib><title>1.30-/spl mu/m GaInNAs laser diode with lifetime over 1000 hours grown by MOCVD</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>We performed epitaxial growth of GaInNAs laser diodes under various growth rates by metal-organic chemical vapor deposition. A strong correlation was found between the growth rate and the photoluminescence (PL) characteristics. At the optimum growth rate, PL peak intensity and full-width at half-maximum of the PL peak were at a maximum and minimum, respectively. As a result of processing on a GaInNAs narrow-ridge waveguide laser device, a strong correlation was found between the growth rate and the device characteristics. At the optimum growth rate, which was the same optimum growth rate for the PL characteristics, the threshold current and characteristic temperature were also at their optimum values. It is clear that the growth rate is an important parameter for crystal quality and device characteristics. As a result of the optimization of the growth rate and the other growth conditions, a high characteristic temperature of 180 K and a long device lifetime over 1000 h were obtained.</description><subject>1.3</subject><subject>Chemical lasers</subject><subject>Chemical vapor deposition</subject><subject>dilute nitride materials</subject><subject>Diode lasers</subject><subject>Fiber lasers</subject><subject>GaInNAs</subject><subject>lifetime</subject><subject>metal-organic chemical vapor deposition (MOCVD)</subject><subject>MOCVD</subject><subject>Molecular beam epitaxial growth</subject><subject>optical fiber telecommunications</subject><subject>Optical materials</subject><subject>Plasma temperature</subject><subject>Semiconductor lasers</subject><subject>Threshold current</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpFkE1PwkAQhhujiYj-AONlT95aZvar5UgQEYMSIxpvm9KdSk1LcbeV8O-tYmLmMJPM876HJwguESJEGA7un5dPk4gDqChREhUcBT1UKgmlkvy4uyGOQ67h7TQ48_4DABKZQC9YYCQgHPhtyap2ULFpOts8jjwrU0-O2aK2xHZFs2ZlkVNTVMTqr-6BXQFb163z7N3Vuw1b7dnDYvx6cx6c5Gnp6eJv94OX28lyfBfOF9PZeDQPM47YhBqHcpULrrjgZG2cqiFosnE3UmWoeA4JCMt1QgpkFiPaTOhUrEhbnUkr-sH1oXfr6s-WfGOqwmdUlumG6tYbngAgF6oD8QBmrvbeUW62rqhStzcI5ked-VVnftSZg7ouc3XIFET0zystQcbiG7f0Z14</recordid><startdate>200509</startdate><enddate>200509</enddate><creator>Mitomo, J.</creator><creator>Yokozeki, M.</creator><creator>Sato, Y.</creator><creator>Hirano, Y.</creator><creator>Hino, T.</creator><creator>Narui, H.</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200509</creationdate><title>1.30-/spl mu/m GaInNAs laser diode with lifetime over 1000 hours grown by MOCVD</title><author>Mitomo, J. ; Yokozeki, M. ; Sato, Y. ; Hirano, Y. ; Hino, T. ; Narui, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c211t-6194bf325232edd7a5906ed7d7d45c152f0803d268e504c711dc36a3be6d6c4d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>1.3</topic><topic>Chemical lasers</topic><topic>Chemical vapor deposition</topic><topic>dilute nitride materials</topic><topic>Diode lasers</topic><topic>Fiber lasers</topic><topic>GaInNAs</topic><topic>lifetime</topic><topic>metal-organic chemical vapor deposition (MOCVD)</topic><topic>MOCVD</topic><topic>Molecular beam epitaxial growth</topic><topic>optical fiber telecommunications</topic><topic>Optical materials</topic><topic>Plasma temperature</topic><topic>Semiconductor lasers</topic><topic>Threshold current</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mitomo, J.</creatorcontrib><creatorcontrib>Yokozeki, M.</creatorcontrib><creatorcontrib>Sato, Y.</creatorcontrib><creatorcontrib>Hirano, Y.</creatorcontrib><creatorcontrib>Hino, T.</creatorcontrib><creatorcontrib>Narui, H.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of selected topics in quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mitomo, J.</au><au>Yokozeki, M.</au><au>Sato, Y.</au><au>Hirano, Y.</au><au>Hino, T.</au><au>Narui, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>1.30-/spl mu/m GaInNAs laser diode with lifetime over 1000 hours grown by MOCVD</atitle><jtitle>IEEE journal of selected topics in quantum electronics</jtitle><stitle>JSTQE</stitle><date>2005-09</date><risdate>2005</risdate><volume>11</volume><issue>5</issue><spage>1099</spage><epage>1102</epage><pages>1099-1102</pages><issn>1077-260X</issn><eissn>1558-4542</eissn><coden>IJSQEN</coden><abstract>We performed epitaxial growth of GaInNAs laser diodes under various growth rates by metal-organic chemical vapor deposition. A strong correlation was found between the growth rate and the photoluminescence (PL) characteristics. At the optimum growth rate, PL peak intensity and full-width at half-maximum of the PL peak were at a maximum and minimum, respectively. As a result of processing on a GaInNAs narrow-ridge waveguide laser device, a strong correlation was found between the growth rate and the device characteristics. At the optimum growth rate, which was the same optimum growth rate for the PL characteristics, the threshold current and characteristic temperature were also at their optimum values. It is clear that the growth rate is an important parameter for crystal quality and device characteristics. As a result of the optimization of the growth rate and the other growth conditions, a high characteristic temperature of 180 K and a long device lifetime over 1000 h were obtained.</abstract><pub>IEEE</pub><doi>10.1109/JSTQE.2005.854150</doi><tpages>4</tpages></addata></record> |
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| subjects | 1.3 Chemical lasers Chemical vapor deposition dilute nitride materials Diode lasers Fiber lasers GaInNAs lifetime metal-organic chemical vapor deposition (MOCVD) MOCVD Molecular beam epitaxial growth optical fiber telecommunications Optical materials Plasma temperature Semiconductor lasers Threshold current |
| title | 1.30-/spl mu/m GaInNAs laser diode with lifetime over 1000 hours grown by MOCVD |
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