A 3.96- \mu m, 124-dB Dynamic-Range, Digital-Pixel Sensor With Triple-and Single-Quantization Operations for Monochrome and Near-Infrared Dual-Channel Global Shutter Operation
This article presents a 3.96- \mu m, 640 \times 640 pixel stacked digital pixel sensor capable of capturing co-located monochrome (MONO) and near-infrared (NIR) frames simultaneously in a dual-channel global shutter (GS) operation. A super-pixel structure is proposed with diagonally arranged 2 \t...
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| creator | Miyauchi, Ken Uno, Masayuki Isozaki, Toshiyuki Fukuhara, Hideyuki Mori, Kazuya Abe, Hirofumi Nagamatsu, Masato Ikeno, Rimon Takayanagi, Isao Chen, Hsin-Li Lin, Chih-Hao Fu, Wen-Chien Wuu, Shou-Gwo Chen, Song Bainbridge, Lyle Chao, Qing Chilukuri, Ramakrishna Gao, Wei Hammond, Andrew P. Tsai, Tsung-Hsun Liu, Chiao |
| description | This article presents a 3.96- \mu m, 640 \times 640 pixel stacked digital pixel sensor capable of capturing co-located monochrome (MONO) and near-infrared (NIR) frames simultaneously in a dual-channel global shutter (GS) operation. A super-pixel structure is proposed with diagonally arranged 2 \times 2 MONO and NIR sub-pixels. To enhance visible light sensitivity, large and small non-uniform micro-lenses are formed on the MONO and NIR sub-pixels, respectively. Each floating diffusion (FD) shared super-pixel is connected to an in-pixel analog-to-digital converter and two banks of 10-bit static random access memories (SRAMs) to enable the dual-channel GS operation. To achieve high dynamic range (DR) in the MONO channel, a triple-quantization (3Q) operation is performed. Furthermore, a single-channel digital-correlated double sampling (D-CDS) 3Q operation is implemented. The fabricated sensor achieved 6.2-mW low power consumption at 30 frames/s with dual-channel capture. The MONO channel achieved 124-dB DR in the 3Q operation and 60 dB for the NIR channel. The sensor fits the stringent form-factor requirement of an augmented reality headset by consolidating MONO and NIR imaging capabilities. |
| doi_str_mv | 10.1109/JSSC.2024.3463688 |
| format | Article |
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A super-pixel structure is proposed with diagonally arranged 2 <inline-formula> <tex-math notation="LaTeX">\times</tex-math> </inline-formula> 2 MONO and NIR sub-pixels. To enhance visible light sensitivity, large and small non-uniform micro-lenses are formed on the MONO and NIR sub-pixels, respectively. Each floating diffusion (FD) shared super-pixel is connected to an in-pixel analog-to-digital converter and two banks of 10-bit static random access memories (SRAMs) to enable the dual-channel GS operation. To achieve high dynamic range (DR) in the MONO channel, a triple-quantization (3Q) operation is performed. Furthermore, a single-channel digital-correlated double sampling (D-CDS) 3Q operation is implemented. The fabricated sensor achieved 6.2-mW low power consumption at 30 frames/s with dual-channel capture. The MONO channel achieved 124-dB DR in the 3Q operation and 60 dB for the NIR channel. The sensor fits the stringent form-factor requirement of an augmented reality headset by consolidating MONO and NIR imaging capabilities.]]></description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2024.3463688</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>IEEE</publisher><subject>Complementary metal–oxide–semiconductor (CMOS) image sensor (CIS) ; digital pixel sensor (DPS) ; digital-correlated double sampling (D-CDS) ; Electric potential ; global shutter (GS) ; high dynamic range (HDR) ; low power ; MONOS devices ; near infrared (NIR) ; overflow ; Performance evaluation ; Power demand ; Random access memory ; Sensitivity ; Sensors ; stacked process ; Timing ; Transistors ; Turning</subject><ispartof>IEEE journal of solid-state circuits, 2024-10, p.1-11</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>Mori.Kazuya@brillnics.com ; Takayanagi.Isao@brillnics.com ; Miyauchi.Ken@brillnics.com ; Ikeno.Rimon@brillnics.com</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10706075$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids></links><search><creatorcontrib>Miyauchi, Ken</creatorcontrib><creatorcontrib>Uno, Masayuki</creatorcontrib><creatorcontrib>Isozaki, Toshiyuki</creatorcontrib><creatorcontrib>Fukuhara, Hideyuki</creatorcontrib><creatorcontrib>Mori, Kazuya</creatorcontrib><creatorcontrib>Abe, Hirofumi</creatorcontrib><creatorcontrib>Nagamatsu, Masato</creatorcontrib><creatorcontrib>Ikeno, Rimon</creatorcontrib><creatorcontrib>Takayanagi, Isao</creatorcontrib><creatorcontrib>Chen, Hsin-Li</creatorcontrib><creatorcontrib>Lin, Chih-Hao</creatorcontrib><creatorcontrib>Fu, Wen-Chien</creatorcontrib><creatorcontrib>Wuu, Shou-Gwo</creatorcontrib><creatorcontrib>Chen, Song</creatorcontrib><creatorcontrib>Bainbridge, Lyle</creatorcontrib><creatorcontrib>Chao, Qing</creatorcontrib><creatorcontrib>Chilukuri, Ramakrishna</creatorcontrib><creatorcontrib>Gao, Wei</creatorcontrib><creatorcontrib>Hammond, Andrew P.</creatorcontrib><creatorcontrib>Tsai, Tsung-Hsun</creatorcontrib><creatorcontrib>Liu, Chiao</creatorcontrib><title>A 3.96- \mu m, 124-dB Dynamic-Range, Digital-Pixel Sensor With Triple-and Single-Quantization Operations for Monochrome and Near-Infrared Dual-Channel Global Shutter Operation</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description><![CDATA[This article presents a 3.96-<inline-formula> <tex-math notation="LaTeX">\mu</tex-math> </inline-formula>m, 640 <inline-formula> <tex-math notation="LaTeX">\times</tex-math> </inline-formula> 640 pixel stacked digital pixel sensor capable of capturing co-located monochrome (MONO) and near-infrared (NIR) frames simultaneously in a dual-channel global shutter (GS) operation. A super-pixel structure is proposed with diagonally arranged 2 <inline-formula> <tex-math notation="LaTeX">\times</tex-math> </inline-formula> 2 MONO and NIR sub-pixels. To enhance visible light sensitivity, large and small non-uniform micro-lenses are formed on the MONO and NIR sub-pixels, respectively. Each floating diffusion (FD) shared super-pixel is connected to an in-pixel analog-to-digital converter and two banks of 10-bit static random access memories (SRAMs) to enable the dual-channel GS operation. To achieve high dynamic range (DR) in the MONO channel, a triple-quantization (3Q) operation is performed. Furthermore, a single-channel digital-correlated double sampling (D-CDS) 3Q operation is implemented. The fabricated sensor achieved 6.2-mW low power consumption at 30 frames/s with dual-channel capture. The MONO channel achieved 124-dB DR in the 3Q operation and 60 dB for the NIR channel. The sensor fits the stringent form-factor requirement of an augmented reality headset by consolidating MONO and NIR imaging capabilities.]]></description><subject>Complementary metal–oxide–semiconductor (CMOS) image sensor (CIS)</subject><subject>digital pixel sensor (DPS)</subject><subject>digital-correlated double sampling (D-CDS)</subject><subject>Electric potential</subject><subject>global shutter (GS)</subject><subject>high dynamic range (HDR)</subject><subject>low power</subject><subject>MONOS devices</subject><subject>near infrared (NIR)</subject><subject>overflow</subject><subject>Performance evaluation</subject><subject>Power demand</subject><subject>Random access memory</subject><subject>Sensitivity</subject><subject>Sensors</subject><subject>stacked process</subject><subject>Timing</subject><subject>Transistors</subject><subject>Turning</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><recordid>eNpNkNFOwjAUhhujiYg-gIkXfQCKp2u7dZcIihgUFYxemCxl7aBm60g3EvGlfEWHkOjV-U9yvv_P-RE6p9ClFOLLu-m03w0g4F3GQxZKeYBaVAhJaMTeDlELgEoSBwDH6KSqPpqVc0lb6LuHWTcOCX4v1rjoYBpwoq_wYONUYVPyrNzCdPDALmytcvJoP02Op8ZVpcevtl7imber3BDlNJ5at2jk01q52n6p2pYOT1bG_6oKZw1yX7oyXfqyMHhLPBjlychlXnmj8WDdJPSXyrkmY5iXc9VELdd1bfyfzyk6ylRembP9bKOXm-tZ_5aMJ8NRvzcmKY1pTWIq5lxncfOmFhyE4kxonkkujASYz8EwIamOQaWhFkxwKTIV0UCAlhp0xNqI7nxTX1aVN1my8rZQfpNQSLaNJ9vGk23jyb7xhrnYMdYY8-8-ghAiwX4Ar3h9Dg</recordid><startdate>20241007</startdate><enddate>20241007</enddate><creator>Miyauchi, Ken</creator><creator>Uno, Masayuki</creator><creator>Isozaki, Toshiyuki</creator><creator>Fukuhara, Hideyuki</creator><creator>Mori, Kazuya</creator><creator>Abe, Hirofumi</creator><creator>Nagamatsu, Masato</creator><creator>Ikeno, Rimon</creator><creator>Takayanagi, Isao</creator><creator>Chen, Hsin-Li</creator><creator>Lin, Chih-Hao</creator><creator>Fu, Wen-Chien</creator><creator>Wuu, Shou-Gwo</creator><creator>Chen, Song</creator><creator>Bainbridge, Lyle</creator><creator>Chao, Qing</creator><creator>Chilukuri, Ramakrishna</creator><creator>Gao, Wei</creator><creator>Hammond, Andrew P.</creator><creator>Tsai, Tsung-Hsun</creator><creator>Liu, Chiao</creator><general>IEEE</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/Mori.Kazuya@brillnics.com</orcidid><orcidid>https://orcid.org/Takayanagi.Isao@brillnics.com</orcidid><orcidid>https://orcid.org/Miyauchi.Ken@brillnics.com</orcidid><orcidid>https://orcid.org/Ikeno.Rimon@brillnics.com</orcidid></search><sort><creationdate>20241007</creationdate><title>A 3.96- \mu m, 124-dB Dynamic-Range, Digital-Pixel Sensor With Triple-and Single-Quantization Operations for Monochrome and Near-Infrared Dual-Channel Global Shutter Operation</title><author>Miyauchi, Ken ; Uno, Masayuki ; Isozaki, Toshiyuki ; Fukuhara, Hideyuki ; Mori, Kazuya ; Abe, Hirofumi ; Nagamatsu, Masato ; Ikeno, Rimon ; Takayanagi, Isao ; Chen, Hsin-Li ; Lin, Chih-Hao ; Fu, Wen-Chien ; Wuu, Shou-Gwo ; Chen, Song ; Bainbridge, Lyle ; Chao, Qing ; Chilukuri, Ramakrishna ; Gao, Wei ; Hammond, Andrew P. ; Tsai, Tsung-Hsun ; Liu, Chiao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c191t-915b4df9014d5405a435d4f845e800bb0e3581d90ac6d535485fa71250d8d0d73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Complementary metal–oxide–semiconductor (CMOS) image sensor (CIS)</topic><topic>digital pixel sensor (DPS)</topic><topic>digital-correlated double sampling (D-CDS)</topic><topic>Electric potential</topic><topic>global shutter (GS)</topic><topic>high dynamic range (HDR)</topic><topic>low power</topic><topic>MONOS devices</topic><topic>near infrared (NIR)</topic><topic>overflow</topic><topic>Performance evaluation</topic><topic>Power demand</topic><topic>Random access memory</topic><topic>Sensitivity</topic><topic>Sensors</topic><topic>stacked process</topic><topic>Timing</topic><topic>Transistors</topic><topic>Turning</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Miyauchi, Ken</creatorcontrib><creatorcontrib>Uno, Masayuki</creatorcontrib><creatorcontrib>Isozaki, Toshiyuki</creatorcontrib><creatorcontrib>Fukuhara, Hideyuki</creatorcontrib><creatorcontrib>Mori, Kazuya</creatorcontrib><creatorcontrib>Abe, Hirofumi</creatorcontrib><creatorcontrib>Nagamatsu, Masato</creatorcontrib><creatorcontrib>Ikeno, Rimon</creatorcontrib><creatorcontrib>Takayanagi, Isao</creatorcontrib><creatorcontrib>Chen, Hsin-Li</creatorcontrib><creatorcontrib>Lin, Chih-Hao</creatorcontrib><creatorcontrib>Fu, Wen-Chien</creatorcontrib><creatorcontrib>Wuu, Shou-Gwo</creatorcontrib><creatorcontrib>Chen, Song</creatorcontrib><creatorcontrib>Bainbridge, Lyle</creatorcontrib><creatorcontrib>Chao, Qing</creatorcontrib><creatorcontrib>Chilukuri, Ramakrishna</creatorcontrib><creatorcontrib>Gao, Wei</creatorcontrib><creatorcontrib>Hammond, Andrew P.</creatorcontrib><creatorcontrib>Tsai, Tsung-Hsun</creatorcontrib><creatorcontrib>Liu, Chiao</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Miyauchi, Ken</au><au>Uno, Masayuki</au><au>Isozaki, Toshiyuki</au><au>Fukuhara, Hideyuki</au><au>Mori, Kazuya</au><au>Abe, Hirofumi</au><au>Nagamatsu, Masato</au><au>Ikeno, Rimon</au><au>Takayanagi, Isao</au><au>Chen, Hsin-Li</au><au>Lin, Chih-Hao</au><au>Fu, Wen-Chien</au><au>Wuu, Shou-Gwo</au><au>Chen, Song</au><au>Bainbridge, Lyle</au><au>Chao, Qing</au><au>Chilukuri, Ramakrishna</au><au>Gao, Wei</au><au>Hammond, Andrew P.</au><au>Tsai, Tsung-Hsun</au><au>Liu, Chiao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 3.96- \mu m, 124-dB Dynamic-Range, Digital-Pixel Sensor With Triple-and Single-Quantization Operations for Monochrome and Near-Infrared Dual-Channel Global Shutter Operation</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2024-10-07</date><risdate>2024</risdate><spage>1</spage><epage>11</epage><pages>1-11</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract><![CDATA[This article presents a 3.96-<inline-formula> <tex-math notation="LaTeX">\mu</tex-math> </inline-formula>m, 640 <inline-formula> <tex-math notation="LaTeX">\times</tex-math> </inline-formula> 640 pixel stacked digital pixel sensor capable of capturing co-located monochrome (MONO) and near-infrared (NIR) frames simultaneously in a dual-channel global shutter (GS) operation. A super-pixel structure is proposed with diagonally arranged 2 <inline-formula> <tex-math notation="LaTeX">\times</tex-math> </inline-formula> 2 MONO and NIR sub-pixels. To enhance visible light sensitivity, large and small non-uniform micro-lenses are formed on the MONO and NIR sub-pixels, respectively. Each floating diffusion (FD) shared super-pixel is connected to an in-pixel analog-to-digital converter and two banks of 10-bit static random access memories (SRAMs) to enable the dual-channel GS operation. To achieve high dynamic range (DR) in the MONO channel, a triple-quantization (3Q) operation is performed. Furthermore, a single-channel digital-correlated double sampling (D-CDS) 3Q operation is implemented. The fabricated sensor achieved 6.2-mW low power consumption at 30 frames/s with dual-channel capture. The MONO channel achieved 124-dB DR in the 3Q operation and 60 dB for the NIR channel. The sensor fits the stringent form-factor requirement of an augmented reality headset by consolidating MONO and NIR imaging capabilities.]]></abstract><pub>IEEE</pub><doi>10.1109/JSSC.2024.3463688</doi><tpages>11</tpages><orcidid>https://orcid.org/Mori.Kazuya@brillnics.com</orcidid><orcidid>https://orcid.org/Takayanagi.Isao@brillnics.com</orcidid><orcidid>https://orcid.org/Miyauchi.Ken@brillnics.com</orcidid><orcidid>https://orcid.org/Ikeno.Rimon@brillnics.com</orcidid><oa>free_for_read</oa></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Complementary metal–oxide–semiconductor (CMOS) image sensor (CIS) digital pixel sensor (DPS) digital-correlated double sampling (D-CDS) Electric potential global shutter (GS) high dynamic range (HDR) low power MONOS devices near infrared (NIR) overflow Performance evaluation Power demand Random access memory Sensitivity Sensors stacked process Timing Transistors Turning |
| title | A 3.96- \mu m, 124-dB Dynamic-Range, Digital-Pixel Sensor With Triple-and Single-Quantization Operations for Monochrome and Near-Infrared Dual-Channel Global Shutter Operation |
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