Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices
This study proposes a self-rectifying ferroelectric tunnel junction (SR-FTJ) crosspoint array to satisfy the stringent size requirements of the Internet-of-Things devices. Each cell in the SR-FTJ crosspoint array consists of two SR-FTJs stacked vertically, resulting in ultrahigh density. The SR-FTJ...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 2023-07, Vol.58 (7), p.1-11 |
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| container_title | IEEE journal of solid-state circuits |
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| creator | Lim, Sehee Goh, Youngin Lee, Young Kyu Ko, Dong Han Hwang, Junghyeon Jeong, Yeongseok Shin, Hunbeom Jeon, Sanghun Jung, Seong-Ook |
| description | This study proposes a self-rectifying ferroelectric tunnel junction (SR-FTJ) crosspoint array to satisfy the stringent size requirements of the Internet-of-Things devices. Each cell in the SR-FTJ crosspoint array consists of two SR-FTJs stacked vertically, resulting in ultrahigh density. The SR-FTJ crosspoint array can operate as: 1) ternary content-addressable memory (TCAM) or 2) binary content addressable memory (BCAM) or physically unclonable function (PUF) in the dual-mode operation. In the dual-mode operation, the amount of the current flowing through the SR-FTJs remains the same, resulting in a stable PUF response regardless of the BCAM data. The dual-mode operation of the SR-FTJ crosspoint array is experimentally verified by 4-in wafer-level demonstrations. HSPICE simulation results using the industrial-compatible 180-nm technology with the SR-FTJ model reflecting measured characteristics show that the SR-FTJ crosspoint array achieves the lowest search energy (2.05 fJ/search/bit) and the highest randomness (Hamming weight of 0.5000) among the previous content addressable memories (CAMs) and PUFs. In addition, the SR-FTJ crosspoint array reduces area by > 84.2% compared to the previous structures that implement individual CAM and PUF. |
| doi_str_mv | 10.1109/JSSC.2023.3265667 |
| format | Article |
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Each cell in the SR-FTJ crosspoint array consists of two SR-FTJs stacked vertically, resulting in ultrahigh density. The SR-FTJ crosspoint array can operate as: 1) ternary content-addressable memory (TCAM) or 2) binary content addressable memory (BCAM) or physically unclonable function (PUF) in the dual-mode operation. In the dual-mode operation, the amount of the current flowing through the SR-FTJs remains the same, resulting in a stable PUF response regardless of the BCAM data. The dual-mode operation of the SR-FTJ crosspoint array is experimentally verified by 4-in wafer-level demonstrations. HSPICE simulation results using the industrial-compatible 180-nm technology with the SR-FTJ model reflecting measured characteristics show that the SR-FTJ crosspoint array achieves the lowest search energy (2.05 fJ/search/bit) and the highest randomness (Hamming weight of 0.5000) among the previous content addressable memories (CAMs) and PUFs. In addition, the SR-FTJ crosspoint array reduces area by <inline-formula> <tex-math notation="LaTeX">></tex-math> </inline-formula>84.2% compared to the previous structures that implement individual CAM and PUF.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2023.3265667</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Area efficiency ; Arrays ; Associative memory ; content addressable memory (CAM) ; crosspoint array ; Density ; dual-mode operation ; Electrodes ; Ferroelectric materials ; Ferroelectricity ; Hysteresis ; Internet of Things ; Internet of Things (IoT) ; Junctions ; leakage current ; Optical switches ; physically unclonable function (PUF) ; self-rectifying ferroelectric tunnel junction (SR-FTJ) ; Tantalum ; Tunnel junctions</subject><ispartof>IEEE journal of solid-state circuits, 2023-07, Vol.58 (7), p.1-11</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c294t-cf2ce33d55ade3e889a0a597eaa7d91864ef85578e49cfb919600a905a96f59e3</citedby><cites>FETCH-LOGICAL-c294t-cf2ce33d55ade3e889a0a597eaa7d91864ef85578e49cfb919600a905a96f59e3</cites><orcidid>0000-0001-5751-7973 ; 0000-0003-0757-2581 ; 0000-0003-4772-2695 ; 0000-0002-2026-2097 ; 0000-0002-9028-4603 ; 0000-0002-7995-6640 ; 0000-0002-4222-1587 ; 0000-0003-0317-8210</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10103903$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10103903$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lim, Sehee</creatorcontrib><creatorcontrib>Goh, Youngin</creatorcontrib><creatorcontrib>Lee, Young Kyu</creatorcontrib><creatorcontrib>Ko, Dong Han</creatorcontrib><creatorcontrib>Hwang, Junghyeon</creatorcontrib><creatorcontrib>Jeong, Yeongseok</creatorcontrib><creatorcontrib>Shin, Hunbeom</creatorcontrib><creatorcontrib>Jeon, Sanghun</creatorcontrib><creatorcontrib>Jung, Seong-Ook</creatorcontrib><title>Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>This study proposes a self-rectifying ferroelectric tunnel junction (SR-FTJ) crosspoint array to satisfy the stringent size requirements of the Internet-of-Things devices. Each cell in the SR-FTJ crosspoint array consists of two SR-FTJs stacked vertically, resulting in ultrahigh density. The SR-FTJ crosspoint array can operate as: 1) ternary content-addressable memory (TCAM) or 2) binary content addressable memory (BCAM) or physically unclonable function (PUF) in the dual-mode operation. In the dual-mode operation, the amount of the current flowing through the SR-FTJs remains the same, resulting in a stable PUF response regardless of the BCAM data. The dual-mode operation of the SR-FTJ crosspoint array is experimentally verified by 4-in wafer-level demonstrations. HSPICE simulation results using the industrial-compatible 180-nm technology with the SR-FTJ model reflecting measured characteristics show that the SR-FTJ crosspoint array achieves the lowest search energy (2.05 fJ/search/bit) and the highest randomness (Hamming weight of 0.5000) among the previous content addressable memories (CAMs) and PUFs. In addition, the SR-FTJ crosspoint array reduces area by <inline-formula> <tex-math notation="LaTeX">></tex-math> </inline-formula>84.2% compared to the previous structures that implement individual CAM and PUF.</description><subject>Area efficiency</subject><subject>Arrays</subject><subject>Associative memory</subject><subject>content addressable memory (CAM)</subject><subject>crosspoint array</subject><subject>Density</subject><subject>dual-mode operation</subject><subject>Electrodes</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Hysteresis</subject><subject>Internet of Things</subject><subject>Internet of Things (IoT)</subject><subject>Junctions</subject><subject>leakage current</subject><subject>Optical switches</subject><subject>physically unclonable function (PUF)</subject><subject>self-rectifying ferroelectric tunnel junction (SR-FTJ)</subject><subject>Tantalum</subject><subject>Tunnel junctions</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkEFLAzEQhYMoWKs_QPAQ8Lw12Wx2k2NprW2pFGwFb0tMJzVlTWqyK-zVX-4u9eBpmOG9N7wPoVtKRpQS-bDcbCajlKRsxNKc53lxhgaUc5HQgr2dowEhVCQyJeQSXcV46NYsE3SAfqaNqpJnvwO8PkJQtfUuYm_wBiqTvICurWmt2-MZhOCh6g7BarxtnIMKLxuneweeBB_j0VtX43EIqsXGBzy3-49kCi7ausULV8P-lN_HL_wWT-HbaojX6MKoKsLN3xyi19njdjJPVuunxWS8SnQqszrRJtXA2I5ztQMGQkhFFJcFKFXsJBV5BkZwXgjIpDbvksqcECUJVzI3XAIbovtT7jH4rwZiXR58E1z3skwFIxnN0qLoVPSk0n2lAKY8BvupQltSUvaoyx512aMu_1B3nruTxwLAPz0lTBLGfgEntnxX</recordid><startdate>20230701</startdate><enddate>20230701</enddate><creator>Lim, Sehee</creator><creator>Goh, Youngin</creator><creator>Lee, Young Kyu</creator><creator>Ko, Dong Han</creator><creator>Hwang, Junghyeon</creator><creator>Jeong, Yeongseok</creator><creator>Shin, Hunbeom</creator><creator>Jeon, Sanghun</creator><creator>Jung, Seong-Ook</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Each cell in the SR-FTJ crosspoint array consists of two SR-FTJs stacked vertically, resulting in ultrahigh density. The SR-FTJ crosspoint array can operate as: 1) ternary content-addressable memory (TCAM) or 2) binary content addressable memory (BCAM) or physically unclonable function (PUF) in the dual-mode operation. In the dual-mode operation, the amount of the current flowing through the SR-FTJs remains the same, resulting in a stable PUF response regardless of the BCAM data. The dual-mode operation of the SR-FTJ crosspoint array is experimentally verified by 4-in wafer-level demonstrations. HSPICE simulation results using the industrial-compatible 180-nm technology with the SR-FTJ model reflecting measured characteristics show that the SR-FTJ crosspoint array achieves the lowest search energy (2.05 fJ/search/bit) and the highest randomness (Hamming weight of 0.5000) among the previous content addressable memories (CAMs) and PUFs. 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| ispartof | IEEE journal of solid-state circuits, 2023-07, Vol.58 (7), p.1-11 |
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| subjects | Area efficiency Arrays Associative memory content addressable memory (CAM) crosspoint array Density dual-mode operation Electrodes Ferroelectric materials Ferroelectricity Hysteresis Internet of Things Internet of Things (IoT) Junctions leakage current Optical switches physically unclonable function (PUF) self-rectifying ferroelectric tunnel junction (SR-FTJ) Tantalum Tunnel junctions |
| title | Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices |
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