A 24-29.5-GHz Highly Linear Phased-Array Transceiver Front-End in 65-nm CMOS Supporting 800-MHz 64-QAM and 400-MHz 256-QAM for 5G New Radio

This article presents a four-element phased-array transceiver (TRX) front-end for millimeter-wave (mm-Wave) 5G new radio (NR). The effects of amplitude-to-phase (AM-PM) and amplitude-to-amplitude (AM-AM) distortions on error vector magnitude (EVM) are detailed. A three-stage highly linear wideband c...

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Veröffentlicht in:IEEE journal of solid-state circuits 2022-09, Vol.57 (9), p.2702-2718
Hauptverfasser: Yi, Yongran, Zhao, Dixian, Zhang, Jiajun, Gu, Peng, Chai, Yuan, Liu, Huiqi, You, Xiaohu
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container_end_page 2718
container_issue 9
container_start_page 2702
container_title IEEE journal of solid-state circuits
container_volume 57
creator Yi, Yongran
Zhao, Dixian
Zhang, Jiajun
Gu, Peng
Chai, Yuan
Liu, Huiqi
You, Xiaohu
description This article presents a four-element phased-array transceiver (TRX) front-end for millimeter-wave (mm-Wave) 5G new radio (NR). The effects of amplitude-to-phase (AM-PM) and amplitude-to-amplitude (AM-AM) distortions on error vector magnitude (EVM) are detailed. A three-stage highly linear wideband class-AB power amplifier (PA) is described, mitigating AM-PM and AM-AM distortions without degrading other performances. A matching network embedded transmitting/receiving (T/R) switch is proposed to support time division duplex (TDD). With the proposed technique, RF switch insertion losses are reduced in both transmitter (TX) and receiving (RX) modes. In each TRX element, phase and gain controls are achieved by a 6-bit vector-modulated phase shifter (VMPS) with a phase tuning range of 360° and a 6-bit attenuator with a gain tuning range of 31.5 dB, respectively. Fabricated in 65-nm bulk CMOS, the proposed packaged TRX demonstrates the measured peak gains of 25.5/14.2 dB with the gain ripples of less than 2.5/1.9 dB across 24-29.5 GHz in the TX/RX mode. The measured peak P_{\text {1 dB}} is 17.6 dBm with a power added efficiency (PAE) of 20.4%. The measured minimum noise figure (NF) is 4.3 dB. The TRX achieves an output power of 7.9-8.9 dBm and an EVM of −25 dB with 8 \times 100-MHz 5G NR frequency range 2 (FR2) orthogonal frequency division multiplexing (OFDM) 64-quadrature amplitude modulation (QAM) signals across 24-29.5 GHz, covering 3rd generation partnership project (3GPP) 5G NR FR2 operating bands (i.e., n257, n258, and n261) around 26 GHz.
doi_str_mv 10.1109/JSSC.2022.3169588
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The effects of amplitude-to-phase (AM-PM) and amplitude-to-amplitude (AM-AM) distortions on error vector magnitude (EVM) are detailed. A three-stage highly linear wideband class-AB power amplifier (PA) is described, mitigating AM-PM and AM-AM distortions without degrading other performances. A matching network embedded transmitting/receiving (T/R) switch is proposed to support time division duplex (TDD). With the proposed technique, RF switch insertion losses are reduced in both transmitter (TX) and receiving (RX) modes. In each TRX element, phase and gain controls are achieved by a 6-bit vector-modulated phase shifter (VMPS) with a phase tuning range of 360° and a 6-bit attenuator with a gain tuning range of 31.5 dB, respectively. Fabricated in 65-nm bulk CMOS, the proposed packaged TRX demonstrates the measured peak gains of 25.5/14.2 dB with the gain ripples of less than 2.5/1.9 dB across 24-29.5 GHz in the TX/RX mode. 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The effects of amplitude-to-phase (AM-PM) and amplitude-to-amplitude (AM-AM) distortions on error vector magnitude (EVM) are detailed. A three-stage highly linear wideband class-AB power amplifier (PA) is described, mitigating AM-PM and AM-AM distortions without degrading other performances. A matching network embedded transmitting/receiving (T/R) switch is proposed to support time division duplex (TDD). With the proposed technique, RF switch insertion losses are reduced in both transmitter (TX) and receiving (RX) modes. In each TRX element, phase and gain controls are achieved by a 6-bit vector-modulated phase shifter (VMPS) with a phase tuning range of 360° and a 6-bit attenuator with a gain tuning range of 31.5 dB, respectively. Fabricated in 65-nm bulk CMOS, the proposed packaged TRX demonstrates the measured peak gains of 25.5/14.2 dB with the gain ripples of less than 2.5/1.9 dB across 24-29.5 GHz in the TX/RX mode. 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The effects of amplitude-to-phase (AM-PM) and amplitude-to-amplitude (AM-AM) distortions on error vector magnitude (EVM) are detailed. A three-stage highly linear wideband class-AB power amplifier (PA) is described, mitigating AM-PM and AM-AM distortions without degrading other performances. A matching network embedded transmitting/receiving (T/R) switch is proposed to support time division duplex (TDD). With the proposed technique, RF switch insertion losses are reduced in both transmitter (TX) and receiving (RX) modes. In each TRX element, phase and gain controls are achieved by a 6-bit vector-modulated phase shifter (VMPS) with a phase tuning range of 360° and a 6-bit attenuator with a gain tuning range of 31.5 dB, respectively. Fabricated in 65-nm bulk CMOS, the proposed packaged TRX demonstrates the measured peak gains of 25.5/14.2 dB with the gain ripples of less than 2.5/1.9 dB across 24-29.5 GHz in the TX/RX mode. The measured peak <inline-formula> <tex-math notation="LaTeX">P_{\text {1 dB}} </tex-math></inline-formula> is 17.6 dBm with a power added efficiency (PAE) of 20.4%. The measured minimum noise figure (NF) is 4.3 dB. The TRX achieves an output power of 7.9-8.9 dBm and an EVM of −25 dB with 8 <inline-formula> <tex-math notation="LaTeX">\times </tex-math></inline-formula> 100-MHz 5G NR frequency range 2 (FR2) orthogonal frequency division multiplexing (OFDM) 64-quadrature amplitude modulation (QAM) signals across 24-29.5 GHz, covering 3rd generation partnership project (3GPP) 5G NR FR2 operating bands (i.e., n257, n258, and n261) around 26 GHz.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSSC.2022.3169588</doi><tpages>17</tpages><orcidid>https://orcid.org/0000-0003-0349-9129</orcidid><orcidid>https://orcid.org/0000-0002-0809-8511</orcidid><orcidid>https://orcid.org/0000-0003-0753-9183</orcidid><orcidid>https://orcid.org/0000-0001-5228-5456</orcidid><orcidid>https://orcid.org/0000-0002-0736-0098</orcidid><orcidid>https://orcid.org/0000-0003-2263-105X</orcidid></addata></record>
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identifier ISSN: 0018-9200
ispartof IEEE journal of solid-state circuits, 2022-09, Vol.57 (9), p.2702-2718
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language eng
recordid cdi_crossref_primary_10_1109_JSSC_2022_3169588
source IEEE Electronic Library (IEL)
subjects 5G mobile communication
Amplitude-to-phase (AM–PM) distortion
Arrays
CMOS
error vector magnitude (EVM)
fifth generation (5G)
Frequency ranges
Gain
Insertion loss
Manganese
millimeter wave (mm-Wave)
Millimeter waves
Nonlinear distortion
Orthogonal Frequency Division Multiplexing
Phase distortion
Phase shifters
phased array
power amplifier (PA)
Power amplifiers
Quadrature amplitude modulation
Receiving
RF switch
Switches
Time division
transceiver (TRX)
Tuning
Wideband
title A 24-29.5-GHz Highly Linear Phased-Array Transceiver Front-End in 65-nm CMOS Supporting 800-MHz 64-QAM and 400-MHz 256-QAM for 5G New Radio
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