A 230-260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak G}} -Core

This paper proposes a wideband and high-gain amplifier design technique based on a dual-peak maximum achievable gain ( G_{\mathrm{ max}} ) core. The proposed technique achieves a power gain close to G_{\mathrm{ max}} at two frequencies simultaneously, thereby enabling the implementation of a wideb...

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Veröffentlicht in:	IEEE journal of solid-state circuits 2019-06, Vol.54 (6), p.1613-1623
Hauptverfasser:	Park, Dae-Woong, Utomo, Dzuhri Radityo, Lam, Bao Huu, Lee, Sang-Gug, Hong, Jong-Phil
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifier CMOS CMOS technology dual-peak Gain gain boosting maximum achievable gain (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">G ₘₐₓ) MOSFET Power dissipation terahertz (THz) Wideband
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