A 48-MHz Differential Crystal Oscillator With 168-fs Jitter in 28-nm CMOS
A 168-fs rms jitter, 48-MHz differential crystal oscillator based on a new active inductor biasing circuit achieves differential operation with low noise, power, and area overhead. This architecture has two significant advantages compared to the single-ended crystal oscillators that are normally use...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 2017-10, Vol.52 (10), p.2735-2745 |
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| container_end_page | 2745 |
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| container_issue | 10 |
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| container_title | IEEE journal of solid-state circuits |
| container_volume | 52 |
| creator | Rajavi, Yashar Ghahramani, Mohammad Mahdi Khalili, Alireza Kavousian, Amirpouya Beomsup Kim Flynn, Michael P. |
| description | A 168-fs rms jitter, 48-MHz differential crystal oscillator based on a new active inductor biasing circuit achieves differential operation with low noise, power, and area overhead. This architecture has two significant advantages compared to the single-ended crystal oscillators that are normally used: 1) this circuit rejects power supply noise and interference which leads to lower jitter and 2) the crystal oscillator-induced spurious tones are smaller and therefore less detrimental to sensitive blocks (e.g., LNA) in RF radios. This paper theoretically analyzes the differential crystal oscillator and provides detailed design considerations. A prototype requires half the power and 80% less area than previously reported differential crystal oscillators. Implemented in a 28-nm LP CMOS process, it draws 1.5 mA from a 1-V supply and occupies 0.013 mm 2 . |
| doi_str_mv | 10.1109/JSSC.2017.2728781 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_JSSC_2017_2728781</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8013679</ieee_id><sourcerecordid>1943295872</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-a0cdf68e76118f2cec0c4153f48b72aa044d31595561fd3082ad7e1bca1b41103</originalsourceid><addsrcrecordid>eNo9kE1LAzEQhoMoWKs_QLwEPG_NJNlN9ljWj7a09FBFbyHNJpiy3a1Jeqi_3i0tnl4GnneGeRC6BzICIOXTbLWqRpSAGFFBpZBwgQaQ5zIDwb4u0YAQkFlJCblGNzFu-pFzCQM0HWMus8XkFz9752ywbfK6wVU4xNTnMhrfNDp1AX_69I2hkJmLeOZTsgH7FlOZtVtcLZarW3TldBPt3TmH6OP15b2aZPPl27QazzNDS5YyTUztCmlFASAdNdYQwyFnjsu1oFoTzmsGeZnnBbiaEUl1LSysjYY1719lQ_R42rsL3c_exqQ23T60_UkFJWe0zKWgPQUnyoQuxmCd2gW_1eGggKijMXU0po7G1NlY33k4dby19p-XBFghSvYHuU9jvQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1943295872</pqid></control><display><type>article</type><title>A 48-MHz Differential Crystal Oscillator With 168-fs Jitter in 28-nm CMOS</title><source>IEEE Electronic Library (IEL)</source><creator>Rajavi, Yashar ; Ghahramani, Mohammad Mahdi ; Khalili, Alireza ; Kavousian, Amirpouya ; Beomsup Kim ; Flynn, Michael P.</creator><creatorcontrib>Rajavi, Yashar ; Ghahramani, Mohammad Mahdi ; Khalili, Alireza ; Kavousian, Amirpouya ; Beomsup Kim ; Flynn, Michael P.</creatorcontrib><description>A 168-fs rms jitter, 48-MHz differential crystal oscillator based on a new active inductor biasing circuit achieves differential operation with low noise, power, and area overhead. This architecture has two significant advantages compared to the single-ended crystal oscillators that are normally used: 1) this circuit rejects power supply noise and interference which leads to lower jitter and 2) the crystal oscillator-induced spurious tones are smaller and therefore less detrimental to sensitive blocks (e.g., LNA) in RF radios. This paper theoretically analyzes the differential crystal oscillator and provides detailed design considerations. A prototype requires half the power and 80% less area than previously reported differential crystal oscillators. Implemented in a 28-nm LP CMOS process, it draws 1.5 mA from a 1-V supply and occupies 0.013 mm 2 .</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2017.2728781</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Active inductors ; Capacitance ; Capacitors ; CMOS ; Crystal oscillators ; Crystals ; frequency generation ; Impedance ; jitter ; Low noise ; Oscillators ; Phase noise ; Power supplies ; Vibration</subject><ispartof>IEEE journal of solid-state circuits, 2017-10, Vol.52 (10), p.2735-2745</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-a0cdf68e76118f2cec0c4153f48b72aa044d31595561fd3082ad7e1bca1b41103</citedby><cites>FETCH-LOGICAL-c293t-a0cdf68e76118f2cec0c4153f48b72aa044d31595561fd3082ad7e1bca1b41103</cites><orcidid>0000-0002-4781-4883</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8013679$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8013679$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Rajavi, Yashar</creatorcontrib><creatorcontrib>Ghahramani, Mohammad Mahdi</creatorcontrib><creatorcontrib>Khalili, Alireza</creatorcontrib><creatorcontrib>Kavousian, Amirpouya</creatorcontrib><creatorcontrib>Beomsup Kim</creatorcontrib><creatorcontrib>Flynn, Michael P.</creatorcontrib><title>A 48-MHz Differential Crystal Oscillator With 168-fs Jitter in 28-nm CMOS</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>A 168-fs rms jitter, 48-MHz differential crystal oscillator based on a new active inductor biasing circuit achieves differential operation with low noise, power, and area overhead. This architecture has two significant advantages compared to the single-ended crystal oscillators that are normally used: 1) this circuit rejects power supply noise and interference which leads to lower jitter and 2) the crystal oscillator-induced spurious tones are smaller and therefore less detrimental to sensitive blocks (e.g., LNA) in RF radios. This paper theoretically analyzes the differential crystal oscillator and provides detailed design considerations. A prototype requires half the power and 80% less area than previously reported differential crystal oscillators. Implemented in a 28-nm LP CMOS process, it draws 1.5 mA from a 1-V supply and occupies 0.013 mm 2 .</description><subject>Active inductors</subject><subject>Capacitance</subject><subject>Capacitors</subject><subject>CMOS</subject><subject>Crystal oscillators</subject><subject>Crystals</subject><subject>frequency generation</subject><subject>Impedance</subject><subject>jitter</subject><subject>Low noise</subject><subject>Oscillators</subject><subject>Phase noise</subject><subject>Power supplies</subject><subject>Vibration</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWKs_QLwEPG_NJNlN9ljWj7a09FBFbyHNJpiy3a1Jeqi_3i0tnl4GnneGeRC6BzICIOXTbLWqRpSAGFFBpZBwgQaQ5zIDwb4u0YAQkFlJCblGNzFu-pFzCQM0HWMus8XkFz9752ywbfK6wVU4xNTnMhrfNDp1AX_69I2hkJmLeOZTsgH7FlOZtVtcLZarW3TldBPt3TmH6OP15b2aZPPl27QazzNDS5YyTUztCmlFASAdNdYQwyFnjsu1oFoTzmsGeZnnBbiaEUl1LSysjYY1719lQ_R42rsL3c_exqQ23T60_UkFJWe0zKWgPQUnyoQuxmCd2gW_1eGggKijMXU0po7G1NlY33k4dby19p-XBFghSvYHuU9jvQ</recordid><startdate>20171001</startdate><enddate>20171001</enddate><creator>Rajavi, Yashar</creator><creator>Ghahramani, Mohammad Mahdi</creator><creator>Khalili, Alireza</creator><creator>Kavousian, Amirpouya</creator><creator>Beomsup Kim</creator><creator>Flynn, Michael P.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-4781-4883</orcidid></search><sort><creationdate>20171001</creationdate><title>A 48-MHz Differential Crystal Oscillator With 168-fs Jitter in 28-nm CMOS</title><author>Rajavi, Yashar ; Ghahramani, Mohammad Mahdi ; Khalili, Alireza ; Kavousian, Amirpouya ; Beomsup Kim ; Flynn, Michael P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-a0cdf68e76118f2cec0c4153f48b72aa044d31595561fd3082ad7e1bca1b41103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Active inductors</topic><topic>Capacitance</topic><topic>Capacitors</topic><topic>CMOS</topic><topic>Crystal oscillators</topic><topic>Crystals</topic><topic>frequency generation</topic><topic>Impedance</topic><topic>jitter</topic><topic>Low noise</topic><topic>Oscillators</topic><topic>Phase noise</topic><topic>Power supplies</topic><topic>Vibration</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rajavi, Yashar</creatorcontrib><creatorcontrib>Ghahramani, Mohammad Mahdi</creatorcontrib><creatorcontrib>Khalili, Alireza</creatorcontrib><creatorcontrib>Kavousian, Amirpouya</creatorcontrib><creatorcontrib>Beomsup Kim</creatorcontrib><creatorcontrib>Flynn, Michael P.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rajavi, Yashar</au><au>Ghahramani, Mohammad Mahdi</au><au>Khalili, Alireza</au><au>Kavousian, Amirpouya</au><au>Beomsup Kim</au><au>Flynn, Michael P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 48-MHz Differential Crystal Oscillator With 168-fs Jitter in 28-nm CMOS</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2017-10-01</date><risdate>2017</risdate><volume>52</volume><issue>10</issue><spage>2735</spage><epage>2745</epage><pages>2735-2745</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A 168-fs rms jitter, 48-MHz differential crystal oscillator based on a new active inductor biasing circuit achieves differential operation with low noise, power, and area overhead. This architecture has two significant advantages compared to the single-ended crystal oscillators that are normally used: 1) this circuit rejects power supply noise and interference which leads to lower jitter and 2) the crystal oscillator-induced spurious tones are smaller and therefore less detrimental to sensitive blocks (e.g., LNA) in RF radios. This paper theoretically analyzes the differential crystal oscillator and provides detailed design considerations. A prototype requires half the power and 80% less area than previously reported differential crystal oscillators. Implemented in a 28-nm LP CMOS process, it draws 1.5 mA from a 1-V supply and occupies 0.013 mm 2 .</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSSC.2017.2728781</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0002-4781-4883</orcidid></addata></record> |
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| ispartof | IEEE journal of solid-state circuits, 2017-10, Vol.52 (10), p.2735-2745 |
| issn | 0018-9200 1558-173X |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Active inductors Capacitance Capacitors CMOS Crystal oscillators Crystals frequency generation Impedance jitter Low noise Oscillators Phase noise Power supplies Vibration |
| title | A 48-MHz Differential Crystal Oscillator With 168-fs Jitter in 28-nm CMOS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T06%3A11%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%2048-MHz%20Differential%20Crystal%20Oscillator%20With%20168-fs%20Jitter%20in%2028-nm%20CMOS&rft.jtitle=IEEE%20journal%20of%20solid-state%20circuits&rft.au=Rajavi,%20Yashar&rft.date=2017-10-01&rft.volume=52&rft.issue=10&rft.spage=2735&rft.epage=2745&rft.pages=2735-2745&rft.issn=0018-9200&rft.eissn=1558-173X&rft.coden=IJSCBC&rft_id=info:doi/10.1109/JSSC.2017.2728781&rft_dat=%3Cproquest_RIE%3E1943295872%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1943295872&rft_id=info:pmid/&rft_ieee_id=8013679&rfr_iscdi=true |