A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as shorter tPROG, lower power consumption and higher endurance. For many years, every effort has been made to shrink die size to lower cost and to improve performance. Howev...

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Veröffentlicht in:	IEEE journal of solid-state circuits 2016-01, Vol.51 (1), p.204-212
Hauptverfasser:	Jeong, Woopyo, Im, Jae-woo, Kim, Doo-Hyun, Nam, Sang-Wan, Shim, Dong-Kyo, Choi, Myung-Hoon, Yoon, Hyun-Jun, Kim, Dae-Han, Kim, You-Se, Park, Hyun-Wook, Kwak, Dong-Hun, Park, Sang-Won, Yoon, Seok-Min, Hahn, Wook-Ghee, Ryu, Jin-Ho, Shim, Sang-Won, Kang, Kyung-Tae, Ihm, Jeong-Don, Kim, In-Mo, Lee, Doo-Sub, Cho, Ji-Ho, Kim, Moo-Sung, Jang, Jae-Hoon, Hwang, Sang-Won, Byeon, Dae-Seok, Yang, Hyang-Ja, Park, Kitae, Kyung, Kye-Hyun, Choi, Jeong-Hyuk
Format:	Artikel
Sprache:	eng
Schlagworte:	1 Gb/s data rate 3D vertical-NAND flash Circuits Computer architecture Current measurement dynamic bandwidth control scheme Electrical resistance measurement Endurance Flash memories Flash memory (computers) good endurance high performance high speed program low energy Microprocessors Patterning Power consumption Programming read latency Resistance resistance monitor simple state selection Stacking Stacks Three dimensional WL overdrive
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