Low Distortion 50 GSamples/s Track-Hold and Sample-Hold Amplifiers

Low Distortion 50 GSamples/s Track-Hold and Sample-Hold Amplifiers

We report 50 GSamples/s track-hold amplifier (THA) and sample-hold amplifier (SHA) designed and fabricated in a 250 nm InP double heterojunction bipolar transistor (DHBT) technology. Because the base-emitter junction reverse breakdown voltage is low in the process technology employed, the circuits u...

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Veröffentlicht in:IEEE journal of solid-state circuits 2014-10, Vol.49 (10), p.2114-2126
Hauptverfasser: Daneshgar, Saeid, Griffith, Zach, Seo, Munkyo, Rodwell, Mark J. W.
Format: Artikel
Sprache:eng
Schlagworte:
Analog-to-digital converter (ADC)
DH-HEMTs
Indium phosphide
InP technology
Junctions
Nonlinear distortion
nonlinearity analysis
sample-hold amplifier (SHA)
Schottky diodes
Switches
track-hold amplifier (THA)
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Zusammenfassung:We report 50 GSamples/s track-hold amplifier (THA) and sample-hold amplifier (SHA) designed and fabricated in a 250 nm InP double heterojunction bipolar transistor (DHBT) technology. Because the base-emitter junction reverse breakdown voltage is low in the process technology employed, the circuits use a base-collector junction diode as the switching element in the signal path. Operating with -5 V and -2.5 V supplies, the THA achieves > +16 dBm input-referred third-order intercept (IIP3) at signal frequencies below 22 GHz, while the SHA achieves IIP3 > +17 dBm for 2-22 GHz inputs.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2014.2329843