A Class-G Switched-Capacitor RF Power Amplifier
A switched-capacitor power amplifier (SCPA) that realizes an envelope elimination and restoration/polar class-G topology is introduced. A novel voltage-tolerant switch enables the use of two power supply voltages which increases efficiency and output power simultaneously. Envelope digital-to-analog...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2013-05, Vol.48 (5), p.1212-1224 |
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container_title | IEEE journal of solid-state circuits |
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creator | Yoo, Sang-Min Walling, Jeffrey S. Degani, Ofir Jann, Benjamin Sadhwani, Ram Rudell, Jacques C. Allstot, David J. |
description | A switched-capacitor power amplifier (SCPA) that realizes an envelope elimination and restoration/polar class-G topology is introduced. A novel voltage-tolerant switch enables the use of two power supply voltages which increases efficiency and output power simultaneously. Envelope digital-to-analog conversion in the polar transmitter is achieved using an SC RF DAC that exhibits high efficiency at typical output power backoff levels. In addition, high linearity is achieved and no digital predistortion is required. Implemented in 65 nm CMOS, the measured peak output power and power-added efficiency (PAE) are 24.3 dBm and 43.5%, respectively, whereas when amplifying 802.11g 64-QAM OFDM signals, the average output power and PAE are 16.8 dBm and 33%, respectively. The measured EVM is 2.9%. |
doi_str_mv | 10.1109/JSSC.2013.2252754 |
format | Article |
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A novel voltage-tolerant switch enables the use of two power supply voltages which increases efficiency and output power simultaneously. Envelope digital-to-analog conversion in the polar transmitter is achieved using an SC RF DAC that exhibits high efficiency at typical output power backoff levels. In addition, high linearity is achieved and no digital predistortion is required. Implemented in 65 nm CMOS, the measured peak output power and power-added efficiency (PAE) are 24.3 dBm and 43.5%, respectively, whereas when amplifying 802.11g 64-QAM OFDM signals, the average output power and PAE are 16.8 dBm and 33%, respectively. The measured EVM is 2.9%.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2013.2252754</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Arrays ; Capacitors ; Circuit properties ; EER ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Envelope elimination and restoration ; Exact sciences and technology ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; polar transmitter ; power amplifier ; Power amplifiers ; Power generation ; Power supplies ; Radio frequency ; RF DAC ; SCPA ; switched-capacitor power amplifier ; Switches ; Switching, multiplexing, switched capacity circuits</subject><ispartof>IEEE journal of solid-state circuits, 2013-05, Vol.48 (5), p.1212-1224</ispartof><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-8dd14b5e25a38da0a360a0d29d3b864ed1332550ee00acb968e0440db422a9913</citedby><cites>FETCH-LOGICAL-c361t-8dd14b5e25a38da0a360a0d29d3b864ed1332550ee00acb968e0440db422a9913</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6506135$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,315,781,785,790,791,797,23932,23933,25142,27926,27927,54760</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6506135$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27368542$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Yoo, Sang-Min</creatorcontrib><creatorcontrib>Walling, Jeffrey S.</creatorcontrib><creatorcontrib>Degani, Ofir</creatorcontrib><creatorcontrib>Jann, Benjamin</creatorcontrib><creatorcontrib>Sadhwani, Ram</creatorcontrib><creatorcontrib>Rudell, Jacques C.</creatorcontrib><creatorcontrib>Allstot, David J.</creatorcontrib><title>A Class-G Switched-Capacitor RF Power Amplifier</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>A switched-capacitor power amplifier (SCPA) that realizes an envelope elimination and restoration/polar class-G topology is introduced. A novel voltage-tolerant switch enables the use of two power supply voltages which increases efficiency and output power simultaneously. Envelope digital-to-analog conversion in the polar transmitter is achieved using an SC RF DAC that exhibits high efficiency at typical output power backoff levels. In addition, high linearity is achieved and no digital predistortion is required. Implemented in 65 nm CMOS, the measured peak output power and power-added efficiency (PAE) are 24.3 dBm and 43.5%, respectively, whereas when amplifying 802.11g 64-QAM OFDM signals, the average output power and PAE are 16.8 dBm and 33%, respectively. The measured EVM is 2.9%.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Arrays</subject><subject>Capacitors</subject><subject>Circuit properties</subject><subject>EER</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Envelope elimination and restoration</subject><subject>Exact sciences and technology</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>polar transmitter</subject><subject>power amplifier</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Power supplies</subject><subject>Radio frequency</subject><subject>RF DAC</subject><subject>SCPA</subject><subject>switched-capacitor power amplifier</subject><subject>Switches</subject><subject>Switching, multiplexing, switched capacity circuits</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9j01LAzEURYMoWKs_QNzMxmXa9_LVzLIMtioFxSq4G94kGYxM7ZAUiv--LS1dPS7vnguHsXuEESKU49flshoJQDkSQouJVhdsgFpbjhP5fckGAGh5KQCu2U3Ov_uolMUBG0-LqqOc-bxYbuPG_QTPK-rJxc06FR-z4n29DamYrvoutjGkW3bVUpfD3ekO2dfs6bN65ou3-Us1XXAnDW649R5Vo4PQJK0nIGmAwIvSy8YaFTxKKbSGEADINaWxAZQC3yghqCxRDhked11a55xCW_cprij91wj1wbg-GNcH4_pkvGcej0xP2VHXJvpzMZ9BMZHGaiX2vYdjL4YQzm-jwaDUcgckTly1</recordid><startdate>20130501</startdate><enddate>20130501</enddate><creator>Yoo, Sang-Min</creator><creator>Walling, Jeffrey S.</creator><creator>Degani, Ofir</creator><creator>Jann, Benjamin</creator><creator>Sadhwani, Ram</creator><creator>Rudell, Jacques C.</creator><creator>Allstot, David J.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130501</creationdate><title>A Class-G Switched-Capacitor RF Power Amplifier</title><author>Yoo, Sang-Min ; Walling, Jeffrey S. ; Degani, Ofir ; Jann, Benjamin ; Sadhwani, Ram ; Rudell, Jacques C. ; Allstot, David J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-8dd14b5e25a38da0a360a0d29d3b864ed1332550ee00acb968e0440db422a9913</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Arrays</topic><topic>Capacitors</topic><topic>Circuit properties</topic><topic>EER</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Envelope elimination and restoration</topic><topic>Exact sciences and technology</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>polar transmitter</topic><topic>power amplifier</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Power supplies</topic><topic>Radio frequency</topic><topic>RF DAC</topic><topic>SCPA</topic><topic>switched-capacitor power amplifier</topic><topic>Switches</topic><topic>Switching, multiplexing, switched capacity circuits</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoo, Sang-Min</creatorcontrib><creatorcontrib>Walling, Jeffrey S.</creatorcontrib><creatorcontrib>Degani, Ofir</creatorcontrib><creatorcontrib>Jann, Benjamin</creatorcontrib><creatorcontrib>Sadhwani, Ram</creatorcontrib><creatorcontrib>Rudell, Jacques C.</creatorcontrib><creatorcontrib>Allstot, David J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yoo, Sang-Min</au><au>Walling, Jeffrey S.</au><au>Degani, Ofir</au><au>Jann, Benjamin</au><au>Sadhwani, Ram</au><au>Rudell, Jacques C.</au><au>Allstot, David J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Class-G Switched-Capacitor RF Power Amplifier</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2013-05-01</date><risdate>2013</risdate><volume>48</volume><issue>5</issue><spage>1212</spage><epage>1224</epage><pages>1212-1224</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A switched-capacitor power amplifier (SCPA) that realizes an envelope elimination and restoration/polar class-G topology is introduced. A novel voltage-tolerant switch enables the use of two power supply voltages which increases efficiency and output power simultaneously. Envelope digital-to-analog conversion in the polar transmitter is achieved using an SC RF DAC that exhibits high efficiency at typical output power backoff levels. In addition, high linearity is achieved and no digital predistortion is required. Implemented in 65 nm CMOS, the measured peak output power and power-added efficiency (PAE) are 24.3 dBm and 43.5%, respectively, whereas when amplifying 802.11g 64-QAM OFDM signals, the average output power and PAE are 16.8 dBm and 33%, respectively. The measured EVM is 2.9%.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.2013.2252754</doi><tpages>13</tpages></addata></record> |
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subjects | Amplifiers Applied sciences Arrays Capacitors Circuit properties EER Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Envelope elimination and restoration Exact sciences and technology Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits polar transmitter power amplifier Power amplifiers Power generation Power supplies Radio frequency RF DAC SCPA switched-capacitor power amplifier Switches Switching, multiplexing, switched capacity circuits |
title | A Class-G Switched-Capacitor RF Power Amplifier |
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