A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation
A broadband inductorless low-noise amplifier (LNA) design that utilizes simultaneous noise and distortion cancellation is presented. Concurrent cancellation of the intrinsic third-order distortion from individual stages is exhibited with the common-gate and common-source cascade. The LNA is then lim...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 2008-05, Vol.43 (5), p.1164-1176 |
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| container_title | IEEE journal of solid-state circuits |
| container_volume | 43 |
| creator | Wei-Hung Chen Gang Liu Zdravko, B. Niknejad, A.M. |
| description | A broadband inductorless low-noise amplifier (LNA) design that utilizes simultaneous noise and distortion cancellation is presented. Concurrent cancellation of the intrinsic third-order distortion from individual stages is exhibited with the common-gate and common-source cascade. The LNA is then limited by the second-order interaction between the common source and common gate stages, which is common in all cascade amplifiers. Further removal of this third-order distortion is achieved by incorporating a second-order-distortion-free circuit technique in the common gate stage. Implemented in 0.13 m CMOS technology, this LNA achieved 16 dBm in both the 900 MHz and 2 GHz bands. Measurements demonstrate that the LNA has a minimum internal gain of 14.5 dB, noise figure of 2.6 dB from 800 MHz to 2.1GHz while drawing 11.6 mA from 1.5 V supply voltage. |
| doi_str_mv | 10.1109/JSSC.2008.920335 |
| format | Article |
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Concurrent cancellation of the intrinsic third-order distortion from individual stages is exhibited with the common-gate and common-source cascade. The LNA is then limited by the second-order interaction between the common source and common gate stages, which is common in all cascade amplifiers. Further removal of this third-order distortion is achieved by incorporating a second-order-distortion-free circuit technique in the common gate stage. Implemented in 0.13 m CMOS technology, this LNA achieved 16 dBm in both the 900 MHz and 2 GHz bands. Measurements demonstrate that the LNA has a minimum internal gain of 14.5 dB, noise figure of 2.6 dB from 800 MHz to 2.1GHz while drawing 11.6 mA from 1.5 V supply voltage.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2008.920335</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Broadband ; Broadband amplifiers ; Broadband LNA ; Cancellation ; Circuit properties ; Circuits ; CMOS ; CMOS technology ; Design. Technologies. Operation analysis. Testing ; Distortion ; distortion cancellation ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Gates (circuits) ; Integrated circuits ; Linearity ; Low-noise amplifiers ; MOSFETs ; Narrowband ; Noise ; Noise cancellation ; Noise figure ; Noise levels ; Semiconductor device noise ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Voltage ; volterra series analysis</subject><ispartof>IEEE journal of solid-state circuits, 2008-05, Vol.43 (5), p.1164-1176</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c415t-f2448cb756a092377fda0e8961dadf7d80aa800533ba9c31deaa967089ac10e13</citedby><cites>FETCH-LOGICAL-c415t-f2448cb756a092377fda0e8961dadf7d80aa800533ba9c31deaa967089ac10e13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4494645$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,777,781,786,787,793,23911,23912,25121,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4494645$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20302784$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wei-Hung Chen</creatorcontrib><creatorcontrib>Gang Liu</creatorcontrib><creatorcontrib>Zdravko, B.</creatorcontrib><creatorcontrib>Niknejad, A.M.</creatorcontrib><title>A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>A broadband inductorless low-noise amplifier (LNA) design that utilizes simultaneous noise and distortion cancellation is presented. Concurrent cancellation of the intrinsic third-order distortion from individual stages is exhibited with the common-gate and common-source cascade. The LNA is then limited by the second-order interaction between the common source and common gate stages, which is common in all cascade amplifiers. Further removal of this third-order distortion is achieved by incorporating a second-order-distortion-free circuit technique in the common gate stage. Implemented in 0.13 m CMOS technology, this LNA achieved 16 dBm in both the 900 MHz and 2 GHz bands. Measurements demonstrate that the LNA has a minimum internal gain of 14.5 dB, noise figure of 2.6 dB from 800 MHz to 2.1GHz while drawing 11.6 mA from 1.5 V supply voltage.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Broadband</subject><subject>Broadband amplifiers</subject><subject>Broadband LNA</subject><subject>Cancellation</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Distortion</subject><subject>distortion cancellation</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gates (circuits)</subject><subject>Integrated circuits</subject><subject>Linearity</subject><subject>Low-noise amplifiers</subject><subject>MOSFETs</subject><subject>Narrowband</subject><subject>Noise</subject><subject>Noise cancellation</subject><subject>Noise figure</subject><subject>Noise levels</subject><subject>Semiconductor device noise</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Voltage</subject><subject>volterra series analysis</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkT1v2zAQhokiBeK43QN0EQKkmeQexQ-RY6o6SQs3GZwA3YizRLkMZNEl7cH_PpQdeMjQTIfD-9znS8g5hQmloL_9ms-rSQGgJroAxsQHMqJCqJyW7M8JGQFQlScFTslZjM8p5VzREbm_zu7c8m-3y2autxiy78Fjs8C-yarfD_NsloDpat35neuX2b130WaD-MPFjQ8b5_uswr62XYdD8ol8bLGL9vNrHJOnm-ljdZfPHm5_VtezvOZUbPK2SNPrRSkkgi5YWbYNglVa0gabtmwUICoAwdgCdc1oYxG1LEFprClYysbk6tB3Hfy_rY0bs3Jxv0Vv_TYaDUwWUkh4l1SlSO_STCXy639JxjmVag9evAGf_Tb06V6jaVFwDVIkCA5QHXyMwbZmHdwKw85QMINjZnDMDI6Zg2Op5PK1L8Yauzakx7p4rEsQFKXiifty4Jy19ihzrrnkgr0AvEKb9Q</recordid><startdate>20080501</startdate><enddate>20080501</enddate><creator>Wei-Hung Chen</creator><creator>Gang Liu</creator><creator>Zdravko, B.</creator><creator>Niknejad, A.M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20080501</creationdate><title>A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation</title><author>Wei-Hung Chen ; Gang Liu ; Zdravko, B. ; Niknejad, A.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c415t-f2448cb756a092377fda0e8961dadf7d80aa800533ba9c31deaa967089ac10e13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Broadband</topic><topic>Broadband amplifiers</topic><topic>Broadband LNA</topic><topic>Cancellation</topic><topic>Circuit properties</topic><topic>Circuits</topic><topic>CMOS</topic><topic>CMOS technology</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Distortion</topic><topic>distortion cancellation</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gates (circuits)</topic><topic>Integrated circuits</topic><topic>Linearity</topic><topic>Low-noise amplifiers</topic><topic>MOSFETs</topic><topic>Narrowband</topic><topic>Noise</topic><topic>Noise cancellation</topic><topic>Noise figure</topic><topic>Noise levels</topic><topic>Semiconductor device noise</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Voltage</topic><topic>volterra series analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wei-Hung Chen</creatorcontrib><creatorcontrib>Gang Liu</creatorcontrib><creatorcontrib>Zdravko, B.</creatorcontrib><creatorcontrib>Niknejad, A.M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wei-Hung Chen</au><au>Gang Liu</au><au>Zdravko, B.</au><au>Niknejad, A.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2008-05-01</date><risdate>2008</risdate><volume>43</volume><issue>5</issue><spage>1164</spage><epage>1176</epage><pages>1164-1176</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A broadband inductorless low-noise amplifier (LNA) design that utilizes simultaneous noise and distortion cancellation is presented. Concurrent cancellation of the intrinsic third-order distortion from individual stages is exhibited with the common-gate and common-source cascade. The LNA is then limited by the second-order interaction between the common source and common gate stages, which is common in all cascade amplifiers. Further removal of this third-order distortion is achieved by incorporating a second-order-distortion-free circuit technique in the common gate stage. Implemented in 0.13 m CMOS technology, this LNA achieved 16 dBm in both the 900 MHz and 2 GHz bands. Measurements demonstrate that the LNA has a minimum internal gain of 14.5 dB, noise figure of 2.6 dB from 800 MHz to 2.1GHz while drawing 11.6 mA from 1.5 V supply voltage.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.2008.920335</doi><tpages>13</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Amplifiers Applied sciences Broadband Broadband amplifiers Broadband LNA Cancellation Circuit properties Circuits CMOS CMOS technology Design. Technologies. Operation analysis. Testing Distortion distortion cancellation Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gates (circuits) Integrated circuits Linearity Low-noise amplifiers MOSFETs Narrowband Noise Noise cancellation Noise figure Noise levels Semiconductor device noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Voltage volterra series analysis |
| title | A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation |
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