A Micropower Interface ASIC for a Capacitive 3-Axis Micro-Accelerometer
In this paper, a micropower interface IC for a capacitive 3-axis micro-accelerometer implemented in a 0.13- BiCMOS process is presented. The sensor interface consists of a front-end that converts the acceleration signal to voltage, two algorithmic ADCs, two frequency references, and a voltage, curre...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 2007-12, Vol.42 (12), p.2651-2665 |
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| container_title | IEEE journal of solid-state circuits |
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| creator | Paavola, M. Kamarainen, M. Jarvinen, J.A.M. Saukoski, M. Laiho, M. Halonen, K.A.I. |
| description | In this paper, a micropower interface IC for a capacitive 3-axis micro-accelerometer implemented in a 0.13- BiCMOS process is presented. The sensor interface consists of a front-end that converts the acceleration signal to voltage, two algorithmic ADCs, two frequency references, and a voltage, current, and temperature reference circuit. Die area and power dissipation are reduced by using time-multiplexed sampling and varying duty cycles down to 0.3%. The chip with a 0.51 active area draws 62 from a 1.8 V supply while sampling temperature at 100 Hz, and four proof masses, each at 1.04 kHz. With a 4-g capacitive 3-axis accelerometer, the measured noise floors in the x-, y-, and z-directions are 482 , 639 , and 662 , respectively. |
| doi_str_mv | 10.1109/JSSC.2007.908764 |
| format | Article |
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The sensor interface consists of a front-end that converts the acceleration signal to voltage, two algorithmic ADCs, two frequency references, and a voltage, current, and temperature reference circuit. Die area and power dissipation are reduced by using time-multiplexed sampling and varying duty cycles down to 0.3%. The chip with a 0.51 active area draws 62 from a 1.8 V supply while sampling temperature at 100 Hz, and four proof masses, each at 1.04 kHz. With a 4-g capacitive 3-axis accelerometer, the measured noise floors in the x-, y-, and z-directions are 482 , 639 , and 662 , respectively.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2007.908764</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acceleration ; Accelerometers ; Algorithms ; Application specific integrated circuits ; Applied sciences ; BiCMOS integrated circuits ; Capacitive sensor interface circuit ; Circuit properties ; Circuits ; Dielectric, amorphous and glass solid devices ; Electric potential ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Frequency conversion ; low-power circuit ; Micro- and nanoelectromechanical devices (mems/nems) ; microelectromechanical system (MEMS) ; Oscillators, resonators, synthetizers ; Power dissipation ; Sampling ; Sampling methods ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Signal convertors ; Signal sampling ; switched-capacitor circuit ; Temperature sensors ; three-axis accelerometer ; time multiplexing ; Voltage ; Yttrium</subject><ispartof>IEEE journal of solid-state circuits, 2007-12, Vol.42 (12), p.2651-2665</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c415t-55fdd40cbb0e22fdd08662cd73e708a0e038b02c2a1103c5caf1fe84b4becd2f3</citedby><cites>FETCH-LOGICAL-c415t-55fdd40cbb0e22fdd08662cd73e708a0e038b02c2a1103c5caf1fe84b4becd2f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4381459$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,315,781,785,790,791,797,23935,23936,25145,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4381459$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19942552$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Paavola, M.</creatorcontrib><creatorcontrib>Kamarainen, M.</creatorcontrib><creatorcontrib>Jarvinen, J.A.M.</creatorcontrib><creatorcontrib>Saukoski, M.</creatorcontrib><creatorcontrib>Laiho, M.</creatorcontrib><creatorcontrib>Halonen, K.A.I.</creatorcontrib><title>A Micropower Interface ASIC for a Capacitive 3-Axis Micro-Accelerometer</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>In this paper, a micropower interface IC for a capacitive 3-axis micro-accelerometer implemented in a 0.13- BiCMOS process is presented. The sensor interface consists of a front-end that converts the acceleration signal to voltage, two algorithmic ADCs, two frequency references, and a voltage, current, and temperature reference circuit. Die area and power dissipation are reduced by using time-multiplexed sampling and varying duty cycles down to 0.3%. The chip with a 0.51 active area draws 62 from a 1.8 V supply while sampling temperature at 100 Hz, and four proof masses, each at 1.04 kHz. With a 4-g capacitive 3-axis accelerometer, the measured noise floors in the x-, y-, and z-directions are 482 , 639 , and 662 , respectively.</description><subject>Acceleration</subject><subject>Accelerometers</subject><subject>Algorithms</subject><subject>Application specific integrated circuits</subject><subject>Applied sciences</subject><subject>BiCMOS integrated circuits</subject><subject>Capacitive sensor interface circuit</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>Dielectric, amorphous and glass solid devices</subject><subject>Electric potential</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency conversion</subject><subject>low-power circuit</subject><subject>Micro- and nanoelectromechanical devices (mems/nems)</subject><subject>microelectromechanical system (MEMS)</subject><subject>Oscillators, resonators, synthetizers</subject><subject>Power dissipation</subject><subject>Sampling</subject><subject>Sampling methods</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Signal convertors</subject><subject>Signal sampling</subject><subject>switched-capacitor circuit</subject><subject>Temperature sensors</subject><subject>three-axis accelerometer</subject><subject>time multiplexing</subject><subject>Voltage</subject><subject>Yttrium</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkU1Lw0AQhhdRsFbvgpcgqKfU2a9kcwxBa6XioQrels12FlLapu62fvx7t6QoeNDTzDDPO8zMS8gphQGlUFzfTybVgAHkgwJUnok90qNSqpTm_GWf9ACoSovYPyRHIcxiKYSiPTIsk4fG-nbVvqNPRss1emcsJuVkVCWu9YlJKrMytlk3b5jwtPxoQqdIS2txjr5dYBQdkwNn5gFPdrFPnm9vnqq7dPw4HFXlOLWCynUqpZtOBdi6BmQs5qCyjNlpzjEHZQCBqxqYZSYexa20xlGHStSiRjtljvfJVTd35dvXDYa1XjQh7jE3S2w3QRfAMyYUz_8llYIsAymySF7-SXIhQEm2Bc9_gbN245fxXl1QRnMh49J9Ah0UfxSCR6dXvlkY_6kp6K1VemuV3lqlO6ui5GI31wRr5s6bpW3Cj64oBJOSRe6s4xpE_G4LrqiQBf8C1AWaNw</recordid><startdate>20071201</startdate><enddate>20071201</enddate><creator>Paavola, M.</creator><creator>Kamarainen, M.</creator><creator>Jarvinen, J.A.M.</creator><creator>Saukoski, M.</creator><creator>Laiho, M.</creator><creator>Halonen, K.A.I.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20071201</creationdate><title>A Micropower Interface ASIC for a Capacitive 3-Axis Micro-Accelerometer</title><author>Paavola, M. ; Kamarainen, M. ; Jarvinen, J.A.M. ; Saukoski, M. ; Laiho, M. ; Halonen, K.A.I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c415t-55fdd40cbb0e22fdd08662cd73e708a0e038b02c2a1103c5caf1fe84b4becd2f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Acceleration</topic><topic>Accelerometers</topic><topic>Algorithms</topic><topic>Application specific integrated circuits</topic><topic>Applied sciences</topic><topic>BiCMOS integrated circuits</topic><topic>Capacitive sensor interface circuit</topic><topic>Circuit properties</topic><topic>Circuits</topic><topic>Dielectric, amorphous and glass solid devices</topic><topic>Electric potential</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency conversion</topic><topic>low-power circuit</topic><topic>Micro- and nanoelectromechanical devices (mems/nems)</topic><topic>microelectromechanical system (MEMS)</topic><topic>Oscillators, resonators, synthetizers</topic><topic>Power dissipation</topic><topic>Sampling</topic><topic>Sampling methods</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Signal convertors</topic><topic>Signal sampling</topic><topic>switched-capacitor circuit</topic><topic>Temperature sensors</topic><topic>three-axis accelerometer</topic><topic>time multiplexing</topic><topic>Voltage</topic><topic>Yttrium</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Paavola, M.</creatorcontrib><creatorcontrib>Kamarainen, M.</creatorcontrib><creatorcontrib>Jarvinen, J.A.M.</creatorcontrib><creatorcontrib>Saukoski, M.</creatorcontrib><creatorcontrib>Laiho, M.</creatorcontrib><creatorcontrib>Halonen, K.A.I.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Paavola, M.</au><au>Kamarainen, M.</au><au>Jarvinen, J.A.M.</au><au>Saukoski, M.</au><au>Laiho, M.</au><au>Halonen, K.A.I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Micropower Interface ASIC for a Capacitive 3-Axis Micro-Accelerometer</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2007-12-01</date><risdate>2007</risdate><volume>42</volume><issue>12</issue><spage>2651</spage><epage>2665</epage><pages>2651-2665</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>In this paper, a micropower interface IC for a capacitive 3-axis micro-accelerometer implemented in a 0.13- BiCMOS process is presented. The sensor interface consists of a front-end that converts the acceleration signal to voltage, two algorithmic ADCs, two frequency references, and a voltage, current, and temperature reference circuit. Die area and power dissipation are reduced by using time-multiplexed sampling and varying duty cycles down to 0.3%. The chip with a 0.51 active area draws 62 from a 1.8 V supply while sampling temperature at 100 Hz, and four proof masses, each at 1.04 kHz. With a 4-g capacitive 3-axis accelerometer, the measured noise floors in the x-, y-, and z-directions are 482 , 639 , and 662 , respectively.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.2007.908764</doi><tpages>15</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Acceleration Accelerometers Algorithms Application specific integrated circuits Applied sciences BiCMOS integrated circuits Capacitive sensor interface circuit Circuit properties Circuits Dielectric, amorphous and glass solid devices Electric potential Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Frequency conversion low-power circuit Micro- and nanoelectromechanical devices (mems/nems) microelectromechanical system (MEMS) Oscillators, resonators, synthetizers Power dissipation Sampling Sampling methods Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors Signal sampling switched-capacitor circuit Temperature sensors three-axis accelerometer time multiplexing Voltage Yttrium |
| title | A Micropower Interface ASIC for a Capacitive 3-Axis Micro-Accelerometer |
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