Wide-band CMOS low-noise amplifier exploiting thermal noise canceling
Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contra...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2004-02, Vol.39 (2), p.275-282 |
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creator | Bruccoleri, F. Klumperink, E.A.M. Nauta, B. |
description | Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching device. This allows for designing wide-band impedance-matching amplifiers with NF well below 3 dB, without suffering from instability issues. An amplifier realized in 0.25-/spl mu/m standard CMOS shows NF values below 2.4 dB over more than one decade of bandwidth (i.e., 150-2000 MHz) and below 2 dB over more than two octaves (i.e., 250-1100 MHz). Furthermore, the total voltage gain is 13.7 dB, the -3-dB bandwidth is from 2 MHz to 1.6 GHz, the IIP2 is +12 dBm, and the IIP3 is 0 dBm. The LNA drains 14 mA from a 2.5-V supply and the die area is 0.3/spl times/0.25 mm/sup 2/. |
doi_str_mv | 10.1109/JSSC.2003.821786 |
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Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching device. This allows for designing wide-band impedance-matching amplifiers with NF well below 3 dB, without suffering from instability issues. An amplifier realized in 0.25-/spl mu/m standard CMOS shows NF values below 2.4 dB over more than one decade of bandwidth (i.e., 150-2000 MHz) and below 2 dB over more than two octaves (i.e., 250-1100 MHz). Furthermore, the total voltage gain is 13.7 dB, the -3-dB bandwidth is from 2 MHz to 1.6 GHz, the IIP2 is +12 dBm, and the IIP3 is 0 dBm. 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(IEEE) 2004</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c459t-b344e002c009f683e01ada1264cdb7800f238541665e4ee79efc0df4e7457b633</citedby><cites>FETCH-LOGICAL-c459t-b344e002c009f683e01ada1264cdb7800f238541665e4ee79efc0df4e7457b633</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1263653$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1263653$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Bruccoleri, F.</creatorcontrib><creatorcontrib>Klumperink, E.A.M.</creatorcontrib><creatorcontrib>Nauta, B.</creatorcontrib><title>Wide-band CMOS low-noise amplifier exploiting thermal noise canceling</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching device. This allows for designing wide-band impedance-matching amplifiers with NF well below 3 dB, without suffering from instability issues. An amplifier realized in 0.25-/spl mu/m standard CMOS shows NF values below 2.4 dB over more than one decade of bandwidth (i.e., 150-2000 MHz) and below 2 dB over more than two octaves (i.e., 250-1100 MHz). Furthermore, the total voltage gain is 13.7 dB, the -3-dB bandwidth is from 2 MHz to 1.6 GHz, the IIP2 is +12 dBm, and the IIP3 is 0 dBm. The LNA drains 14 mA from a 2.5-V supply and the die area is 0.3/spl times/0.25 mm/sup 2/.</description><subject>Amplifiers</subject><subject>Bandwidth</subject><subject>Broadband amplifiers</subject><subject>CMOS</subject><subject>Gain</subject><subject>Impedance matching</subject><subject>Instability</subject><subject>Low-noise amplifiers</subject><subject>Negative feedback</subject><subject>Noise</subject><subject>Noise cancellation</subject><subject>Noise figure</subject><subject>Noise levels</subject><subject>Noise measurement</subject><subject>Stability</subject><subject>Voltage</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kMtLxDAQxoMouK7eBS_Fg566Th5N06OU9YWyh1X0FtJ2qln6Mumi_ve2VBA8eBpm5vfN4yPkmMKCUkgu7tbrdMEA-EIxGiu5Q2Y0ilRIY_6yS2YAVIXJ0N8nB95vhlQIRWdk-WwLDDPTFEH6sFoHVfsRNq31GJi6q2xp0QX42VWt7W3zGvRv6GpTBROSmybHaqgfkr3SVB6PfuKcPF0tH9Ob8H51fZte3oe5iJI-zLgQCMBygKSUiiNQUxjKpMiLLFYAJeMqElTKCAVinGCZQ1EKjEUUZ5LzOTmf5naufd-i73Vt_XBCZRpst16rRDIuGIWBPPuXZCpmEAs1gKd_wE27dc3whU4Y5ZHgbNwLE5S71nuHpe6crY370hT0aL8e7dej_Xqyf5CcTBKLiL84k1xGnH8DQ3t_GA</recordid><startdate>20040201</startdate><enddate>20040201</enddate><creator>Bruccoleri, F.</creator><creator>Klumperink, E.A.M.</creator><creator>Nauta, B.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching device. This allows for designing wide-band impedance-matching amplifiers with NF well below 3 dB, without suffering from instability issues. An amplifier realized in 0.25-/spl mu/m standard CMOS shows NF values below 2.4 dB over more than one decade of bandwidth (i.e., 150-2000 MHz) and below 2 dB over more than two octaves (i.e., 250-1100 MHz). Furthermore, the total voltage gain is 13.7 dB, the -3-dB bandwidth is from 2 MHz to 1.6 GHz, the IIP2 is +12 dBm, and the IIP3 is 0 dBm. The LNA drains 14 mA from a 2.5-V supply and the die area is 0.3/spl times/0.25 mm/sup 2/.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSSC.2003.821786</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Amplifiers Bandwidth Broadband amplifiers CMOS Gain Impedance matching Instability Low-noise amplifiers Negative feedback Noise Noise cancellation Noise figure Noise levels Noise measurement Stability Voltage |
title | Wide-band CMOS low-noise amplifier exploiting thermal noise canceling |
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