40-GHz transimpedance amplifier with differential outputs using InP-InGaAs heterojunction bipolar transistors

High-gain and high-bandwidth transimpedance amplifiers (TIAs) are required for fiber-optic receiver modules. This paper reports on the design, fabrication, and characterization of a 40-Gb/s TIA for SONET/SDH STS-768/STM-256 applications based on an InP-InGaAs single heterojunction bipolar transistor...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE journal of solid-state circuits 2003-09, Vol.38 (9), p.1518-1523
Hauptverfasser:	Wu, C.Q., Sovero, E.A., Massey, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Bandwidth Circuits Differential amplifiers Fiber optics Heterojunction bipolar transistors Indium phosphide Optical amplifiers Optical fiber communication Optical fibers Optical receivers Photodetectors Semiconductor devices Semiconductors Silicon germanium Space shuttles
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	High-gain and high-bandwidth transimpedance amplifiers (TIAs) are required for fiber-optic receiver modules. This paper reports on the design, fabrication, and characterization of a 40-Gb/s TIA for SONET/SDH STS-768/STM-256 applications based on an InP-InGaAs single heterojunction bipolar transistor (SHBT) process developed at Vitesse Semiconductor Corporation (Vitesse Indium Phosphide Release 1 or VIP-1). This amplifier consists of a single-ended input transimpedance pre-amplifier and a differential output post-amplifier. The measured differential transimpedance is 1800 /spl Omega/ with -3-dB bandwidth greater than 40 GHz. The high gain of this circuit eliminates the need for a standalone limiting amplifier between the conventional transimpedance pre-amplifier and the demultiplexer in short-reach applications.
ISSN:	0018-9200 1558-173X
DOI:	10.1109/JSSC.2003.815927