Tuning of Gate Electrostatics to Amplify Mercury Sensing Performance of Functionalized Field Effect Transistor
According to the World Health Organization (WHO), mercury is one of the top ten toxic groups of substances that can pose the greatest threat to human life. Very minor contamination with mercury can adversely impact the nervous, digestive, and immune systems of the lungs, kidneys, skin, and eyes, res...
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description | According to the World Health Organization (WHO), mercury is one of the top ten toxic groups of substances that can pose the greatest threat to human life. Very minor contamination with mercury can adversely impact the nervous, digestive, and immune systems of the lungs, kidneys, skin, and eyes, resulting in severe health problems, including death. Conventional detection techniques are incredibly complex, costly, and lack portability. This article describes a highly sensitive, selective, and stable field effect transistor (FET)-based sensor for efficiently detecting mercury ions in water. Glutathione-reduced graphene oxide (glu-rGO) is chosen as the sensing material. The operating gate voltage of the device is optimized to -4.98 V to achieve maximum response. At a gate voltage of -4.98 V, the device's sensitivity is evaluated as 1.04~\mu A/ppb for 1.2 ppb mercury compared to 0.51~\mu A/ppb at zero gate voltage. The device is tested against six common heavy metal ions and is found to be highly selective toward mercury. Therefore, the glu-rGO-based FET device is promising for future portable, economical, and user-friendly mercury ion detector systems. |
doi_str_mv | 10.1109/JSEN.2024.3438377 |
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Very minor contamination with mercury can adversely impact the nervous, digestive, and immune systems of the lungs, kidneys, skin, and eyes, resulting in severe health problems, including death. Conventional detection techniques are incredibly complex, costly, and lack portability. This article describes a highly sensitive, selective, and stable field effect transistor (FET)-based sensor for efficiently detecting mercury ions in water. Glutathione-reduced graphene oxide (glu-rGO) is chosen as the sensing material. The operating gate voltage of the device is optimized to -4.98 V to achieve maximum response. At a gate voltage of -4.98 V, the device's sensitivity is evaluated as <inline-formula> <tex-math notation="LaTeX">1.04~\mu </tex-math></inline-formula> A/ppb for 1.2 ppb mercury compared to <inline-formula> <tex-math notation="LaTeX">0.51~\mu </tex-math></inline-formula> A/ppb at zero gate voltage. The device is tested against six common heavy metal ions and is found to be highly selective toward mercury. Therefore, the glu-rGO-based FET device is promising for future portable, economical, and user-friendly mercury ion detector systems.]]></description><identifier>ISSN: 1530-437X</identifier><identifier>EISSN: 1558-1748</identifier><identifier>DOI: 10.1109/JSEN.2024.3438377</identifier><identifier>CODEN: ISJEAZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Graphene ; Ions ; Logic gates ; Mercury (metals) ; Mercury sensor ; Metals ; parts per billion (ppb) level detection ; reduced graphene oxide-field effect transistor (RGO-FET) ; selective ; sensitive ; Sensitivity ; Sensors</subject><ispartof>IEEE sensors journal, 2024-10, Vol.24 (19), p.29619-29626</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c148t-5bbff273044801fe5b5ec828b1af29beb819bcd07ab8fb7b267ace46ff15084f3</cites><orcidid>0009-0000-0061-6188 ; 0000-0001-8437-607X ; 0000-0002-7699-6436</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10643788$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10643788$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Nimisha</creatorcontrib><creatorcontrib>Sett, Avik</creatorcontrib><creatorcontrib>Tewari, Virendra Kumar</creatorcontrib><creatorcontrib>Bhattacharyya, Tarun Kanti</creatorcontrib><title>Tuning of Gate Electrostatics to Amplify Mercury Sensing Performance of Functionalized Field Effect Transistor</title><title>IEEE sensors journal</title><addtitle>JSEN</addtitle><description><![CDATA[According to the World Health Organization (WHO), mercury is one of the top ten toxic groups of substances that can pose the greatest threat to human life. Very minor contamination with mercury can adversely impact the nervous, digestive, and immune systems of the lungs, kidneys, skin, and eyes, resulting in severe health problems, including death. Conventional detection techniques are incredibly complex, costly, and lack portability. This article describes a highly sensitive, selective, and stable field effect transistor (FET)-based sensor for efficiently detecting mercury ions in water. Glutathione-reduced graphene oxide (glu-rGO) is chosen as the sensing material. The operating gate voltage of the device is optimized to -4.98 V to achieve maximum response. At a gate voltage of -4.98 V, the device's sensitivity is evaluated as <inline-formula> <tex-math notation="LaTeX">1.04~\mu </tex-math></inline-formula> A/ppb for 1.2 ppb mercury compared to <inline-formula> <tex-math notation="LaTeX">0.51~\mu </tex-math></inline-formula> A/ppb at zero gate voltage. The device is tested against six common heavy metal ions and is found to be highly selective toward mercury. Therefore, the glu-rGO-based FET device is promising for future portable, economical, and user-friendly mercury ion detector systems.]]></description><subject>Graphene</subject><subject>Ions</subject><subject>Logic gates</subject><subject>Mercury (metals)</subject><subject>Mercury sensor</subject><subject>Metals</subject><subject>parts per billion (ppb) level detection</subject><subject>reduced graphene oxide-field effect transistor (RGO-FET)</subject><subject>selective</subject><subject>sensitive</subject><subject>Sensitivity</subject><subject>Sensors</subject><issn>1530-437X</issn><issn>1558-1748</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkM1KAzEUhYMoWKsPILjIC0xNJpkmsyxlWpX6A63gbkjSeyUynSlJuqhP7wztwtU9i_sdOB8h95xNOGfl48u6epvkLJcTIYUWSl2QES8KnXEl9eWQBcukUF_X5CbGH8Z4qQo1Iu3m0Pr2m3ZIlyYBrRpwKXQxmeRdpKmjs92-8XikrxDcIRzpGto4EB8QsAs70zoY6MWhdcl3rWn8L2zpwkOzpRViX0c3wfRMTF24JVdomgh35zsmn4tqM3_KVu_L5_lslTkudcoKaxFzJZiUmnGEwhbgdK4tN5iXFqzmpXVbpozVaJXNp8o4kFNEXjAtUYwJP_W6fksMgPU--J0Jx5qzehBWD8LqQVh9FtYzDyfGA8C__2mvTWvxBw5QanI</recordid><startdate>20241001</startdate><enddate>20241001</enddate><creator>Nimisha</creator><creator>Sett, Avik</creator><creator>Tewari, Virendra Kumar</creator><creator>Bhattacharyya, Tarun Kanti</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0009-0000-0061-6188</orcidid><orcidid>https://orcid.org/0000-0001-8437-607X</orcidid><orcidid>https://orcid.org/0000-0002-7699-6436</orcidid></search><sort><creationdate>20241001</creationdate><title>Tuning of Gate Electrostatics to Amplify Mercury Sensing Performance of Functionalized Field Effect Transistor</title><author>Nimisha ; Sett, Avik ; Tewari, Virendra Kumar ; Bhattacharyya, Tarun Kanti</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c148t-5bbff273044801fe5b5ec828b1af29beb819bcd07ab8fb7b267ace46ff15084f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Graphene</topic><topic>Ions</topic><topic>Logic gates</topic><topic>Mercury (metals)</topic><topic>Mercury sensor</topic><topic>Metals</topic><topic>parts per billion (ppb) level detection</topic><topic>reduced graphene oxide-field effect transistor (RGO-FET)</topic><topic>selective</topic><topic>sensitive</topic><topic>Sensitivity</topic><topic>Sensors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nimisha</creatorcontrib><creatorcontrib>Sett, Avik</creatorcontrib><creatorcontrib>Tewari, Virendra Kumar</creatorcontrib><creatorcontrib>Bhattacharyya, Tarun Kanti</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE sensors journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nimisha</au><au>Sett, Avik</au><au>Tewari, Virendra Kumar</au><au>Bhattacharyya, Tarun Kanti</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tuning of Gate Electrostatics to Amplify Mercury Sensing Performance of Functionalized Field Effect Transistor</atitle><jtitle>IEEE sensors journal</jtitle><stitle>JSEN</stitle><date>2024-10-01</date><risdate>2024</risdate><volume>24</volume><issue>19</issue><spage>29619</spage><epage>29626</epage><pages>29619-29626</pages><issn>1530-437X</issn><eissn>1558-1748</eissn><coden>ISJEAZ</coden><abstract><![CDATA[According to the World Health Organization (WHO), mercury is one of the top ten toxic groups of substances that can pose the greatest threat to human life. Very minor contamination with mercury can adversely impact the nervous, digestive, and immune systems of the lungs, kidneys, skin, and eyes, resulting in severe health problems, including death. Conventional detection techniques are incredibly complex, costly, and lack portability. This article describes a highly sensitive, selective, and stable field effect transistor (FET)-based sensor for efficiently detecting mercury ions in water. Glutathione-reduced graphene oxide (glu-rGO) is chosen as the sensing material. The operating gate voltage of the device is optimized to -4.98 V to achieve maximum response. At a gate voltage of -4.98 V, the device's sensitivity is evaluated as <inline-formula> <tex-math notation="LaTeX">1.04~\mu </tex-math></inline-formula> A/ppb for 1.2 ppb mercury compared to <inline-formula> <tex-math notation="LaTeX">0.51~\mu </tex-math></inline-formula> A/ppb at zero gate voltage. The device is tested against six common heavy metal ions and is found to be highly selective toward mercury. Therefore, the glu-rGO-based FET device is promising for future portable, economical, and user-friendly mercury ion detector systems.]]></abstract><pub>IEEE</pub><doi>10.1109/JSEN.2024.3438377</doi><tpages>8</tpages><orcidid>https://orcid.org/0009-0000-0061-6188</orcidid><orcidid>https://orcid.org/0000-0001-8437-607X</orcidid><orcidid>https://orcid.org/0000-0002-7699-6436</orcidid></addata></record> |
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subjects | Graphene Ions Logic gates Mercury (metals) Mercury sensor Metals parts per billion (ppb) level detection reduced graphene oxide-field effect transistor (RGO-FET) selective sensitive Sensitivity Sensors |
title | Tuning of Gate Electrostatics to Amplify Mercury Sensing Performance of Functionalized Field Effect Transistor |
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