Solution-Processed Self-Driven Bulk-Heterojunction Photodetectors by Passivating With Polymers for Ultrasensitive Upconverters
As an optoelectronic device that integrates a display cell directly on a detecting cell, the upconverter can detect incident weak infrared light and convert it into visible light, and currently, it becomes the research focus. However, the existed upconverters still show low sensitivity. In this arti...
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| Veröffentlicht in: | IEEE sensors journal 2024-06, Vol.24 (12), p.19027-19032 |
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| creator | Ge, Zhenhua Yang, Shengyi Zhang, Zhenheng Xin, Haiyuan Zou, Guanzhen Cui, Yanyan Jiang, Yurong Zou, Bingsuo |
| description | As an optoelectronic device that integrates a display cell directly on a detecting cell, the upconverter can detect incident weak infrared light and convert it into visible light, and currently, it becomes the research focus. However, the existed upconverters still show low sensitivity. In this article, therefore, first lead sulfide (PbS) quantum dots (QDs), and poly(3-hexylthiophene) (P3HT) are blended in a suitable proportion as the hybrid active layer to fabricate self-driven bulk-heterojunction (BHJ) photodetector, and then, an organic light-emitting diode (OLED) is directly integrated onto it to form an upconverter. As a result, the upconverter ITO/ZnO/PbS:P3HT/TAPC/CBP:Ir(ppy)3/BCP/LiF/Al exhibits a high luminance of 18.8 cd/m2 under 1.9~\mu W/cm2 at 7 V, as well as a low turn-on voltage of 2.4 V under 1.637 mW/cm ^{{2}}~980 nm illumination. Furthermore, the underlain mechanism for the ultrasensitive upconverter is discussed, and we believe that the as-synthesized PbS:P3HT BHJ contributes to the efficient separation and transportion of the photogenerated carriers. |
| doi_str_mv | 10.1109/JSEN.2024.3394259 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_JSEN_2024_3394259</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10517882</ieee_id><sourcerecordid>3068176131</sourcerecordid><originalsourceid>FETCH-LOGICAL-c246t-997bbc6f88252dbd85257fc8f8fdfe0271dd348c58e8005d49f2885f726a3e6e3</originalsourceid><addsrcrecordid>eNpNkMtOwzAQRS0EEqXwAUgsLLFO8SOOnSWPQkEVRCoV7KLUGdOUNC62U6kbvp1E7YLVjGbuvTM6CF1SMqKUpDcvs_HriBEWjzhPYybSIzSgQqiIylgd9z0nUczl5yk6835FCE2lkAP0O7N1GyrbRJmzGryHEs-gNtGDq7bQ4Lu2_o4mEMDZVdvoXomzpQ227GY6WOfxYoezwvtqW4Sq-cIfVVjizNa7NXRLYx2e18EVHhpfhS4TzzfaNltwXaY_RyemqD1cHOoQzR_H7_eTaPr29Hx_O400i5MQpalcLHRilGKClYtSCSak0cooUxogTNKy5LHSQoEiRJRxaphSwkiWFBwS4EN0vc_dOPvTgg_5yrau6U7mnCSKyoRy2qnoXqWd9d6ByTeuWhdul1OS95jzHnPeY84PmDvP1d5TAcA_vaCy-5b_AQajfNs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3068176131</pqid></control><display><type>article</type><title>Solution-Processed Self-Driven Bulk-Heterojunction Photodetectors by Passivating With Polymers for Ultrasensitive Upconverters</title><source>IEEE Electronic Library (IEL)</source><creator>Ge, Zhenhua ; Yang, Shengyi ; Zhang, Zhenheng ; Xin, Haiyuan ; Zou, Guanzhen ; Cui, Yanyan ; Jiang, Yurong ; Zou, Bingsuo</creator><creatorcontrib>Ge, Zhenhua ; Yang, Shengyi ; Zhang, Zhenheng ; Xin, Haiyuan ; Zou, Guanzhen ; Cui, Yanyan ; Jiang, Yurong ; Zou, Bingsuo</creatorcontrib><description><![CDATA[As an optoelectronic device that integrates a display cell directly on a detecting cell, the upconverter can detect incident weak infrared light and convert it into visible light, and currently, it becomes the research focus. However, the existed upconverters still show low sensitivity. In this article, therefore, first lead sulfide (PbS) quantum dots (QDs), and poly(3-hexylthiophene) (P3HT) are blended in a suitable proportion as the hybrid active layer to fabricate self-driven bulk-heterojunction (BHJ) photodetector, and then, an organic light-emitting diode (OLED) is directly integrated onto it to form an upconverter. As a result, the upconverter ITO/ZnO/PbS:P3HT/TAPC/CBP:Ir(ppy)3/BCP/LiF/Al exhibits a high luminance of 18.8 cd/m2 under <inline-formula> <tex-math notation="LaTeX">1.9~\mu </tex-math></inline-formula>W/cm2 at 7 V, as well as a low turn-on voltage of 2.4 V under 1.637 mW/cm<inline-formula> <tex-math notation="LaTeX">^{{2}}~980 </tex-math></inline-formula> nm illumination. Furthermore, the underlain mechanism for the ultrasensitive upconverter is discussed, and we believe that the as-synthesized PbS:P3HT BHJ contributes to the efficient separation and transportion of the photogenerated carriers.]]></description><identifier>ISSN: 1530-437X</identifier><identifier>EISSN: 1558-1748</identifier><identifier>DOI: 10.1109/JSEN.2024.3394259</identifier><identifier>CODEN: ISJEAZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bulk heterostructures ; Display devices ; Heterojunctions ; Lead ; Lead sulfides ; Lighting ; Optoelectronic devices ; Organic light emitting diodes ; Performance evaluation ; Photoconductivity ; Photodetectors ; Photometers ; Quantum dots ; self-driven photodetectors ; Sensors ; ultrasensitive ; Up-converters ; upconverter ; Zinc oxide</subject><ispartof>IEEE sensors journal, 2024-06, Vol.24 (12), p.19027-19032</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c246t-997bbc6f88252dbd85257fc8f8fdfe0271dd348c58e8005d49f2885f726a3e6e3</cites><orcidid>0000-0001-5038-491X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10517882$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10517882$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ge, Zhenhua</creatorcontrib><creatorcontrib>Yang, Shengyi</creatorcontrib><creatorcontrib>Zhang, Zhenheng</creatorcontrib><creatorcontrib>Xin, Haiyuan</creatorcontrib><creatorcontrib>Zou, Guanzhen</creatorcontrib><creatorcontrib>Cui, Yanyan</creatorcontrib><creatorcontrib>Jiang, Yurong</creatorcontrib><creatorcontrib>Zou, Bingsuo</creatorcontrib><title>Solution-Processed Self-Driven Bulk-Heterojunction Photodetectors by Passivating With Polymers for Ultrasensitive Upconverters</title><title>IEEE sensors journal</title><addtitle>JSEN</addtitle><description><![CDATA[As an optoelectronic device that integrates a display cell directly on a detecting cell, the upconverter can detect incident weak infrared light and convert it into visible light, and currently, it becomes the research focus. However, the existed upconverters still show low sensitivity. In this article, therefore, first lead sulfide (PbS) quantum dots (QDs), and poly(3-hexylthiophene) (P3HT) are blended in a suitable proportion as the hybrid active layer to fabricate self-driven bulk-heterojunction (BHJ) photodetector, and then, an organic light-emitting diode (OLED) is directly integrated onto it to form an upconverter. As a result, the upconverter ITO/ZnO/PbS:P3HT/TAPC/CBP:Ir(ppy)3/BCP/LiF/Al exhibits a high luminance of 18.8 cd/m2 under <inline-formula> <tex-math notation="LaTeX">1.9~\mu </tex-math></inline-formula>W/cm2 at 7 V, as well as a low turn-on voltage of 2.4 V under 1.637 mW/cm<inline-formula> <tex-math notation="LaTeX">^{{2}}~980 </tex-math></inline-formula> nm illumination. Furthermore, the underlain mechanism for the ultrasensitive upconverter is discussed, and we believe that the as-synthesized PbS:P3HT BHJ contributes to the efficient separation and transportion of the photogenerated carriers.]]></description><subject>Bulk heterostructures</subject><subject>Display devices</subject><subject>Heterojunctions</subject><subject>Lead</subject><subject>Lead sulfides</subject><subject>Lighting</subject><subject>Optoelectronic devices</subject><subject>Organic light emitting diodes</subject><subject>Performance evaluation</subject><subject>Photoconductivity</subject><subject>Photodetectors</subject><subject>Photometers</subject><subject>Quantum dots</subject><subject>self-driven photodetectors</subject><subject>Sensors</subject><subject>ultrasensitive</subject><subject>Up-converters</subject><subject>upconverter</subject><subject>Zinc oxide</subject><issn>1530-437X</issn><issn>1558-1748</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkMtOwzAQRS0EEqXwAUgsLLFO8SOOnSWPQkEVRCoV7KLUGdOUNC62U6kbvp1E7YLVjGbuvTM6CF1SMqKUpDcvs_HriBEWjzhPYybSIzSgQqiIylgd9z0nUczl5yk6835FCE2lkAP0O7N1GyrbRJmzGryHEs-gNtGDq7bQ4Lu2_o4mEMDZVdvoXomzpQ227GY6WOfxYoezwvtqW4Sq-cIfVVjizNa7NXRLYx2e18EVHhpfhS4TzzfaNltwXaY_RyemqD1cHOoQzR_H7_eTaPr29Hx_O400i5MQpalcLHRilGKClYtSCSak0cooUxogTNKy5LHSQoEiRJRxaphSwkiWFBwS4EN0vc_dOPvTgg_5yrau6U7mnCSKyoRy2qnoXqWd9d6ByTeuWhdul1OS95jzHnPeY84PmDvP1d5TAcA_vaCy-5b_AQajfNs</recordid><startdate>20240615</startdate><enddate>20240615</enddate><creator>Ge, Zhenhua</creator><creator>Yang, Shengyi</creator><creator>Zhang, Zhenheng</creator><creator>Xin, Haiyuan</creator><creator>Zou, Guanzhen</creator><creator>Cui, Yanyan</creator><creator>Jiang, Yurong</creator><creator>Zou, Bingsuo</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5038-491X</orcidid></search><sort><creationdate>20240615</creationdate><title>Solution-Processed Self-Driven Bulk-Heterojunction Photodetectors by Passivating With Polymers for Ultrasensitive Upconverters</title><author>Ge, Zhenhua ; Yang, Shengyi ; Zhang, Zhenheng ; Xin, Haiyuan ; Zou, Guanzhen ; Cui, Yanyan ; Jiang, Yurong ; Zou, Bingsuo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c246t-997bbc6f88252dbd85257fc8f8fdfe0271dd348c58e8005d49f2885f726a3e6e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Bulk heterostructures</topic><topic>Display devices</topic><topic>Heterojunctions</topic><topic>Lead</topic><topic>Lead sulfides</topic><topic>Lighting</topic><topic>Optoelectronic devices</topic><topic>Organic light emitting diodes</topic><topic>Performance evaluation</topic><topic>Photoconductivity</topic><topic>Photodetectors</topic><topic>Photometers</topic><topic>Quantum dots</topic><topic>self-driven photodetectors</topic><topic>Sensors</topic><topic>ultrasensitive</topic><topic>Up-converters</topic><topic>upconverter</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ge, Zhenhua</creatorcontrib><creatorcontrib>Yang, Shengyi</creatorcontrib><creatorcontrib>Zhang, Zhenheng</creatorcontrib><creatorcontrib>Xin, Haiyuan</creatorcontrib><creatorcontrib>Zou, Guanzhen</creatorcontrib><creatorcontrib>Cui, Yanyan</creatorcontrib><creatorcontrib>Jiang, Yurong</creatorcontrib><creatorcontrib>Zou, Bingsuo</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE sensors journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ge, Zhenhua</au><au>Yang, Shengyi</au><au>Zhang, Zhenheng</au><au>Xin, Haiyuan</au><au>Zou, Guanzhen</au><au>Cui, Yanyan</au><au>Jiang, Yurong</au><au>Zou, Bingsuo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Solution-Processed Self-Driven Bulk-Heterojunction Photodetectors by Passivating With Polymers for Ultrasensitive Upconverters</atitle><jtitle>IEEE sensors journal</jtitle><stitle>JSEN</stitle><date>2024-06-15</date><risdate>2024</risdate><volume>24</volume><issue>12</issue><spage>19027</spage><epage>19032</epage><pages>19027-19032</pages><issn>1530-437X</issn><eissn>1558-1748</eissn><coden>ISJEAZ</coden><abstract><![CDATA[As an optoelectronic device that integrates a display cell directly on a detecting cell, the upconverter can detect incident weak infrared light and convert it into visible light, and currently, it becomes the research focus. However, the existed upconverters still show low sensitivity. In this article, therefore, first lead sulfide (PbS) quantum dots (QDs), and poly(3-hexylthiophene) (P3HT) are blended in a suitable proportion as the hybrid active layer to fabricate self-driven bulk-heterojunction (BHJ) photodetector, and then, an organic light-emitting diode (OLED) is directly integrated onto it to form an upconverter. As a result, the upconverter ITO/ZnO/PbS:P3HT/TAPC/CBP:Ir(ppy)3/BCP/LiF/Al exhibits a high luminance of 18.8 cd/m2 under <inline-formula> <tex-math notation="LaTeX">1.9~\mu </tex-math></inline-formula>W/cm2 at 7 V, as well as a low turn-on voltage of 2.4 V under 1.637 mW/cm<inline-formula> <tex-math notation="LaTeX">^{{2}}~980 </tex-math></inline-formula> nm illumination. Furthermore, the underlain mechanism for the ultrasensitive upconverter is discussed, and we believe that the as-synthesized PbS:P3HT BHJ contributes to the efficient separation and transportion of the photogenerated carriers.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSEN.2024.3394259</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-5038-491X</orcidid></addata></record> |
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| subjects | Bulk heterostructures Display devices Heterojunctions Lead Lead sulfides Lighting Optoelectronic devices Organic light emitting diodes Performance evaluation Photoconductivity Photodetectors Photometers Quantum dots self-driven photodetectors Sensors ultrasensitive Up-converters upconverter Zinc oxide |
| title | Solution-Processed Self-Driven Bulk-Heterojunction Photodetectors by Passivating With Polymers for Ultrasensitive Upconverters |
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