CMOS-Compatible Ultraviolet Photodetector Based on p-Nickel-Oxide/n-Indium -Gallium-Zinc-Oxide Heterojunction Diode
The detection of UVA rays (wavelength of 315 - 400 nm) is of great interest in technological applications and scientific research. Here, this work demonstrates a CMOS-compatible UVA photodetector based on p-nickel-oxide/n-indium-gallium-zinc-oxide heterojunction intended for on-chip UV detection and...
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| Veröffentlicht in: | IEEE sensors journal 2023-07, Vol.23 (14), p.1-1 |
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| creator | Li, Huimin Zhou, Xianda Wang, Kai |
| description | The detection of UVA rays (wavelength of 315 - 400 nm) is of great interest in technological applications and scientific research. Here, this work demonstrates a CMOS-compatible UVA photodetector based on p-nickel-oxide/n-indium-gallium-zinc-oxide heterojunction intended for on-chip UV detection and imaging. The UVA photodetector exhibits a dark current density of 0.7 nA/cm 2 at a reversed bias -4 V, a 68 % external peak quantum efficiency (EQE) at 340 nm, and a photoresponse time less than 7 ms. The photodetector also exhibits detectivity greater than 10 10 Jones and a good linear photoresponsivity. In addition, the photodetector demonstrates an excellent wavelength selectivity and UV/visible rejection ratio of 16.2, making it promising for CMOS-compatible UVA detection and imaging. |
| doi_str_mv | 10.1109/JSEN.2023.3278713 |
| format | Article |
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Here, this work demonstrates a CMOS-compatible UVA photodetector based on p-nickel-oxide/n-indium-gallium-zinc-oxide heterojunction intended for on-chip UV detection and imaging. The UVA photodetector exhibits a dark current density of 0.7 nA/cm 2 at a reversed bias -4 V, a 68 % external peak quantum efficiency (EQE) at 340 nm, and a photoresponse time less than 7 ms. The photodetector also exhibits detectivity greater than 10 10 Jones and a good linear photoresponsivity. 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(IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c294t-649ada688d790c09eaf21b2fcc4c7256d4a48457ec6bc476f8ca501ec4d96fac3</citedby><cites>FETCH-LOGICAL-c294t-649ada688d790c09eaf21b2fcc4c7256d4a48457ec6bc476f8ca501ec4d96fac3</cites><orcidid>0000-0003-2006-5760 ; 0000-0001-5205-0411</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10144515$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10144515$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Li, Huimin</creatorcontrib><creatorcontrib>Zhou, Xianda</creatorcontrib><creatorcontrib>Wang, Kai</creatorcontrib><title>CMOS-Compatible Ultraviolet Photodetector Based on p-Nickel-Oxide/n-Indium -Gallium-Zinc-Oxide Heterojunction Diode</title><title>IEEE sensors journal</title><addtitle>JSEN</addtitle><description>The detection of UVA rays (wavelength of 315 - 400 nm) is of great interest in technological applications and scientific research. Here, this work demonstrates a CMOS-compatible UVA photodetector based on p-nickel-oxide/n-indium-gallium-zinc-oxide heterojunction intended for on-chip UV detection and imaging. The UVA photodetector exhibits a dark current density of 0.7 nA/cm 2 at a reversed bias -4 V, a 68 % external peak quantum efficiency (EQE) at 340 nm, and a photoresponse time less than 7 ms. The photodetector also exhibits detectivity greater than 10 10 Jones and a good linear photoresponsivity. In addition, the photodetector demonstrates an excellent wavelength selectivity and UV/visible rejection ratio of 16.2, making it promising for CMOS-compatible UVA detection and imaging.</description><subject>CMOS</subject><subject>CMOS-compatible</subject><subject>Dark current</subject><subject>Gallium</subject><subject>Heterojunctions</subject><subject>Indium</subject><subject>Indium gallium zinc oxide</subject><subject>Metal oxides</subject><subject>Nickel</subject><subject>nikel-oxide</subject><subject>p-n heterojunctions</subject><subject>Photometers</subject><subject>Quantum efficiency</subject><subject>Silicon</subject><subject>Substrates</subject><subject>Thin film transistors</subject><subject>Transmission electron microscopy</subject><subject>Ultraviolet detectors</subject><subject>UV photodetector</subject><subject>Voltage</subject><subject>Zinc</subject><subject>Zinc oxide</subject><issn>1530-437X</issn><issn>1558-1748</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkNFKwzAUhoMoOKcPIHhR8DpbkqZNe6l1bpO5CXMg3pQsSTGza2aSir69Kd2FV-eH83_nwAfANUYjjFE-flpPliOCSDyKCcsYjk_AACdJBjGj2WmXYwRpzN7OwYVzO4RwzhI2AK54Xq1hYfYH7vW2VtGm9pZ_a1MrH718GG-k8kp4Y6N77pSMTBMd4FKLT1XD1Y-WatzAeSN1u4_glNd1CPBdN6JfRrNAW7NrG-F1QB90uHcJzipeO3V1nEOweZy8FjO4WE3nxd0CCpJTD1Oac8nTLJMsRwLlilcEb0klBBWMJKmknGY0YUqkW0FZWmWCJwgrQWWeVlzEQ3Db3z1Y89Uq58udaW0TXpYki4OjQJPQwn1LWOOcVVV5sHrP7W-JUdm5LTu3Zee2PLoNzE3PaKXUvz6mNAmm_wCAb3bQ</recordid><startdate>20230715</startdate><enddate>20230715</enddate><creator>Li, Huimin</creator><creator>Zhou, Xianda</creator><creator>Wang, Kai</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Here, this work demonstrates a CMOS-compatible UVA photodetector based on p-nickel-oxide/n-indium-gallium-zinc-oxide heterojunction intended for on-chip UV detection and imaging. The UVA photodetector exhibits a dark current density of 0.7 nA/cm 2 at a reversed bias -4 V, a 68 % external peak quantum efficiency (EQE) at 340 nm, and a photoresponse time less than 7 ms. The photodetector also exhibits detectivity greater than 10 10 Jones and a good linear photoresponsivity. In addition, the photodetector demonstrates an excellent wavelength selectivity and UV/visible rejection ratio of 16.2, making it promising for CMOS-compatible UVA detection and imaging.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSEN.2023.3278713</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0003-2006-5760</orcidid><orcidid>https://orcid.org/0000-0001-5205-0411</orcidid></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | CMOS CMOS-compatible Dark current Gallium Heterojunctions Indium Indium gallium zinc oxide Metal oxides Nickel nikel-oxide p-n heterojunctions Photometers Quantum efficiency Silicon Substrates Thin film transistors Transmission electron microscopy Ultraviolet detectors UV photodetector Voltage Zinc Zinc oxide |
| title | CMOS-Compatible Ultraviolet Photodetector Based on p-Nickel-Oxide/n-Indium -Gallium-Zinc-Oxide Heterojunction Diode |
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