Low-Voltage Gas Field Ionization Tunneling Sensor Using Silicon Nanostructures

In this paper, we report the design and characteristics of a field-ionization gas sensor based on freestanding silicon nano structures. Silicon nanostructures fabricated using a three-step chemical/electrochemical technique on silicon wafer were placed between two parallel plates separated by a smal...

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Veröffentlicht in:	IEEE sensors journal 2018-08, Vol.18 (15), p.6092-6096
Hauptverfasser:	Sohi, Parsoua Abedini, Kahrizi, Mojtaba
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric fields Gas detectors Gas ionization sensors Ionization low voltage breakdown Sensor phenomena and characterization Silicon silicon nanowires Tunneling tunneling breakdown tunneling current
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