Low-Voltage Gas Field Ionization Tunneling Sensor Using Silicon Nanostructures
In this paper, we report the design and characteristics of a field-ionization gas sensor based on freestanding silicon nano structures. Silicon nanostructures fabricated using a three-step chemical/electrochemical technique on silicon wafer were placed between two parallel plates separated by a smal...
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| Veröffentlicht in: | IEEE sensors journal 2018-08, Vol.18 (15), p.6092-6096 |
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| creator | Sohi, Parsoua Abedini Kahrizi, Mojtaba |
| description | In this paper, we report the design and characteristics of a field-ionization gas sensor based on freestanding silicon nano structures. Silicon nanostructures fabricated using a three-step chemical/electrochemical technique on silicon wafer were placed between two parallel plates separated by a small gap. The sensor works based on the field ionization tunneling effect. For the first time, it is shown that silicon nanostructures can be used for the purpose. The device was tested for Ar, N 2 , O 2 , and He gases in a pressure range of 0.01 |
| doi_str_mv | 10.1109/JSEN.2018.2846254 |
| format | Article |
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Detected breakdown voltages were much lower than those reported in the literature for gas ionization sensors based on metallic nanowires.</description><subject>Electric fields</subject><subject>Gas detectors</subject><subject>Gas ionization sensors</subject><subject>Ionization</subject><subject>low voltage breakdown</subject><subject>Sensor phenomena and characterization</subject><subject>Silicon</subject><subject>silicon nanowires</subject><subject>Tunneling</subject><subject>tunneling breakdown</subject><subject>tunneling current</subject><issn>1530-437X</issn><issn>1558-1748</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMFKAzEQhoMoWKsPIF72BbZOMslucpTSaqXUQ1vxtqSbbImsiSRbRJ_eXVu8zD_DzP8PfITcUphQCur-eT1bTRhQOWGSF0zwMzKiQsicllyeDz1CzrF8uyRXKb0DUFWKckRWy_CVv4a203ubPeqUzZ1tTbYI3v3ozgWfbQ7e29b5fba2PoWYbdPf4FpX9-uV9iF18VB3h2jTNblodJvszUnHZDufbaZP-fLlcTF9WOY1K0SXFxSZlJKVSlFhDDdGKRSsQdBc9xUlM43kRqGSBizuGLAGUO0AsLBS4ZjQY24dQ0rRNtVndB86flcUqgFINQCpBiDVCUjvuTt6nLX2_172vxgW-Avr41wd</recordid><startdate>20180801</startdate><enddate>20180801</enddate><creator>Sohi, Parsoua Abedini</creator><creator>Kahrizi, Mojtaba</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-7180-5389</orcidid><orcidid>https://orcid.org/0000-0001-7894-1087</orcidid></search><sort><creationdate>20180801</creationdate><title>Low-Voltage Gas Field Ionization Tunneling Sensor Using Silicon Nanostructures</title><author>Sohi, Parsoua Abedini ; Kahrizi, Mojtaba</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c265t-6132888279915dd4dd99352f30a4af30382df84d9398d0e3b202f039b0036e893</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Electric fields</topic><topic>Gas detectors</topic><topic>Gas ionization sensors</topic><topic>Ionization</topic><topic>low voltage breakdown</topic><topic>Sensor phenomena and characterization</topic><topic>Silicon</topic><topic>silicon nanowires</topic><topic>Tunneling</topic><topic>tunneling breakdown</topic><topic>tunneling current</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sohi, Parsoua Abedini</creatorcontrib><creatorcontrib>Kahrizi, Mojtaba</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) Online</collection><collection>IEL</collection><collection>CrossRef</collection><jtitle>IEEE sensors journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sohi, Parsoua Abedini</au><au>Kahrizi, Mojtaba</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-Voltage Gas Field Ionization Tunneling Sensor Using Silicon Nanostructures</atitle><jtitle>IEEE sensors journal</jtitle><stitle>JSEN</stitle><date>2018-08-01</date><risdate>2018</risdate><volume>18</volume><issue>15</issue><spage>6092</spage><epage>6096</epage><pages>6092-6096</pages><issn>1530-437X</issn><eissn>1558-1748</eissn><coden>ISJEAZ</coden><abstract>In this paper, we report the design and characteristics of a field-ionization gas sensor based on freestanding silicon nano structures. 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| source | IEL |
| subjects | Electric fields Gas detectors Gas ionization sensors Ionization low voltage breakdown Sensor phenomena and characterization Silicon silicon nanowires Tunneling tunneling breakdown tunneling current |
| title | Low-Voltage Gas Field Ionization Tunneling Sensor Using Silicon Nanostructures |
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