Design of Low-Noise High-Gain CMOS Transimpedance Amplifier for Intelligent Sensing of Secondary Electrons
This paper presents a transimpedance amplifier (TIA) which was optimized for detecting very weak signals generated for microscopy imaging in the scanning electron microscope (SEM). This high-performance TIA was designed using a nomograph approach. The TIA was constructed and fabricated in an Austria...
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| Veröffentlicht in: | IEEE sensors journal 2015-10, Vol.15 (10), p.5997-6004 |
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| creator | Joon Huang Chuah Holburn, David |
| description | This paper presents a transimpedance amplifier (TIA) which was optimized for detecting very weak signals generated for microscopy imaging in the scanning electron microscope (SEM). This high-performance TIA was designed using a nomograph approach. The TIA was constructed and fabricated in an Austriamicrosystems 0.35-μm CMOS technology. The circuit, connected to an integrated photodiode with a junction capacitance of 10 pF, exhibited a transimpedance gain of 107.3 dBQ, a bandwidth of 12.5 MHz, an input-referred noise of 3.54 × 10 -12 A/√Hz, and an SNR of 8, which manifested that the design is suitable for integration into a multipixel CMOS photon detector to perform intelligent sensing of secondary electrons in the SEM. |
| doi_str_mv | 10.1109/JSEN.2015.2452934 |
| format | Article |
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This high-performance TIA was designed using a nomograph approach. The TIA was constructed and fabricated in an Austriamicrosystems 0.35-μm CMOS technology. The circuit, connected to an integrated photodiode with a junction capacitance of 10 pF, exhibited a transimpedance gain of 107.3 dBQ, a bandwidth of 12.5 MHz, an input-referred noise of 3.54 × 10 -12 A/√Hz, and an SNR of 8, which manifested that the design is suitable for integration into a multipixel CMOS photon detector to perform intelligent sensing of secondary electrons in the SEM.</description><identifier>ISSN: 1530-437X</identifier><identifier>EISSN: 1558-1748</identifier><identifier>DOI: 10.1109/JSEN.2015.2452934</identifier><identifier>CODEN: ISJEAZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bandwidth ; Capacitance ; CMOS ; CMOS integrated circuits ; high-gain ; Low-noise ; Noise ; noise minimisation ; nomograph ; optimization ; Photodiodes ; scanning electron microscope ; secondary electron sensing ; transimpedance amplifier ; Transistors</subject><ispartof>IEEE sensors journal, 2015-10, Vol.15 (10), p.5997-6004</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c265t-d9b06ab1f5bfaf0e8471fccf9cd186c665e552ecc0fa4d9aa352adbc5279e5dc3</citedby><cites>FETCH-LOGICAL-c265t-d9b06ab1f5bfaf0e8471fccf9cd186c665e552ecc0fa4d9aa352adbc5279e5dc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7150326$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7150326$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Joon Huang Chuah</creatorcontrib><creatorcontrib>Holburn, David</creatorcontrib><title>Design of Low-Noise High-Gain CMOS Transimpedance Amplifier for Intelligent Sensing of Secondary Electrons</title><title>IEEE sensors journal</title><addtitle>JSEN</addtitle><description>This paper presents a transimpedance amplifier (TIA) which was optimized for detecting very weak signals generated for microscopy imaging in the scanning electron microscope (SEM). This high-performance TIA was designed using a nomograph approach. The TIA was constructed and fabricated in an Austriamicrosystems 0.35-μm CMOS technology. The circuit, connected to an integrated photodiode with a junction capacitance of 10 pF, exhibited a transimpedance gain of 107.3 dBQ, a bandwidth of 12.5 MHz, an input-referred noise of 3.54 × 10 -12 A/√Hz, and an SNR of 8, which manifested that the design is suitable for integration into a multipixel CMOS photon detector to perform intelligent sensing of secondary electrons in the SEM.</description><subject>Bandwidth</subject><subject>Capacitance</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>high-gain</subject><subject>Low-noise</subject><subject>Noise</subject><subject>noise minimisation</subject><subject>nomograph</subject><subject>optimization</subject><subject>Photodiodes</subject><subject>scanning electron microscope</subject><subject>secondary electron sensing</subject><subject>transimpedance amplifier</subject><subject>Transistors</subject><issn>1530-437X</issn><issn>1558-1748</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kN1OwjAcxRujiYg-gPGmL1Dsx7pulwQRMAgXw8S7pev-nSWjI-0S49vDAvHqnItzTk5-CD0zOmGM5q8fxXwz4ZTJCU8kz0Vyg0ZMyowwlWS3gxeUJEJ936OHGPeUslxJNUL7N4iu8bizeN39kk3nIuCla37IQjuPZ5_bAu-C9tEdjlBrbwBPD8fWWQcB2y7gle-hbV0DvscFnHO-GcYKMJ2vdfjD8xZMHzofH9Gd1W2Ep6uO0df7fDdbkvV2sZpN18TwVPakziua6opZWVltKWSJYtYYm5uaZalJUwlScjCGWp3UudZCcl1XRnKVg6yNGCN22TWhizGALY_BHc5XSkbLAVY5wCoHWOUV1rnzcuk4APjPKyap4Kk4Adu5aEU</recordid><startdate>201510</startdate><enddate>201510</enddate><creator>Joon Huang Chuah</creator><creator>Holburn, David</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201510</creationdate><title>Design of Low-Noise High-Gain CMOS Transimpedance Amplifier for Intelligent Sensing of Secondary Electrons</title><author>Joon Huang Chuah ; Holburn, David</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c265t-d9b06ab1f5bfaf0e8471fccf9cd186c665e552ecc0fa4d9aa352adbc5279e5dc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Bandwidth</topic><topic>Capacitance</topic><topic>CMOS</topic><topic>CMOS integrated circuits</topic><topic>high-gain</topic><topic>Low-noise</topic><topic>Noise</topic><topic>noise minimisation</topic><topic>nomograph</topic><topic>optimization</topic><topic>Photodiodes</topic><topic>scanning electron microscope</topic><topic>secondary electron sensing</topic><topic>transimpedance amplifier</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Joon Huang Chuah</creatorcontrib><creatorcontrib>Holburn, David</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE sensors journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Joon Huang Chuah</au><au>Holburn, David</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design of Low-Noise High-Gain CMOS Transimpedance Amplifier for Intelligent Sensing of Secondary Electrons</atitle><jtitle>IEEE sensors journal</jtitle><stitle>JSEN</stitle><date>2015-10</date><risdate>2015</risdate><volume>15</volume><issue>10</issue><spage>5997</spage><epage>6004</epage><pages>5997-6004</pages><issn>1530-437X</issn><eissn>1558-1748</eissn><coden>ISJEAZ</coden><abstract>This paper presents a transimpedance amplifier (TIA) which was optimized for detecting very weak signals generated for microscopy imaging in the scanning electron microscope (SEM). This high-performance TIA was designed using a nomograph approach. The TIA was constructed and fabricated in an Austriamicrosystems 0.35-μm CMOS technology. The circuit, connected to an integrated photodiode with a junction capacitance of 10 pF, exhibited a transimpedance gain of 107.3 dBQ, a bandwidth of 12.5 MHz, an input-referred noise of 3.54 × 10 -12 A/√Hz, and an SNR of 8, which manifested that the design is suitable for integration into a multipixel CMOS photon detector to perform intelligent sensing of secondary electrons in the SEM.</abstract><pub>IEEE</pub><doi>10.1109/JSEN.2015.2452934</doi><tpages>8</tpages></addata></record> |
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| subjects | Bandwidth Capacitance CMOS CMOS integrated circuits high-gain Low-noise Noise noise minimisation nomograph optimization Photodiodes scanning electron microscope secondary electron sensing transimpedance amplifier Transistors |
| title | Design of Low-Noise High-Gain CMOS Transimpedance Amplifier for Intelligent Sensing of Secondary Electrons |
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