GaN on Silicon Substrate With Various SiC Buffer Layer for UV Detecting Applications
Metal organic chemical vapor deposited Gallium nitride (GaN) thin films on (111) n-Si substrate with polycrystalline β-SiC (poly-SiC), cubic β-SiC (c-SiC), and porous β-SiC (PSC) buffer layers were characterized in detail using X-ray diffraction, Fourier transform IR spectroscopy, atomic force micro...
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| Veröffentlicht in: | IEEE sensors journal 2010-08, Vol.10 (8), p.1291-1296 |
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| creator | Chiang, Yen-Ting Fang, Yean-Kuen Chou, Tse-Heng Juang, Feng-Renn Hsu, Kai-Chun Wei, Tzu-Chieh Lin, Cheng-I Chen, Chii-Wen Liang, Chi-Ying |
| description | Metal organic chemical vapor deposited Gallium nitride (GaN) thin films on (111) n-Si substrate with polycrystalline β-SiC (poly-SiC), cubic β-SiC (c-SiC), and porous β-SiC (PSC) buffer layers were characterized in detail using X-ray diffraction, Fourier transform IR spectroscopy, atomic force microscope, TEM, SEM, and Raman spectrometer. The β-SiC thin film was prepared by rapid thermal chemical vapor deposition, while the PSC thin film was formed by using the electrochemical anodization on a cubic β-SiC thin film. In addition, we used the GaN thin film on different buffer layers to construct a metal-semiconductor-metal (MSM) photodiode and measured its photo/dark current ratio (PDCR) and responsivity with and without the irradiance of an UV light source for examining the ultraviolet detecting properties. Among these MSM photodiodes, the structure of GaN/PSC/n-Si achieved the highest PDCR and responsivity of 6.75 × 10 5 and 138 mA/W, respectively, for the lowest stress built in the GaN film. |
| doi_str_mv | 10.1109/JSEN.2009.2037310 |
| format | Article |
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The β-SiC thin film was prepared by rapid thermal chemical vapor deposition, while the PSC thin film was formed by using the electrochemical anodization on a cubic β-SiC thin film. In addition, we used the GaN thin film on different buffer layers to construct a metal-semiconductor-metal (MSM) photodiode and measured its photo/dark current ratio (PDCR) and responsivity with and without the irradiance of an UV light source for examining the ultraviolet detecting properties. Among these MSM photodiodes, the structure of GaN/PSC/n-Si achieved the highest PDCR and responsivity of 6.75 × 10 5 and 138 mA/W, respectively, for the lowest stress built in the GaN film.</description><identifier>ISSN: 1530-437X</identifier><identifier>EISSN: 1558-1748</identifier><identifier>DOI: 10.1109/JSEN.2009.2037310</identifier><identifier>CODEN: ISJEAZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Anodizing ; Atomic force microscopy ; beta -SiC ; Buffer layers ; Chemical vapor deposition ; Fourier transforms ; Gallium nitride ; Gallium nitride (GaN) ; Gallium nitrides ; metal-semiconductor-metal (MSM) ; Organic chemicals ; Photodiodes ; porous ; Scanning electron microscopy ; Silicon carbide ; Solar energy ; Spectrometers ; Spectroscopy ; Sputtering ; Substrates ; Thin films ; ultraviolet detector</subject><ispartof>IEEE sensors journal, 2010-08, Vol.10 (8), p.1291-1296</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Aug 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-80a2aa94184b99c5023c399a8f98ec7aa8db89be3f074d07ead351965441d5973</citedby><cites>FETCH-LOGICAL-c325t-80a2aa94184b99c5023c399a8f98ec7aa8db89be3f074d07ead351965441d5973</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5471707$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5471707$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chiang, Yen-Ting</creatorcontrib><creatorcontrib>Fang, Yean-Kuen</creatorcontrib><creatorcontrib>Chou, Tse-Heng</creatorcontrib><creatorcontrib>Juang, Feng-Renn</creatorcontrib><creatorcontrib>Hsu, Kai-Chun</creatorcontrib><creatorcontrib>Wei, Tzu-Chieh</creatorcontrib><creatorcontrib>Lin, Cheng-I</creatorcontrib><creatorcontrib>Chen, Chii-Wen</creatorcontrib><creatorcontrib>Liang, Chi-Ying</creatorcontrib><title>GaN on Silicon Substrate With Various SiC Buffer Layer for UV Detecting Applications</title><title>IEEE sensors journal</title><addtitle>JSEN</addtitle><description>Metal organic chemical vapor deposited Gallium nitride (GaN) thin films on (111) n-Si substrate with polycrystalline β-SiC (poly-SiC), cubic β-SiC (c-SiC), and porous β-SiC (PSC) buffer layers were characterized in detail using X-ray diffraction, Fourier transform IR spectroscopy, atomic force microscope, TEM, SEM, and Raman spectrometer. The β-SiC thin film was prepared by rapid thermal chemical vapor deposition, while the PSC thin film was formed by using the electrochemical anodization on a cubic β-SiC thin film. In addition, we used the GaN thin film on different buffer layers to construct a metal-semiconductor-metal (MSM) photodiode and measured its photo/dark current ratio (PDCR) and responsivity with and without the irradiance of an UV light source for examining the ultraviolet detecting properties. Among these MSM photodiodes, the structure of GaN/PSC/n-Si achieved the highest PDCR and responsivity of 6.75 × 10 5 and 138 mA/W, respectively, for the lowest stress built in the GaN film.</description><subject>Anodizing</subject><subject>Atomic force microscopy</subject><subject>beta -SiC</subject><subject>Buffer layers</subject><subject>Chemical vapor deposition</subject><subject>Fourier transforms</subject><subject>Gallium nitride</subject><subject>Gallium nitride (GaN)</subject><subject>Gallium nitrides</subject><subject>metal-semiconductor-metal (MSM)</subject><subject>Organic chemicals</subject><subject>Photodiodes</subject><subject>porous</subject><subject>Scanning electron microscopy</subject><subject>Silicon carbide</subject><subject>Solar energy</subject><subject>Spectrometers</subject><subject>Spectroscopy</subject><subject>Sputtering</subject><subject>Substrates</subject><subject>Thin films</subject><subject>ultraviolet detector</subject><issn>1530-437X</issn><issn>1558-1748</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkL1OwzAUhS0EEqXwAIjFEgNTih3bsT2WUgqoKkN_YIsc1wFXaRJsZ-jb46iIgeXcK93vHh0dAK4xGmGM5P3rcroYpQjJKIQTjE7AADMmEsypOO13ghJK-Mc5uPB-hxCWnPEBWM3UAjY1XNrK6n52hQ9OBQPfbfiCG-Vs0_l4nsCHriyNg3N1iFo2Dq438NEEo4OtP-G4baODCrap_SU4K1XlzdXvHIL103Q1eU7mb7OXyXieaJKykAikUqUkxYIWUmqGUqKJlEqUUhjNlRLbQsjCkBJxukXcqC1hWGaMUrxlkpMhuDv6tq757owP-d56bapK1SamzjkjPM1EJiJ5-4_cNZ2rY7gcI4EpRxlJI4WPlHaN986UeevsXrlDhPK-5ryvOe9rzn9rjj83xx9rjPnjGeWYI05-AM70dxk</recordid><startdate>20100801</startdate><enddate>20100801</enddate><creator>Chiang, Yen-Ting</creator><creator>Fang, Yean-Kuen</creator><creator>Chou, Tse-Heng</creator><creator>Juang, Feng-Renn</creator><creator>Hsu, Kai-Chun</creator><creator>Wei, Tzu-Chieh</creator><creator>Lin, Cheng-I</creator><creator>Chen, Chii-Wen</creator><creator>Liang, Chi-Ying</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The β-SiC thin film was prepared by rapid thermal chemical vapor deposition, while the PSC thin film was formed by using the electrochemical anodization on a cubic β-SiC thin film. In addition, we used the GaN thin film on different buffer layers to construct a metal-semiconductor-metal (MSM) photodiode and measured its photo/dark current ratio (PDCR) and responsivity with and without the irradiance of an UV light source for examining the ultraviolet detecting properties. Among these MSM photodiodes, the structure of GaN/PSC/n-Si achieved the highest PDCR and responsivity of 6.75 × 10 5 and 138 mA/W, respectively, for the lowest stress built in the GaN film.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSEN.2009.2037310</doi><tpages>6</tpages></addata></record> |
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| subjects | Anodizing Atomic force microscopy beta -SiC Buffer layers Chemical vapor deposition Fourier transforms Gallium nitride Gallium nitride (GaN) Gallium nitrides metal-semiconductor-metal (MSM) Organic chemicals Photodiodes porous Scanning electron microscopy Silicon carbide Solar energy Spectrometers Spectroscopy Sputtering Substrates Thin films ultraviolet detector |
| title | GaN on Silicon Substrate With Various SiC Buffer Layer for UV Detecting Applications |
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