Wavelength-Specific Ultraviolet Photodetectors Based on AlGaN Multiple Quantum Wells

The detection of a specific spectral line in ultraviolet in the presence of broadband ambient lighting is necessary for many applications. We report wavelength-selective photodetection using AlGaN multiple quantum wells grown by molecular beam epitaxy. A near-Gaussian photoresponse peak at 300 nm wi...

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Veröffentlicht in:	IEEE journal of quantum electronics 2016-03, Vol.52 (3), p.1-6
Hauptverfasser:	Pramanik, Pallabi, Sen, Sayantani, Singha, Chirantan, Roy, Abhra Shankar, Das, Alakananda, Sen, Susanta, Sridhara Rao, Duggi Venkata, Bhattacharyya, Anirban
Format:	Artikel
Sprache:	eng
Schlagworte:	Active control Aluminum gallium nitride Aluminum gallium nitrides Broadband Devices Indium Lighting Optoelectronic devices Photoconductivity Photodetectors Photoelectric effect Quantum well devices Quantum wells Semiconductor growth Ultraviolet Wide band gap semiconductors
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