Design and Analysis of 250-nm AlInN Laser Diodes on AlN Substrates Using Tapered Electron Blocking Layers

A theoretical investigation into the operation of AlInN ultraviolet laser (UV) diodes on AlN substrates is presented. 2-D optoelectronic simulation of a prototypical design predicts lasing at a target wavelength of 250 nm. Simulations indicate optical gain degradation attributable to a parasitic inv...

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Veröffentlicht in:	IEEE journal of quantum electronics 2012-05, Vol.48 (5), p.703-711
Hauptverfasser:	Satter, M. M., Hee-Jin Kim, Lochner, Z., Jae-Hyun Ryou, Shyh-Chiang Shen, Dupuis, R. D., Yoder, P. D.
Format:	Artikel
Sprache:	eng
Schlagworte:	AlInN active layer AlN substrate Aluminum gallium nitride Optical buffering Optical polarization Optical refraction Optical variables control Substrates tapered electron blocking layer (EBL) ultraviolet laser diodes
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