Design and Analysis of 250-nm AlInN Laser Diodes on AlN Substrates Using Tapered Electron Blocking Layers
A theoretical investigation into the operation of AlInN ultraviolet laser (UV) diodes on AlN substrates is presented. 2-D optoelectronic simulation of a prototypical design predicts lasing at a target wavelength of 250 nm. Simulations indicate optical gain degradation attributable to a parasitic inv...
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| Veröffentlicht in: | IEEE journal of quantum electronics 2012-05, Vol.48 (5), p.703-711 |
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| container_end_page | 711 |
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| container_title | IEEE journal of quantum electronics |
| container_volume | 48 |
| creator | Satter, M. M. Hee-Jin Kim Lochner, Z. Jae-Hyun Ryou Shyh-Chiang Shen Dupuis, R. D. Yoder, P. D. |
| description | A theoretical investigation into the operation of AlInN ultraviolet laser (UV) diodes on AlN substrates is presented. 2-D optoelectronic simulation of a prototypical design predicts lasing at a target wavelength of 250 nm. Simulations indicate optical gain degradation attributable to a parasitic inversion layer, which forms as a result of polarization charge associated with homogeneous electron blocking layers. Appreciable improvement in optical gain is demonstrated in designs featuring inhomogeneous electron blocking layers, by virtue of a volumetric redistribution of polarization charge. Numerical simulations inspire confidence in AlInN as a viable alternative to AlGaN technologies for UV laser-diode operation. |
| doi_str_mv | 10.1109/JQE.2012.2190496 |
| format | Article |
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Numerical simulations inspire confidence in AlInN as a viable alternative to AlGaN technologies for UV laser-diode operation.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/JQE.2012.2190496</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>IEEE</publisher><subject>AlInN active layer ; AlN substrate ; Aluminum gallium nitride ; Optical buffering ; Optical polarization ; Optical refraction ; Optical variables control ; Substrates ; tapered electron blocking layer (EBL) ; ultraviolet laser diodes</subject><ispartof>IEEE journal of quantum electronics, 2012-05, Vol.48 (5), p.703-711</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c263t-af6a9a3155d7e4373f34529875f588bca39048978727c0e87c9538530a3561073</citedby><cites>FETCH-LOGICAL-c263t-af6a9a3155d7e4373f34529875f588bca39048978727c0e87c9538530a3561073</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6166845$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6166845$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Satter, M. 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Appreciable improvement in optical gain is demonstrated in designs featuring inhomogeneous electron blocking layers, by virtue of a volumetric redistribution of polarization charge. Numerical simulations inspire confidence in AlInN as a viable alternative to AlGaN technologies for UV laser-diode operation.</description><subject>AlInN active layer</subject><subject>AlN substrate</subject><subject>Aluminum gallium nitride</subject><subject>Optical buffering</subject><subject>Optical polarization</subject><subject>Optical refraction</subject><subject>Optical variables control</subject><subject>Substrates</subject><subject>tapered electron blocking layer (EBL)</subject><subject>ultraviolet laser diodes</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1PAjEQhhujiYjeTbz0Dyz2Y_t1RETFbDBGOG9Kd5ZUly5p1wP_3hKIp8nM-76TmQehe0omlBLz-P45nzBC2YRRQ0ojL9CICqELqii_RCNCqC4MNeoa3aT0nduy1GSE_DMkvw3YhgZPg-0OySfct5gJUoQdnnaLsMSVTRDxs-8byGLI0yX--t2kIdohT9bJhy1e2T1EaPC8AzfE7HrqevdzVCp7gJhu0VVruwR35zpG65f5avZWVB-vi9m0KhyTfChsK62xPN_eKCi54i0vBTNaiVZovXGW5_e0UVox5Qho5YzgWnBiuZCUKD5G5LTXxT6lCG29j35n46GmpD6iqjOq-oiqPqPKkYdTxAPAv11SKXUp-B-442KW</recordid><startdate>20120501</startdate><enddate>20120501</enddate><creator>Satter, M. M.</creator><creator>Hee-Jin Kim</creator><creator>Lochner, Z.</creator><creator>Jae-Hyun Ryou</creator><creator>Shyh-Chiang Shen</creator><creator>Dupuis, R. D.</creator><creator>Yoder, P. D.</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120501</creationdate><title>Design and Analysis of 250-nm AlInN Laser Diodes on AlN Substrates Using Tapered Electron Blocking Layers</title><author>Satter, M. M. ; Hee-Jin Kim ; Lochner, Z. ; Jae-Hyun Ryou ; Shyh-Chiang Shen ; Dupuis, R. D. ; Yoder, P. 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D.</creatorcontrib><creatorcontrib>Yoder, P. D.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Satter, M. M.</au><au>Hee-Jin Kim</au><au>Lochner, Z.</au><au>Jae-Hyun Ryou</au><au>Shyh-Chiang Shen</au><au>Dupuis, R. D.</au><au>Yoder, P. D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design and Analysis of 250-nm AlInN Laser Diodes on AlN Substrates Using Tapered Electron Blocking Layers</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>2012-05-01</date><risdate>2012</risdate><volume>48</volume><issue>5</issue><spage>703</spage><epage>711</epage><pages>703-711</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>A theoretical investigation into the operation of AlInN ultraviolet laser (UV) diodes on AlN substrates is presented. 2-D optoelectronic simulation of a prototypical design predicts lasing at a target wavelength of 250 nm. Simulations indicate optical gain degradation attributable to a parasitic inversion layer, which forms as a result of polarization charge associated with homogeneous electron blocking layers. Appreciable improvement in optical gain is demonstrated in designs featuring inhomogeneous electron blocking layers, by virtue of a volumetric redistribution of polarization charge. Numerical simulations inspire confidence in AlInN as a viable alternative to AlGaN technologies for UV laser-diode operation.</abstract><pub>IEEE</pub><doi>10.1109/JQE.2012.2190496</doi><tpages>9</tpages></addata></record> |
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| subjects | AlInN active layer AlN substrate Aluminum gallium nitride Optical buffering Optical polarization Optical refraction Optical variables control Substrates tapered electron blocking layer (EBL) ultraviolet laser diodes |
| title | Design and Analysis of 250-nm AlInN Laser Diodes on AlN Substrates Using Tapered Electron Blocking Layers |
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